近年來，積體光學元件發展越來越迅速，效能越來越好，且體積也越做越小(通常小於1 □m)，因此垂直與水平錐型結構之光學耦合器被研究來有效地將光源由光纖耦合至積體光學元件中；本論文研究一種新穎的製作方式，利用奈米壓印加上黃光微影的概念，以SU-8負型光阻與氮氧化矽(SiON)薄膜做為材料，提出具簡單又低成本的三維錐型漸變式光學耦合器製作原理與流程。由光束傳播法(Beam Propagation Method； BPM)計算光耦合效率與模擬結構尺寸，探討符合元件中耦合波導之折射係數的範圍為n=1.51~1.60，此範圍之SiON薄膜可簡單利用電漿輔助化學氣相沉積系統(plasma enhanced chemical vapor deposition；PECVD)得到。製程上，以SU-8旋塗成薄膜後，利用壓印成型的方法製作垂直方向的錐型結構，接著再利用SU-8為負型光阻的特性，使用標準黃光製程得到水平方向的錐型結構，完成三維錐型耦合器。量測實驗結果，當元件上有三維錐型結構且傳輸路徑為Pathway 1與Pathway 2時，不管是波長1550 nm範圍或1310 nm範圍，兩路徑整體損耗之頻譜幾乎完全相同，與無三維錐型結構之元件相比，整體損耗都提升了11dB以上；測試光纖與元件間對準， X軸與Y軸之方向皆可達到良好的對準偏移容忍度。

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