本研究探討化學氣相沈積法(CVD)成長碳纖維之製程參數與其場發射特性，實驗結果發現石墨結晶性不良之碳纖維，經場發射量測會造成石墨層破壞，導致場發射性質先提升再劣化，另外將奈米碳管摻入ITO溶膠中，以旋鍍法製備場發射陰極材料具有良好之附著性，奈米碳管由薄膜裂縫露出表面，提供電子場發射位置，但因分散性不良導致發射電子位置不均。比較各種場發射陰極材料之製程，以網印法最具工業化潛力，本研究將奈米碳管與銀膠配製成碳管銀膠並網印於陶瓷基材上，經過熱處理可以得到很好的場發射特性，實驗中嘗試改變電極幾何形狀以探討其發射電子的分佈情況與場發射特性，結果發現陰極經陣列化處理可提高場發射性質與電子分佈均勻性，其中以環狀電極圖形可以達到極高的電流密度，其中以二甲苯成長奈米碳管束所製備之陰極樣品，在低操作電壓下(300V)可達30 mA/cm2之電流密度，起始電場為0.5-0.6 V/μm，臨界電場為1.7 V/μm，於更高操作電壓下(500V)達到145-154 mA/cm2之電流密度，起始電場為0.6-1.0 V/μm。經模擬與實驗結果得知電極邊緣之電場較大，位於此處之奈米碳管最容易發射電子，依此原則可以設計出不同形狀之圖形，提供未來製作場發射發光元件之應用。

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