由於製程演進，元件尺寸縮小，為了在此條件下仍維持高良率，因此蝕刻製程是製程重要的一環。在實驗室，我們使用自己的電漿蝕刻機台模擬元件製作之蝕刻高介電係數材料的部分，並利用相位調變式橢圓儀進行線上即時量測，觀察其橢圓偏光參數及膜厚的變化。
在蝕刻高介電係數材料- HfO2的實驗過程中發現，除了調變ICP power、Bias power及腔體壓力會對蝕刻率造成影響外，改變蝕刻的氣體亦是有相當的影響，實驗中我們改以氯氣混合氮氣電漿進行蝕刻，將有助於提升HfO2的蝕刻率。並且在即時量測的過程中發現不同的氯氣混合氮氣比例，除了對於蝕刻率的影響不同外，在蝕刻過程中對於試片表面的破壞程度亦不同，因此造成測量的橢圓偏光參數受到影響。此外，由即時量測得到的橢圓偏光參數除了受到表面粗糙度影響外，也會受到試片表面型態的影響，因此利用橢圓儀測量所得的數具有較高的可信度。

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