研究生: |
王威超 Wei-Chau Wang |
---|---|
論文名稱: |
二氧化鈦延伸式閘極離子感測場效電晶體之研究 Study of Titanium dioxide thin film for extended gate ion sensitivity field effect transistors |
指導教授: |
陳建瑞
Jiann-Ruey Chan |
口試委員: | |
學位類別: |
碩士 Master |
系所名稱: |
工學院 - 材料科學工程學系 Materials Science and Engineering |
論文出版年: | 2004 |
畢業學年度: | 92 |
語文別: | 中文 |
論文頁數: | 77 |
中文關鍵詞: | 延伸式閘極離子感測場效電晶體 、離子感測場效電晶體 、二氧化鈦 |
外文關鍵詞: | EGFET, ISFET, TiO2 |
相關次數: | 點閱:4 下載:0 |
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中文摘要
二氧化鈦延伸式閘極離子感測場效電晶體之研究
本論文是以Dual E-Gun Evaporation System沈積Titanium Oxide (TiO2)薄膜,作為延伸式閘極離子感測場效電晶體(EGFET)的感測膜,以此進行溶液中H+離子濃度的量測。文中將討論:(1) TiO2感測膜對H+離子之擷取與元件相關電性。(2) TiO2感測膜的特性分析。
從實驗中得知TiO2薄膜EGFET的感測度50∼74 mV/PH(T=29℃),pH值範圍為3∼9,可以證明TiO2 薄膜是很好的H+離子的感測膜。
本論文中發現TiO2 薄膜的成分組成,當CO/CTi的比例越高的話,其感應靈敏度也會跟著上升,所以要改善TiO2 薄膜的感應靈敏度,可利用熱處理等方式提高TiO2 薄膜的含氧比例。
第六章 參考文獻
[1] MD NEWS No.42
[2] 科學月刊專欄:生物晶片專輯 標題:酵素晶片 作者:袁俊傑 楊裕雄
[3] Clark L.C. ,C. Lyois , “Electrode system for continuous monitoring in cardiovascular surgery”, Annals of the New York Academy of Sciences 102, 1962,pp29-33.
[4] B. H. Van Der Schoot, H. H. Van Den Vlekkert, N.F. De Rooij, “A Flow injection analysis system with galss-bonded ISFETs fot the simultaneous detection og calcium and potassium ions and pH value”, Sensors and Actuators B, vol. 4 (1991) 239-241.
[5] L. C. Zhong and G. X. Li, “Biosensor based on ISFET for penicillin determination, Sensors and Actuators B, vol. 14 (1993) 507-571.
[6] 武世香、虞惇、王貴華,“化學量感測器,感測器技術”,第一期 (1990) 57~62。
[7] B. D. Liu, Y. K. Su and S. C. Chen, “Ion-Sensitive Field-effect Transistor with silicon nitride for pH sensing”,Int. J. Electronic, vol. 67,NO.1,(1989) 59-63.
[8] 陳國誠. “ 生物固定化技術與產業應用 ”.2000.
[9] 孫銘偉. “ 利用微波電漿活化聚丙烯不織布纖維表面以固定
蛋白質 ”.1999.
[10] E. Delamarche,G. Sundarababu,H. Biebuyck,B. Michel,Ch.Gerber,
H. Sigrist,H. Wolf,H. Ringsdorf,N. Xanthopoulos,and H. J. Mathieu. “ Immobilization of Antibodies on a Photoactive Self-Assembled Monolayer on Gold ”.Langmuir1996;12;1997-2006.
[11] S. Caras, J. Janata, "Field effect transistor sensitive to penicillin", Analytical Chemistry 52, 1980, pp.1935-1937.
[12] C. D. Fung, P. W. Cheung and W. H. Ko, “A generalized theory of an electrolyte-insulator-semiconductor field-effect transistor”, IEEE Trans. Electron Devices, vol. ED-33, NO.1, (1986), 8-18.
[13] P. Bergveld, “Development of an ion-sensitive solid-state device for neurophysiological measurements”, IEEE Trans. on Bio-Med. Eng. (1970) 70-71.
[14] D.E. Yate, S. Levine and T.W. Healy, "Site-binding model of the electrical double layer at the oxide/water interface", Journal of the Chemical Society Faraday Transactions I 70, 1974, pp.1807-1818.
[15] D. Yu, G.H. Wang and S. X. Wu, Chemical Sensors, J. Sensors &
Transducer Tech.,No.3,pp.55~60 (1990)
[16] J. Van Der Spiegel, I. Lauks, P. Chan, and D. Babic, “The extended gate chemical sensitive field effect transistor as multi-species microprobe”, Sensors and Actuators, 4 (1983) 291-298.
[17] T. Katsube, T. Araki, M. Hara, T. Yaji, Si Kobayashi and K. Suzuki, "A multi-species biosensor with extended-gate field effect transistors", Proceeding of 6 th Sensor Symposium, Tsukuba Japan, 1986, pp.211-214.
[18] P. Bergveld and A. Sibbald, “Analytical and biomedical application of ion-sensitive field effect transistor”, Elsevier Science Publishing Company Inc., New York, p.p.2-60, 1988.
[19] Li-Lun Chi, Jung-Chuan Chou, Wen-Yaw Chung, Tai-Ping Sun and Shen-Kan Hsiung, “New structure of ion sensitive field effect transistor”, Proceedings of the biomedical Engineering Society 1988 Annual Symposium, Taiwan, pp. 328-331, December 1998.
[20] L.L. Chi, J.C. Chou, W.Y. Chung, T.P. Sun and S.K. Hsiung,
“Study on extended gate field effect transistor with tin oxide
sensing membrane”, Material Chemistry and Physics, 63 (2000)
19-23.
[21] L.L. Chi, L.T. Yin, J.C. Chou, W.Y. Chung, T.P. Sun, K.P. Hsiung and S.K. Hsiung, “Study on separative structure of EnFET to detect acetylcholine”, Sensors and Actuators B, 71 (2000) 68-72.
[22] J. Janata, "Electrochemistry of chemically sensitive field effect transistors", Sensors and Actuators 4, 1983, pp.255-265.
[23] V.V.Yakovlev,G.Scarel and C.R.Aita,Appl.Phys.Lett.,76(9),pp 1107-1109 (2000)
[24] C.C.Ting and S.Y.Chen,J.Appl.Phys.,88(8),pp 4628-4633(2000)
[25] Mills A.and S.L.Hunte,“An overview of semiconductor photocatalysis ”,J.Photochem.&Photobio.A:Chemistry,108,pp1-35 (1997)
[26] B.R.Weinberger and R.B.Garber,Appl.Phys.Lett.,66(18),pp 2409-2411 (1995)
[27] J.D.DeLoach and C.R.Aita,J.Vac.Sci.Technol.A,16(3),pp
1963-1968 (1998)
[28] R.B.van Dover,Appl.Phys.Lett.,74(20),pp 3041-3043 (1999)
[29] W.D.Brown,W.W.Grannemann,Thin Solid Films,51,pp 119-132
(1978)
[30] M.Takeuchi,T.Itoh and H.Nagasaka,Thin Solid Film,51 ,pp 83-88 (1978).
[31] S.K.Tiku and G.C.Smith,Journal of Electronic Materials,13(2), pp 273-279 (1984)
[32] J. O. Carlsson, Thin Solid Film, p.130, 261, (1985).
[33] O.Treichel,V.Kirchhoff,Surface and Coating Technol.,123,pp 268-272 (2000)
[34] H.K.Jang,S.W.Whangbo,H.B.Kim,K.Y.Im,Y.S.Lee,I.W.Lyo,and C.N.Whang,J.Vac.Sci.Technol.A,18(3),pp 917-921(2000)
[35] K.Yokota,T.Yamada,F.Miyashita,K.Hirai,H.Takano and M.Kumagai,Thin Solid Films,334,pp109-112 (1998)
[36] J.V.Grahn,and M.Linder,J.Vac.Sci.Technol.A,16(4),pp 2495-2500 (1998)
[37] G.P.Burns,J.Appl.Phys.65(5),pp2095-2097 (1989)
[38] G.P.Burns,I.S.Baldwin,M.P.Hastings,and J.G.Wilkes,
J. Appl.Phys.66(6),pp 2320-2324 (1989)
[39] P.K. shin , “The pH-sensing and light-induced drift properties of TiO2 thin films deposited by MOCVD” 2-39-1 Kurokami, Kumamota 860-8555, Japan (2003)
[40] W. Torbicz, Z. Sypniewska, Sens. Actuator B 7 (1992) 565.
[41] 徐清彬、翁明壽,二氧化鈦薄膜的性質和結構分析與其光觸媒行為 國立東華大學材料科學與工程研究所碩士論文
[42] Y. H. Lee, K. K. Chan, and M. J. Brady, J. Vac. Sci. Technol.
A,13(3), pp 596-601 (1995)
[43] A. Watanabe, Y. Imai, Thin Solid Films, 348, pp 63-68 (1999)
[44] C. C. Ting and S. Y. Chen, J. Appl. Phys., 88(8), pp 4628-4633
(2000)