非揮發性電阻式記憶體因具備操作電壓低、操作速度快、耐久性佳、記憶元件面積小、及結構簡單化等優點，在目前的研究中備受矚目。近期以過渡金屬的二元氧化物為材料的這方面研究中，如氧化鋅和二氧化鉿等，已得到相當不錯的成果，然而要實際應用於記憶體的開發上，需要對電阻轉換機制更深入瞭解。
本實驗成功以原子層化學氣相沉積法於TiN/Ti/SiO2/Si基板上鍍製HfO2薄膜，再鍍製Pt上電極形成金屬/電阻層/金屬(MIM)結構的電阻式記憶體元件。進一步針對Pt/HfO2/TiN結構，嘗試於上或下電極介面加入TiO2薄膜，形成HfO2‐TiO2的疊層薄膜結構，在所設計的Type 1 : Pt/HfO2/TiN、Type 2 : Pt/HfO2/TiO2/TiN、Type 3 : Pt/TiO2/HfO2/TiN、Type 4 : Pt/TiO2/HfO2/TiO2/TiN等四種結構中，皆觀察到雙極性電阻轉換效應。利用材料分析、空間電荷限制電流理論分析、電極面積效應分析，並綜合電性量測的結果，嘗試探討TiO2薄膜於不同介面位置對電阻轉換的影響，試圖從中歸納出可能的電阻轉換機制。

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