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研究生： 吳康華
Wu, Kang-Hua
論文名稱： 在高介電係數介電層上氮化鉭金屬閘極熱穩定性研究
Thermal Stability of TaN Metal Gate on High-k Dielectrics
指導教授： 洪銘輝
Hong, Minghwei
郭瑞年
Kwo, Ray-Nien
口試委員: 郭治群
學位類別： 碩士
Master
系所名稱： 工學院 - 材料科學工程學系
Materials Science and Engineering
論文出版年： 2011
畢業學年度： 99
語文別： 中文
論文頁數： 58
中文關鍵詞： 氮化鉭 、熱穩定性 、金屬閘極 、高介電係數 、介電層
外文關鍵詞： TaN, thermal stability, metal gate, high-k dielectric constant, dielectric
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    • 在極薄的氧化物下，傳統的多晶矽閘極已經不衍於用，主要有二個問題：第一，多晶矽會產生空乏區，進而增加等效氧化物厚度；第二，參雜物穿隧至下層，導致臨界電壓改變。為解決此問題，最直接的方法便是將多晶矽閘極改成金屬閘極或者金屬氮化物閘極，此閘極必須有四個條件：(1)適合的功函數；(2)低電阻率；(3)高熱穩定性；(4)相容於高介電係數介電層和製程整合。在諸多的金屬閘極中，氮化鉭兼具上述(3)和(4)作為閘極的優點。
    在此論文中，氮化鉭利用直流式濺鍍沉積於原子層沉積的高介電係數介電層上，其中包含了氧化鋁和氧化鉿鋁。透過X光繞射分析，氮化鉭薄膜結構經過900度C退火後，仍維持為面心立方。從穿透地電子顯微鏡影像發現，經過800度C退火氮化鉭與氧化鋁仍具有清晰的介面。氮化鉭薄膜的表面利用原子探真掃描，發覺其粗糙度維持在1.5nm以下。從金氧半二極電晶體量測電容電壓特性特性圖和漏電特性圖，並比較其與退火溫度之間的關係。在閘極偏壓為VFB-1V下所量測到的漏電流密度對氧化鋁和氧化鉿鋁分別為~2.4×10-8A/cm^2以及 ~8.5×10-8A/cm^2。

    Chapter 1 Introduction 1 1.1 Background 1 1.2 Conventional Si and SiO2 2 1.3 High-κ Gate Dielectrics and III-V Compound Semiconductors 4 1.4 Motivation 7 Chapter 2 Fundamental Theories and Instrumentations 9 2.1 Fundamentals of the metal-oxide-semiconductor (MOS) 9 Accumulation (VG < VFB) 9 Depletion (VFB < VG < VT) 10 Inversion (VG > VT) 11 2.2 Fundamentals of the MOSFET 14 2.3 Multi-Chamber Ultra-High Vacuum Molecular Beam Epitaxy System 16 2.4 Atomic Layer Depoisition 19 2.5 X-Ray Diffraction 21 2.6 High Resolution Transmission Electron Microscope 24 2.7 Atomic Force Microscope 27 2.8 Sputter Deposition 28 Chapter 3 Experiment 31 3.1 Experimental Procedure 31 3.2 Film Deposition 31 ALD Oxide Deposition 31 3.3 Process 33 3.4 Sample Analysis 36 X-Ray Diffraction 36 TEM Analysis 37 Electrical Property Measurement 39 Chapter 4 Result and Discussion 40 4.1 HR-TEM Image of Interfaces 40 4.2 Structure Analysis 43 4.3 Surface Morphology 44 4.4 Electrical Properties 46 Chapter 5 Conclusion 52 Reference: 53

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