本論文中，2個應用於無線都會區域網路(WiMAX)的互補式金氧半射頻前端電路會被提出並且驗證呈獻。這些電路都是在TSMC 0.18 微米單多晶層六金屬層之互補式金氧半場效電晶體製程來設計實現的，並且可以應用在能高度整合的直接降頻式接收器上。
在第一個射頻前端電路中，使用了負阻式的負載以增加增益和雜訊的表現。除此之外，還有一個直流偏移量的減低迴路是要用來解決直流偏移量所產生的問題。藉由量測結果的驗證可知，這個射頻前端電路有著11 dB的電壓轉換增益(CG)，-27.5 dBm 的1dB增益下降點(P1dB)，-14 dBm 的三階項截取點(IIP3)，23 dBm 的二階項截取點(IIP2)，和6.13 dB的雜訊指數(NF)。電路的總功率消耗為35.3毫瓦，而且是操作在1.8伏特的電壓下，面積大小是1000微米乘上998微米。在直流偏移量的減低迴路的幫助之下，此射頻前端電路輸出端的直流偏移量可以小於6 毫伏特，並且可以改善6 dBm的二階項截取點。
在第二個射頻前端電路中，增加了一個降低flicker雜訊的電路以改善在頻率較低時的雜訊表現。從模擬結果可得知，這個射頻前端電路有著33.68 dB的電壓轉換增益，-33.7 dBm 的1dB增益下降點，和一個近乎平坦的雜訊指數曲線。舉例來說，藉由模擬結果可以得知，在10 KHz點的雜訊指數可以有著13.8 dB的改善量。電路的總功率消耗為33.1毫瓦，而且是操作在1.8伏特的電壓狀況之下。

In this thesis, two CMOS RF front-end circuits are proposed for WiMAX applications. These circuits are realized in TSMC 0.18 um 1P6M CMOS process technology can be applied to direct conversion receivers for high integration.
For the first RF front-end circuit, the negative-resistance loading are used to increase the gain and the noise performance. Moreover, there is a DC-offset cancellation loop to solve the DC-offset problem. According to the measurement results, the RF front-end has a voltage conversion gain (CG) of 11 dB, a 1-dB gain compression point (P1dB) of -27.5 dBm, an input third-order intercept point (IIP3) of -14 dBm, an input second-order intercept point (IIP2) of 23 dBm, and a noise figure (NF) of 6.13 dB. The power consumption is 35.3 mW from a 1.8 V supply and its area is 1 mm2. With the help of the DC-offset cancellation loop circuits, the output DC-offset is smaller than 6 mV and the IIP2 improvement is 6dBm.
For the second circuits, a flicker-noise reduction circuit is added to increase the low-frequency noise performance. The simulation results show that this RF front-end has a voltage conversion gain of 33.68 dB, a 1-dB compression point of -33.7 dBm, and a flat noise figure curve. From the simulation results, the improvement of NF at 10 KHz is 13.8 dB. It dissipates 33.1 mW from a 1.8 V supply.

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