本實驗利用積體電路製程技術製做出一個三電極奈米尺寸的薄膜橋載台，並利用Octanethiol[CH3(CH2)7SH]分子具有自我對準的功能(SAMs)正確地填入載台中，來分析長鏈分子的電性，不同於其他的分子電子學研究之處是首次採用三個電極的方式，研究的最終目的是要進一步製作出結構類似電晶體三個電極的元件，在不同的溫度及閘極電壓(Vg)下量測汲極電流-汲極電壓(Id-Vd，drain current-drain voltage)和汲極電流-閘極電壓(Id-Vg，drain current-gate voltage)曲線。

量測這些正常工作的元件從Id-Vd及Id-Vg分子曲線可看到場效應，並在電性上發現了分子特性的現象。從有外加閘極電壓與不外加閘極電壓所得到分子的I-V曲線分析其傳導機制，發現Octanethiol[CH3(CH2)7SH]分子在高溫低壓的傳導機制是跳躍傳導(hopping conduction)，在高壓的傳導機制是F.N.穿隧(Fowler-Nordheim Tunneling)。從同樣是Octanethiol[CH3(CH2)7SH]分子的不同樣本，由於製程上些許的不同，導致F.N.穿隧出現在高壓的區域不一樣，一是在負的汲極電壓，另一是在正的汲極偏壓。分析後也發現熱游離傳導方式(thermionic emission)的位障Φ(barrier height)，位障Φ會隨著外加的閘極電壓而有所變化。量測Id-Vg分子曲線在閘極電壓為零的附近，發現有像階梯(steplike)的分子曲線，由文獻發現可能是硫(S)與金(Au)所混成的能階(hybrid levels)，再外加大的閘極電壓分別在正的閘極電壓(4.5eV)發現分子的最低未佔有態分子軌域(LUMO，The Lowest Unoccupied Molecular Orbital)，在負的閘極電壓(-7eV)發現分子的最高佔有態分子軌域(HOMO，The Highest Occupied Molecular Orbital)，HOMO和LOMO之間的能量差約為11.5eV，未來在研究上可嘗試加大電壓範圍，經由I-V特性來確認分子的傳導機制，以獲得更加明確的理論模型來解釋。

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