我們使用SiO2/TiO2堆疊介電層結構實現了適用於射頻/類比電路的高性能MIM電容。在實驗的過程中，我們逐步探討不同的堆疊厚度比例、熱處理條件和電漿處理條件對SiO2/TiO2 MIM電容的影響，並且得到了一個最佳化的結果。我們得到最佳的電容密度和α值滿足國際半導體技術藍圖(ITRS)在2016年對On-Chip RF MIM的要求，並且在頻散特性、溫度穩定性、可靠度方面都有很好的表現；較差的部分是漏電流密度，不過我們採用的電極是鋁電極而且漏電流的機制是Schottky emission，所以可以透過使用更高功函數的金屬來降低漏電流密度。SiO2/TiO2堆疊介電層結構會對MIM元件產生一種特殊的效應，在第三章中我們會介紹它。

第一章
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