本篇論文主軸為金屬-氧化物-金屬結構的先進元件，第一種為金屬-氧化物-金屬(MIM)電容，第二種則為電阻式記憶體。
在金氧金電容的部分，主要著重於降低電容元件的”二次電壓電容係數”，而二次電壓電容係數會隨著氧化物的介電常數增加而增高，因此目標在於如何能在提高電容密度的同時必須抑制元件的電容對施加電壓的非線性特性，在此使用的是非晶態的TiO2和Y2O3堆疊，由於Y元素在高溫下能夠有效地抑制TiO2的結晶，因此可以擁有高溫退火帶來的介電常數提高的好處但同時能抑制TiO2形成結晶態帶來過大的二次電壓電容係數，也就是藉著部份的電容密度來達到減少二次電壓電容係數。
由於電容密度與二次電壓電容係數呈現一個反比的關係，因此需要應用另一種金氧金電容當中不同氧化物的特性，稱作二次電壓電容係數的”抵消效應”。所謂的抵消效應是藉著堆疊兩種不同的氧化物，兩種氧化物各自擁有一正一負的二次電壓電容係數，因此堆疊起來之後整體的二次電壓電容係數會被正負抵消而呈現較低的二次電壓電容係數。同時為了想進一步地提高電容密度，於此使用了結晶態的TiO2，但同時會急遽地增加二次電壓電容係數，因此除了採用抵消效應之外，還多在結晶的TiO2表面使用了氮氣電漿處理來抑制二次電壓電容係數，並且堆疊擁有負的二次電壓電容係數的SiO2，在這部分我們使得二次電壓電容係數有效的抑制達30 ppm/V2，電容密度則為11.2 fF/μm2符合國際半導體藍圖組織2018年所必須達成的要求。但與一般的金屬氧化物SiO2的介電常數低了許多，因此再進一步地將SiO2更換為ZrTiOx，ZrTiOx與SiO2一樣有著負的二次電壓電容係數，但其介電常數則高達22.5，因此能夠藉著抵消效應達到理想的二次電壓電容係數外更能提高電容密度達14.38 fF/μm2和68 ppm/V2的二次電壓電容係數。
而在電阻式記憶體的主題中，主要在探討其中的金屬氧化物薄膜性質對整個電阻式記憶體的電性影響，在此以ZrTiOx為主角，討論ZrTiOx結晶與否對切換機制的影響；第二步則是討論非晶態ZrTiOx中若有介面氧化層(interfacial layer, IL)產生及IL位置對於電阻式記憶體的影響，分為無IL、下電極處有IL生成和上下電極都有IL存在對元件影響的比較與討論，在這一系列的實驗中得到非晶態的ZrTiOx展現了較好的均勻度、較低的切換電壓、較快的切換速度跟較好的判讀區間等等；而IL的位置在電阻式記憶體中影響著切換電壓大小的重要因素，因此IL可以是一個作為調變的因子來達到較快的速度和較低的功耗，在研究結果發現單側生成IL會有最佳的效果。除此之外，電阻式記憶體在高密度堆疊的應用上通常需要藉著額外的二極體達到整流效果和減少元件彼此間干擾導致的誤讀可能性，因此一個二極體加上一個電阻式記憶體的結構(1D1R)，才有可能達到最密堆積。在此研究中使用了一個電阻式記憶體及一個金屬-半導體接面而形成的蕭基二極體，為TaN/ZrTiOx/Ni/n+-Si結構，除了搭配前述IL研究的結果外，此結構的電阻式記憶體更容易的與現今製程技術匹配外，也能降低元件的製作成本。

This thesis focuses on the advanced devices based on the metal-insulator-metal (MIM) structure, the first one is MIM capacitor, and another one is resistive random access memory (RRAM).
The first part is MIM capacitor, our works revolve around how to suppress the quadratic voltage coefficient of capacitance, so called, VCC-α. However, VCC-α will become larger as the dielectric constant of oxide increases that brings out our main goal, how to increase the capacitance density but suppress VCC-α at the same time. In this part, we adopted amorphous TiO2 and Y2O3 stack as dielectric of MIM capacitor, the main reason is that yttrium has larger atom radius would let TiO2 maintain in amorphous phase. Hence, after annealed TiO2/Y2O3 shows higher capacitance density but TiO2 stays in amorphous state at the same time.
Due to capacitance density and VCC-α has an inverse relationship, so we need to utilize another way called “canceling effect” of VCC-α. Canceling effect is achieved by two different oxide films, one has positive VCC-α and another one has negative VCC-α. Compare to adopt only one oxide film, once stack these two oxide films the effective VCC-α will become smaller due to positive VCC-α and negative VCC-α compensates each other. Furthermore, by utilizing the crystalline TiO2 to get higher capacitance density, but the VCC-α will become larger rapidly at the same time. To reduce the VCC-α, nitrogen plasma treatment on the surface of crystalline TiO2 was adopted; moreover, to further suppress the VCC-α, SiO2 is stacked on the crystalline TiO2 because of SiO2 has negative VCC-α that can compensate the positive VCC-α introduced by crystalline TiO2. In this work, MIM capacitor shows 30 ppm/V2 of VCC-α, 11.2 fF/μm2 of capacitance density, these results fit the requirements of MIM capacitor in 2018 by ITRS. But compare to novel metal oxide, SiO2 has much lower dielectric constant (κ) value, so the next part is replacing SiO2 to ZrTiOx.
It is worth to mention that ZrTiOx demonstrates negative VCC-α characteristic like SiO2, but has much higher κ value, 22.5. Thus, the results of this work we got a much higher capacitance density of 14.38 fF/μm2 and 68 ppm/V2 of VCC-α.
In the RRAM topic, we spent lots of effort to discuss how the property of ZrTiOx affects the electrical characteristics of RRAM. First, we explored the influence of crystalline ZrTiOx compared to amorphous one. Second, we examined how the position of IL effects switching mechanism, based on this, we planned three experiments each has different IL position, one has no IL, another has an IL on the bottom electrode and the last one has IL on the both top and bottom electrode. In this series experiments, we found that amorphous ZrTiOx demonstrates better uniformity, lower switching voltage, faster switching speed and larger sense margin; on the other hand, the position of IL is a critical factor that affects switching voltage, thus, IL could be modulated to achieve higher switching speed and better power consumption. In summary, one-sided IL shows better electrical characteristics.
In addition, if we want to achieve higher storage capacity, 3D stack structure is an inevitable solution; however, to avoid the misread situation due to unexpected current flow, for one RRAM device we need another diode to form a 1D1R structure. In this work, we combined a simple metal-semiconductor diode and a RRAM to a TaN/ZrTiOx/Ni/n+-Si structure, the advantages are following, first, this structure is compatible with the incumbent ULSI technology; second, reduced the cost due to discard the expensive and hardly processing metal, such as W and Pt. Additionally, this structure is combined the one-sided IL formation that will further improve the electrical characteristics of RRAM.

G. E. Moore, "Cramming more components onto integrated circuits," Electronics, vol. 38, no. 8, pp. 114-117, 1965.
[2] Wikipedia contributors. (2014). Moore's law. [Online]. Available: http://en.wikipedia.org/w/index.php?title=Moore%27s_law&oldid=625191431
[3] C. Claeys, and E. Simoen, "Advanced germanium MOS devices," in Germanium-based technologies: From materials to devices, 1st ed. Amsterdam, Netherland: Elsevier, 2011, pp. 364-367.
[4] P. A. Packan, "Pushing the limits," Science, vol. 285, no. 5436, pp. 2079-2081, 1999.
[5] K. Roy, S. Mukhopadhyay, and H. Mahmoodi-Meimand, "Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits," Proc. IEEE, vol. 91, no. 2, pp. 305-327, 2003.
[6] S. K. Gupta, J. Singh, and J. Akhtar, "Materials and processing for gate dielectrics on silicon carbide (SiC) surface," in Physics and technology of silicon carbide devices, 1st ed. 2012, pp. 207-234.
[7] A. Berthelot, C. Caillat, V. Huard, S. Barnola, B. Boeck, H. Del Puppo, N. Emonet, and F. Lalanne, "Highly reliable TiN/ZrO2/TiN 3d stacked capacitors for 45 nm embedded dram technologies," in Proc. Eur. Solid State Device Res., 2006, pp. 343-346.
[8] C. Cheng, S. Lin, K. Jhou, W. Chen, C. Chou, F. Yeh, J. Hu, M. Hwang, T. Arikado, and S. McAlister, "High density and low leakage current in MIM capacitors processed at 300 oC," IEEE Electron Device Lett., vol. 29, no. 8, pp. 845-847, 2008.
[9] W. He, D. S. H. Chan, L. Zhang, and B. J. Cho, "Cubic-structured HfO2 with optimized doping of lanthanum for higher dielectric constant," IEEE Electron Device Lett., vol. 30, no. 6, pp. 623-625, 2009.
[10] L. Zhang, W. He, D. S. H. Chan, and B. J. Cho, "High-performance MIM capacitors using HfLaO-based dielectrics," IEEE Electron Device Lett., vol. 31, no. 1, pp. 17-19, 2010.
[11] C. H. Cheng, H. C. Pan, H. J. Yang, C. N. Hsiao, C. P. Chou, S. P. McAlister, and A. Chin, "Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode," IEEE Electron Device Lett., vol. 28, no. 12, pp. 1095-1097, 2007.
[12] K. C. Chiang, C. H. Cheng, K. Y. Jhou, H. C. Pan, C. N. Hsiao, C. P. Chou, S. P. McAlister, A. Chin, and H. L. Hwang, "Use of a high-work-function Ni electrode to improve the stress reliability of analog SrTiO3 metal–insulator–metal capacitors," IEEE Electron Device Lett., vol. 28, no. 8, pp. 694-696, 2007.
[13] C. H. Lee, S. H. Hur, Y. C. Shin, J. H. Choi, D. G. Park, and K. Kim, "Charge-trapping device structure of SiO2/SiN/high-k dielectric Al2O3 for high-density flash memory," Appl. Phys. Lett., vol. 86, no. 15, p. 152908, 2005.
[14] Y. N. Tan, W. K. Chim, W. K. Choi, M. S. Joo, and B. Jin Cho, "Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation," IEEE Trans. Electron Devices, vol. 53, no. 4, pp. 654-662, 2006.
[15] Y. H. Wu, L. L. Chen, Y. S. Lin, M. Y. Li, and H. C. Wu, "Nitrided tetragonal ZrO2 as the charge-trapping layer for nonvolatile memory application," IEEE Electron Device Lett., vol. 30, no. 12, pp. 1290-1292, 2009.
[16] C. H. Lai, A. Chin, H. L. Kao, K. M. Chen, M. Hong, J. Kwo, and C. C. Chi, "Very low voltage SiO2/HfON/HfAlO/TaN memory with fast speed and good retention," in Proc. VLSI Symp. Tech. Dig., 2006, pp. 54-55.
[17] K. Prall, "Scaling non-volatile memory below 30nm," in Proc. Non-Volatile Semiconductor Memory Workshop, 2007, pp. 5-10.
[18] T. W. Hickmott, "Low‐frequency negative resistance in thin anodic oxide films," J. Appl. Phys., vol. 33, no. 9, pp. 2669-2682, 1962.
[19] S. P. Thermadam, S. Bhagat, T. Alford, Y. Sakaguchi, M. Kozicki, and M. Mitkova, "Influence of Cu diffusion conditions on the switching of Cu–SiO2-based resistive memory devices," Thin Solid Films, vol. 518, no. 12, pp. 3293-3298, 2010.
[20] K. C. Chang, J. W. Huang, T. C. Chang, T. M. Tsai, K. H. Chen, T. F. Young, J. H. Chen, R. Zhang, J. C. Lou, and S. Y. Huang, "Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer," Nanoscale Res. Lett., vol. 8, no. 1, pp. 1-5, 2013.
[21] A. Prakash, D. Jana, and S. Maikap, "TaOx-based resistive switching memories: Prospective and challenges," Nanoscale Res. Lett., vol. 8, no. 1, pp. 1-17, 2013.
[22] H. Akinaga, and H. Shima, "Resistive random access memory (ReRAM) based on metal oxides," Proc. IEEE, vol. 98, no. 12, pp. 2237-2251, 2010.
[23] N. Xu, L. Liu, X. Sun, X. Liu, D. Han, Y. Wang, R. Han, J. Kang, and B. Yu, "Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories," Appl. Phys. Lett., vol. 92, no. 23, p. 232112, 2008.
[24] Z. Wang, W. Zhu, A. Du, L. Wu, Z. Fang, X. A. Tran, W. Liu, K. Zhang, and H.-Y. Yu, "Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping," IEEE Trans. Electron Devices, vol. 59, no. 4, pp. 1203-1208, 2012.
[25] C. H. Cheng, C. Y. Tsai, A. Chin, and F. S. Yeh, "High performance ultra-low energy RRAM with good retention and endurance," in Proc. Tech. Dig. Int. Electron Devices. Meet., 2010, pp. 19.14.11-19.14.14.
[26] J. S. Choi, J. S. Kim, I. R. Hwang, S. H. Hong, S. H. Jeon, S. O. Kang, B. H. Park, D. C. Kim, M. J. Lee, and S. Seo, "Different resistance switching behaviors of NiO thin films deposited on Pt and SrRuO3 electrodes," Appl. Phys. Lett., vol. 95, no. 2, p. 022109, 2009.
[27] M. C. Wu, Y. W. Lin, W. Y. Jang, C. H. Lin, and T. Y. Tseng, "Low-power and highly reliable multilevel operation in 1T1R RRAM," IEEE Electron Device Lett., vol. 32, no. 8, pp. 1026-1028, 2011.
[28] Y. H. Wu, M. L. Wu, J. R. Wu, and L. L. Chen, "Ge-stabilized tetragonal ZrO2 as gate dielectric for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate," Appl. Phys. Lett., vol. 97, no. 4, p. 043503, 2010.
[29] K. S. Tan, S. Kiriaki, M. De Wit, J. W. Fattaruso, C. Y. Tsay, W. E. Matthews, and R. K. Hester, "Error correction techniques for high-performance differential A/D converters," IEEE J. Solid-State Circuits, vol. 25, no. 6, pp. 1318-1327, 1990.
[30] ITRS. (2013). RF and analog/mixed-signal technologies (RFAMS). [Online]. Available: http://www.itrs.net/Links/2013ITRS/2013Tables/RFAMS_2013Tables.xlsx.
[31] G. He, M. Liu, L. Zhu, M. Chang, Q. Fang, and L. Zhang, "Effect of postdeposition annealing on the thermal stability and structural characteristics of sputtered HfO2 films on Si (100)," Surf. Sci., vol. 576, no. 1, pp. 67-75, 2005.
[32] X. Zhao, and D. Vanderbilt, "Phonons and lattice dielectric properties of zirconia," Phys. Rev. B, vol. 65, no. 7, p. 075105, 2002.
[33] Y. H. Wu, J. R. Wu, C. Y. Hou, C. C. Lin, M. L. Wu, and L. L. Chen, "ZrTiOx-based resistive memory with MIS structure formed on Ge layer," IEEE Electron Device Lett., vol. 33, no. 3, pp. 435-437, 2012.
[34] R. Waser, R. Dittmann, G. Staikov, and K. Szot, "Redox-based resistive switching memories – nanoionic mechanisms, prospects, and challenges," Adv. Mater., vol. 21, no. 25-26, pp. 2632-2663, 2009.
[35] U. Russo, D. Kamalanathan, D. Ielmini, A. L. Lacaita, and M. N. Kozicki, "Study of multilevel programming in programmable metallization cell (PMC) memory," IEEE Trans. Electron Devices, vol. 56, no. 5, pp. 1040-1047, 2009.
[36] C. Lenser, A. Kuzmin, J. Purans, A. Kalinko, R. Waser, and R. Dittmann, "Probing the oxygen vacancy distribution in resistive switching Fe-SrTiO3 metal-insulator-metal-structures by micro-x ray absorption near-edge structure," J. Appl. Phys., vol. 111, no. 7, pp. 076101, 2012.
[37] F. Nardi, S. Balatti, S. Larentis, and D. Ielmini, "Complementary switching in metal oxides: Toward diode-less crossbar rrams," in Proc. Tech. Dig. Int. Electron Devices. Meet., 2011, pp. 31.31.31-31.31.34.
[38] K. Szot, W. Speier, G. Bihlmayer, and R. Waser, "Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3," Nat. Mater., vol. 5, no. 4, pp. 312-320, 2006.
[39] D. Ielmini, F. Nardi, and C. Cagli, "Universal reset characteristics of unipolar and bipolar metal-oxide RRAM," IEEE Trans. Electron Devices, vol. 58, no. 10, pp. 3246-3253, 2011.
[40] J. J. Huang, C. W. Kuo, W. C. Chang, and T. H. Hou, "Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode," Appl. Phys. Lett., vol. 96, no. 26, p. 262901, 2010.
[41] W. Y. Park, G. H. Kim, J. Y. Seok, K. M. Kim, S. J. Song, M. H. Lee, and C. S. Hwang, "A Pt/TiO2/Ti schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays," Nanotechnology, vol. 21, no. 19, p. 195201, 2010.
[42] D. Y. Lee, T. L. Tsai, and T. Y. Tseng, "Unipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristics," Appl. Phys. Lett., vol. 103, no. 3, p. 032905, 2013.
[43] H. Shima, F. Takano, H. Muramatsu, H. Akinaga, I. H. Inoue, and H. Takagi, "Control of resistance switching voltages in rectifying Pt/TiOx/Pt trilayer," Appl. Phys. Lett., vol. 92, no. 4, p. 043510, 2008.
[44] X. A. Tran, W. Zhu, W. J. Liu, Y. C. Yeo, B. Y. Nguyen, and H. Y. Yu, "A self-rectifying AlOy bipolar RRAM with Sub-50-uA set/reset current for cross-bar architecture," IEEE Electron Device Lett., vol. 33, no. 10, pp. 1402-1404, 2012.
[45] S. Kim, B. Cho, M. Li, C. Zhu, A. Chin, and D. Kwong, "HfO2 and lanthanide-doped HfO2 MIM capacitors for RF/mixed IC applications," in Proc. VLSI Technology Digest, 2003, pp. 77-78.
[46] S. Y. Lee, H. Kim, P. C. McIntyre, K. C. Saraswat, and J. S. Byun, "Atomic layer deposition of ZrO2 on W for metal-insulator-metal capacitor application," Appl. Phys. Lett., vol. 82, no. pp. 2874, 2003.
[47] B. Hudec, K. Husekova, E. Dobrocka, T. Lalinsky, J. Aarik, A. Aidla, and K. Frohlich, "High-permittivity metal-insulator-metal capacitors with TiO2 rutile dielectric and RuO2 bottom electrode," in Proc. IOP Conference Series: Materials Science and Engineering, 2010, p. 012024.
[48] K. Chiang, C. Lai, A. Chin, H. Kao, S. McAlister, and C. Chi, "Very high density RF MIM capacitor compatible with VLSI," in Proc. Microwave Symposium Digest, IEEE MTT-S International, 2005, pp. 287-290.
[49] K. Chiang, C. Huang, A. Chin, W. Chen, S. McAlister, H. Chiu, J. Chen, and C. Chi, "High-k Ir/TiTaO/TaN capacitors suitable for analog IC applications," IEEE Electron Device Lett., vol. 26, no. 7, pp. 504-506, 2005.
[50] V. Mikhelashvili, P. Thangadurai, W. D. Kaplan, and G. Eisenstein, "High capacitance density metal-insulator-metal structures based on a high-k HfNxOy–SiO2–HfTiOy laminate stack," Appl. Phys. Lett., vol. 92, no. 13, p. 132902, 2008.
[51] V. Mikhelashvili, G. Eisenstein, and A. Lahav, "High capacitance density metal-insulator-metal structure based on Al2O3-HfTiO nanolaminate stacks," Appl. Phys. Lett., vol. 90, no. p. 013506, 2007.
[52] Y. H. Wu, B. Y. Chen, L. L. Chen, J. R. Wu, and M. L. Wu, "Metal-insulator-metal capacitor with high capacitance density and low leakage current using ZrTiO4 film," Appl. Phys. Lett., vol. 95, no. 11, p. 113502, 2009.
[53] J. J. Yang, J. D. Chen, R. Wise, P. Steinmann, M. B. Yu, D. L. Kwong, M. F. Li, Y. C. Yeo, and C. Zhu, "Effective modulation of quadratic voltage coefficient of capacitance in MIM capacitors using dielectric stack," IEEE Electron Device Lett., vol. 30, no. 5, pp. 460-462, 2009.
[54] B. Y. Tsui, H. H. Hsu, and C. H. Cheng, "High-performance metal–insulator–metal capacitors with stacked dielectric," IEEE Electron Device Lett., vol. 31, no. 8, pp. 875-877, 2010.
[55] Y. H. Wu, C. C. Lin, L. L. Chen, Y. C. Hu, J. R. Wu, and M. L. Wu, "High-performance metal-insulator-metal capacitor with Ge-stabilized tetragonal ZrO2/amorphous La-doped ZrO2 dielectric," Appl. Phys. Lett., vol. 98, no. 1, p. 013506, 2011.
[56] Y. H. Wu, C. K. Kao, B. Y. Chen, Y. S. Lin, M. Y. Li, and H. C. Wu, "High density metal-insulator-metal capacitor based on ZrO2/Al2O3/ZrO2 laminate dielectric," Appl. Phys. Lett., vol. 93, no. 3, p. 033511, 2008.
[57] Y. H. Wu, C. C. Lin, Y. C. Hu, M. L. Wu, J. R. Wu, and L. L. Chen, "High-performance metal-insulator-metal capacitor using stacked TiO2/Y2O3 as insulator," IEEE Electron Device Lett., vol. 32, no. 8, pp. 1107-1109, 2011.
[58] Y. H. Wu, L. L. Chen, W. C. Chen, C. C. Lin, M. L. Wu, and J. R. Wu, "MOS devices with tetragonal ZrO2 as gate dielectric formed by annealing ZrO2/Ge/ZrO2 laminate," Microelectron. Eng., vol. 88, no. 7, pp. 1361-1364, 2011.
[59] H. S. Baik, M. Kim, G. S. Park, S. A. Song, M. Varela, A. Franceschetti, S. T. Pantelides, and S. J. Pennycook, "Interface structure and non-stoichiometry in HfO2 dielectrics," Appl. Phys. Lett., vol. 85, no. 4, pp. 672-674, 2004.
[60] K. McKenna, A. Shluger, V. Iglesias, M. Porti, M. Nafría, M. Lanza, and G. Bersuker, "Grain boundary mediated leakage current in polycrystalline HfO2 films," Microelectron. Eng., vol. 88, no. 7, pp. 1272-1275, 2011.
[61] K. Xiong, J. Robertson, and S. J. Clark, "Passivation of oxygen vacancy states in HfO2 by nitrogen," Appl. Phys. Lett., vol. 99, no. 4, p. 044105, 2006.
[62] Y. H. Wu, W. Y. Ou, C. C. Lin, J. R. Wu, M. L. Wu, and L. L. Chen, "MIM capacitors with crystalline-TiO2/SiO2 stack featuring high capacitance density and low voltage coefficient," IEEE Electron Device Lett., vol. 33, no. 1, pp. 104-106, 2012.
[63] K. Sun Jung, C. Byung Jin, M. F. Li, S. J. Ding, M. B. Yu, Z. Chunxiang, A. Chin, and D. L. Kwong, "Engineering of voltage nonlinearity in high-k MIM capacitor for analog/mixed-signal ICs," in Proc. VLSI Symp. Tech. Dig., 2004, pp. 218-219.
[64] L. L. Chen, Y. H. Wu, Y. B. Lin, C. C. Lin, and M. L. Wu, "ZrLaOx/ZrTiOx/ZrLaOx laminate as insulator for MIM capacitors with high capacitance density and low quadratic voltage coefficient using canceling effect," IEEE Electron Device Lett., vol. 33, no. 10, pp. 1447-1449, 2012.
[65] K. Roh, S. Yang, B. Hong, Y. Roh, J. Kim, and D. Jung, "Structural and electrical properties of yttrium oxide with tungsten gate," J. Korean Phys. Soc., vol. 40, no. pp. 103-106, 2002.
[66] S. Campbell, H. Kim, D. Gilmer, B. He, T. Ma, and W. Gladfelter, "Titanium dioxide (TiO2)-based gate insulators," IBM J. Res. Develop., vol. 43, no. 3, pp. 383-392, 1999.
[67] S. J. Ding, H. Hu, H. F. Lim, S. J. Kim, X. F. Yu, C. X. Zhu, M. F. Li, B. J. Cho, D. S. H. Chan, and S. C. Rustagi, "High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics," IEEE Electron Device Lett., vol. 24, no. 12, pp. 730-732, 2003.
[68] J. Y. Tewg, "Zirconium-doped tantalum oxide high-k gate dielctric films," Ph. D., Texas A&M University, 2004.
[69] S. F. Wang, Y. F. Hsu, and Y. S. Lee, "Microstructural evolution and optical properties of doped TiO2 films prepared by RF magnetron sputtering," Ceram. Int., vol. 32, no. 2, pp. 121-125, 2006.
[70] D. Brassard, L. Ouellet, and M. Khakani, "Room-temperature deposited titanium silicate thin films for MIM capacitor applications," IEEE Electron Device Lett., vol. 28, no. 4, pp. 261-263, 2007.
[71] C. Zhu, H. Hu, X. Yu, S. Kim, A. Chin, M. Li, B. Cho, and D. Kwong, "Voltage and temperature dependence of capacitance of high-k HfO2 MIM capacitors: A unified understanding and prediction," in Proc. IEDM Tech. Dig., 2003, pp. 879-882.
[72] K. Chiang, C. Lai, A. Chin, T. Wang, H. Chiu, J. R. Chen, S. McAlister, and C. Chi, "Very high-density (23 fF/μm2) RF MIM capacitors using high-k TaTiO as the dielectric," IEEE Electron Device Lett., vol. 26, no. 10, pp. 728-730, 2005.
[73] E. P. Gusev, V. Narayanan, and M. M. Frank, "Advanced high-k dielectric stacks with polysi and metal gates: Recent progress and current challenges," IBM J. Res. Develop., vol. 50, no. 4/5, pp. 387-410, 2006.
[74] C. B. Kaynak, M. Lukosius, I. Costina, B. Tillack, C. Wenger, G. Ruhl, and S. Rushworth, "Investigations of thermal annealing effects on electrical and structural properties of SrTaO based MIM capacitor," Microelectron. Eng., vol. 87, no. 12, pp. 2561-2564, 2010.
[75] S. Mondal, and T. M. Pan, "High-performance Ni/Lu2O3/TaN metal–insulator–metal capacitors," IEEE Electron Device Lett., vol. 32, no. 11, pp. 1576-1578, 2011.
[76] Y. H. Wu, L. L. Chen, R. J. Lyu, M. Y. Li, and H. C. Wu, "Tetragonal ZrO2-Al2O3 stack as high-κs gate dielectric for Si-based MOS devices," IEEE Electron Device Lett., vol. 31, no. 9, pp. 1014-1016, 2010.
[77] Z. Chunxiang, H. Hang, Y. Xiongfei, S. J. Kim, A. Chin, M. F. Li, C. Byung Jin, and D. L. Kwong, "Voltage and temperature dependence of capacitance of high-k HfO2 MIM capacitors: A unified understanding and prediction," in Proc. IEDM Tech. Dig., 2003, pp. 36.35.31-36.35.34.
[78] K. F. Albertin, and I. Pereyra, "Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer," J. Vac. Sci. Technol., B, vol. 27, no. 1, pp. 236-245, 2009.
[79] Y. H. Wu, C. C. Lin, L. L. Chen, B. Y. Chen, M. L. Wu, and J. R. Wu, "Impact of top electrode on electrical stress reliability of metal-insulator-metal capacitor with amorphous ZrTiO4 film," Appl. Phys. Lett., vol. 96, no. 13, p. 133501, 2010.
[80] J. Young Hun, L. Jong Bong, S. Nahm, H. J. Sun, and H. J. Lee, "High-performancemetal-insulator-metal capacitors using amorphous basm2ti4o12 thin film," IEEE Electron Device Lett., vol. 28, no. 1, pp. 17-20, 2007.
[81] R. Asahi, T. Morikawa, T. Ohwaki, K. Aoki, and Y. Taga, "Visible-light photocatalysis in nitrogen-doped titanium oxides," Science, vol. 293, no. 5528, pp. 269-271, 2001.
[82] Y. Cong, J. Zhang, F. Chen, and M. Anpo, "Synthesis and characterization of nitrogen-doped TiO2 nanophotocatalyst with high visible light activity," J. Phys. Chem. C, vol. 111, no. 19, pp. 6976-6982, 2007.
[83] C. S. Kang, H. J. Cho, R. Choi, Y. H. Kim, C. Y. Kang, S. J. Rhee, C. H. Choi, M. S. Akbar, and J. C. Lee, "The electrical and material characterization of hafnium oxynitride gate dielectrics with TaN-gate electrode," IEEE Trans. Electron Devices, vol. 51, no. 2, pp. 220-227, 2004.
[84] P. Gonon, and C. Vallee, "Modeling of nonlinearities in the capacitance-voltage characteristics of high-k metal-insulator-metal capacitors," Appl. Phys. Lett., vol. 90, no. 14, p. 142906, 2007.
[85] J. R. Wu, Y. H. Wu, C. C. Lin, W. Y. Ou, M. L. Wu, and L. L. Chen, "Effect of nitrogen passivation on the performance of MIM capacitors with a crystalline-TiO2/SiO2 stacked insulator," IEEE Electron Device Lett., vol. 33, no. 6, pp. 878-880, 2012.
[86] N. Umezawa, K. Shiraishi, T. Ohno, H. Watanabe, T. Chikyow, K. Torii, K. Yamabe, K. Yamada, H. Kitajima, and T. Arikado, "First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics," Appl. Phys. Lett., vol. 86, no. 14, p. 143507, 2005.
[87] A. Paskaleva, M. Lemberger, and A. Bauer, "Stress induced leakage current mechanism in thin Hf-silicate layers," Appl. Phys. Lett., vol. 90, no. 4, p. 042105, 2007.
[88] S. Kim, and Y. K. Choi, "A comprehensive study of the resistive switching mechanism in Al/TiOx/Al-structured RRAM," IEEE Trans. Electron Devices, vol. 56, no. 12, pp. 3049-3054, 2009.
[89] R. Degraeve, A. Fantini, S. Clima, B. Govoreanu, L. Goux, Y. Y. Chen, D. Wouters, P. Roussel, G. S. Kar, and G. Pourtois, "Dynamic ‘hour glass’ model for set and reset in HfO2 RRAM," in Proc. VLSI Technology (VLSIT), 2012 Symposium on, 2012, pp. 75-76.
[90] R.-V. Wang, and P. C. McIntyre, "O18 tracer diffusion in Pb(Zr, Ti)O3 thin films: A probe of local oxygen vacancy concentration," J. Appl. Phys., vol. 97, no. 2, p. 023508, 2005.
[91] C. Besset, S. Bruyère, S. Blonkowski, S. Crémer, and E. Vincent, "MIM capacitance variation under electrical stress," Microelectron. Reliab., vol. 43, no. 8, pp. 1237-1240, 2003.
[92] Y. M. Kim, and J. S. Lee, "Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices," J. Appl. Phys., vol. 104, no. 11, p. 114115, 2008.
[93] M. G. Sung, W. G. Kim, J. H. Yoo, S. J. Kim, J. N. Kim, B. G. Gyun, J. Y. Byun, T. W. Kim, K. Won, M. S. Joo, J. S. Roh, and S. K. Park, "The effect of crystallinity of HfO2 on the resistive memory switching reliability," in Proc. Int. Reliab. Phys. Symp., 2011, pp. 6B.5.1-6B.5.5.
[94] H. Y. Jeong, S. K. Kim, J. Y. Lee, and S. Y. Choi, "Role of interface reaction on resistive switching of metal/amorphous TiO2/Al RRAM devices," J. Electrochem. Soc., vol. 158, no. 10, pp. H979-H982, 2011.
[95] D. H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X. S. Li, G. S. Park, B. Lee, S. Han, M. Kim, and C. S. Hwang, "Atomic structure of conducting nanofilaments in TiO2 resistive switching memory," Nat. Nanotechnol., vol. 5, no. 2, pp. 148-153, 2010.
[96] J. Shin, I. Kim, K. P. Biju, M. Jo, J. Park, J. Lee, S. Jung, W. Lee, S. Kim, and S. Park, "TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application," J. Appl. Phys., vol. 109, no. 3, p. 033712, 2011.
[97] B. Gao, H. W. Zhang, S. Yu, B. Sun, L. F. Liu, X. Y. Liu, Y. Wang, R. Q. Han, J. F. Kang, and B. Yu, "Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology," in Proc. VLSI Symp. Tech. Dig., 2009, pp. 30-31.
[98] Q. Liu, S. Long, W. Wang, Q. Zuo, S. Zhang, J. Chen, and M. Liu, "Improvement of resistive switching properties in ZrO2-based ReRAM with implanted Ti ions," IEEE Electron Device Lett., vol. 30, no. 12, pp. 1335-1337, 2009.
[99] H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien, and M. J. Tsai, "Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM," in Proc. IEDM Tech. Dig., 2008, pp. 1-4.
[100] S. Kim, D. Lee, J. Park, S. Jung, W. Lee, J. Shin, J. Woo, G. Choi, and H. Hwang, "Defect engineering: Reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices," Nanotechnology, vol. 23, no. 32, p. 325702, 2012.
[101] L. Goux, A. Fantini, G. Kar, Y. Chen, N. Jossart, R. Degraeve, S. Clima, B. Govoreanu, G. Lorenzo, and G. Pourtois, "Ultralow sub-500 nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering," in Proc. VLSI Symp. Tech. Dig., 2012, pp. 159-160.
[102] H. Lv, and T. Tang, "The role of CuAlO interface layer for switching behavior of Al/CuxO/Cu memory device," IEEE Electron Device Lett., vol. 31, no. 12, pp. 1464-1466, 2010.
[103] C. Cheng, A. Chin, and F. Yeh, "Ultralow-power Ni/GeO/STO/TaN resistive switching memory," IEEE Electron Device Lett., vol. 31, no. 9, pp. 1020-1022, 2010.
[104] D. J. Seong, J. Park, N. Lee, M. Hasan, S. Jung, H. Choi, J. Lee, M. Jo, W. Lee, and S. Park, "Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile memory applications," in Proc. Tech. Dig. Int. Electron Devices. Meet., 2009, pp. 1-4.
[105] E. Jud, M. Tang, and Y. M. Chiang, "Stability of HfO2/SiOx/Si surficial films at ultralow oxygen activity," J. Appl. Phys., vol. 103, no. 11, p. 114108, 2008.
[106] Y. H. Do, J. S. Kwak, Y. C. Bae, K. Jung, H. Im, and J. P. Hong, "Hysteretic bipolar resistive switching characteristics in TiO2/TiO2 multilayer homojunctions," Appl. Phys. Lett., vol. 95, no. 9, p. 093507, 2009.
[107] I. Hirano, M. Saitoh, T. Numata, and Y. Mitani, "Influence of channel area scaling on weibull distribution of TDDB for poly-Si channel FET," in Proc. Solid State Dev. and Mater., 2011, pp. 897-898.
[108] Y.-B. Kim, S. R. Lee, D. Lee, C. B. Lee, M. Chang, J. H. Hur, M. J. Lee, G. S. Park, C. J. Kim, and U. Chung, "Bi-layered RRAM with unlimited endurance and extremely uniform switching," in Proc. VLSI Symp. Tech. Dig., 2011, pp. 52-53.
[109] B. Long, Y. Li, and R. Jha, "Switching characteristics of Ru/HfO2/TiO2-x/Ru RRAM devices for digital and analog nonvolatile memory applications," IEEE Electron Device Lett., vol. 33, no. 5, pp. 706-708, 2012.
[110] Y. E. Syu, T. C. Chang, T. M. Tsai, G. W. Chang, K. C. Chang, Y. H. Tai, M. J. Tsai, Y. L. Wang, and S. M. Sze, "Silicon introduced effect on resistive switching characteristics of WOx thin films," Appl. Phys. Lett., vol. 100, no. 2, p. 022904, 2012.
[111] S. Lee, A. Kim, J. Lee, S. Chang, H. Yoo, T. Noh, B. Kahng, M.-J. Lee, C. Kim, and B. Kang, "Reduction in high reset currents in unipolar resistance switching Pt/SrTiOx/Pt capacitors using acceptor doping," Appl. Phys. Lett., vol. 97, no. 9, p. 093505, 2010.
[112] H. D. Kim, H. M. An, Y. Seo, and T. Geun Kim, "Transparent resistive switching memory using ito/aln/ito capacitors," IEEE Electron Device Lett., vol. 32, no. 8, pp. 1125-1127, 2011.
[113] M. Cao, Y. Chen, J. Sun, D. Shang, L. Liu, J. Kang, and B. Shen, "Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices," Appl. Phys. Lett., vol. 101, no. 20, p. 203502, 2012.
[114] Y. C. Yang, F. Pan, and F. Zeng, "Bipolar resistance switching in high-performance Cu/ZnO:Mn/Pt nonvolatile memories: Active region and influence of joule heating," New J. Phys., vol. 12, no. 2, p. 023008, 2010.
[115] X. Wu, Z. Fang, K. Li, M. Bosman, N. Raghavan, X. Li, H. Yu, N. Singh, G. Lo, and X. Zhang, "Chemical insight into origin of forming-free resistive random-access memory devices," Appl. Phys. Lett., vol. 99, no. 13, p. 133504, 2011.
[116] Y. T. Li, S. B. Long, H. B. Lv, Q. Liu, M. Wang, H. W. Xie, K. W. Zhang, X. Y. Yang, and M. Liu, "Novel self-compliance bipolar 1D1R memory device for high-density RRAM application," in Proc. Int. Memory Workshop, 2013, pp. 184-187.
[117] M. J. Lee, S. Seo, D. C. Kim, S. E. Ahn, D. H. Seo, I. K. Yoo, I. G. Baek, D. S. Kim, I. S. Byun, S. H. Kim, I. R. Hwang, J. S. Kim, S. H. Jeon, and B. H. Park, "A low-temperature-grown oxide diode as a new switch element for high-density, nonvolatile memories," Adv. Mater., vol. 19, no. 1, pp. 73-76, 2007.
[118] B. S. Kang, S.-E. Ahn, M.-J. Lee, G. Stefanovich, K. H. Kim, W. X. Xianyu, C. B. Lee, Y. Park, I. G. Baek, and B. H. Park, "High-current-density CuOx/InZnOx thin-film diodes for cross-point memory applications," Adv. Mater., vol. 20, no. 16, pp. 3066-3069, 2008.
[119] W. Lee, D. Mauri, and C. Hwang, "High-current-density ITOx/NiOx thin-film diodes," Appl. Phys. Lett., vol. 72, no. 13, pp. 1584-1586, 1998.
[120] E. Katsia, N. Huby, G. Tallarida, B. Kutrzeba-Kotowska, M. Perego, S. Ferrari, F. C. Krebs, E. Guziewicz, M. Godlewski, and V. Osinniy, "Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications," Appl. Phys. Lett., vol. 94, no. 14, p. 143501, 2009.
[121] J. H. Oh, J. H. Park, Y. S. Lim, H. S. Lim, Y. T. Oh, J. S. Kim, J. M. Shin, Y. J. Song, K. C. Ryoo, and D. W. Lim, "Full integration of highly manufacturable 512Mb pram based on 90nm technology," in Proc. Tech. Dig. Int. Electron Devices Meet., 2006, pp. 1-4.
[122] L. Hangbing, L. Yingtao, L. Qi, L. Shibing, L. Ling, and L. Ming, "Self-rectifying resistive-switching device with a-Si/WO3 bilayer," IEEE Electron Device Lett., vol. 34, no. 2, pp. 229-231, 2013.
[123] J. Minseok, S. Dong-jun, K. Seonghyun, L. Joonmyoung, L. Wootae, P. Ju-Bong, P. Sangsoo, J. Seungjae, S. Jungho, L. Daeseok, and H. Hyunsang, "Novel cross-point resistive switching memory with self-formed Schottky barrier," in Proc. VLSI Symp. Tech. Dig., 2010, pp. 53-54.
[124] E. Linn, R. Rosezin, C. Kügeler, and R. Waser, "Complementary resistive switches for passive nanocrossbar memories," Nat. Mater., vol. 9, no. 5, pp. 403-406, 2010.
[125] M. L. Wu, Y. H. Wu, C. Y. Chao, C. C. Lin, and C. Y. Wu, "Crystalline ZrTiO4-gated Ge metal-semiconductor devices with amorphous yb2o3 as a passivation layer," IEEE Trans. Nanotechnol., vol. 12, no. 6, pp. 1018-1021, 2013.
[126] G. Tang, F. Zeng, C. Chen, H. Liu, S. Gao, C. Song, Y. Lin, G. Chen, and F. Pan, "Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer," Nanoscale, vol. 5, no. 1, pp. 422-428, 2013.
[127] Q. Wang, Y. Itoh, T. Hasegawa, T. Tsuruoka, S. Yamaguchi, S. Watanabe, T. Hiramoto, and M. Aono, "Nonvolatile three-terminal operation based on oxygen vacancy drift in a Pt/Ta2O5−x/Pt, Pt structure," Appl. Phys. Lett., vol. 102, no. 23, p. 233508, 2013.
[128] X. Tran, B. Gao, J. Kang, X. Wu, L. Wu, Z. Fang, Z. Wang, K. Pey, Y. Yeo, and A. Du, "Self-rectifying and forming-free unipolar HfOx based-high performance RRAM built by fab-avaialbe materials," in Proc. Tech. Dig. Int. Electron Devices. Meet., 2011, pp. 31.32.31-31.32.34.