電阻式記憶體 (RRAM)同時具有讀寫速度快、結構簡單、單元面積小、密度高、低電壓驅動、低耗電、高操作週期及非揮發性等優點，因此近年來許多研究團隊競相投入研發，文獻日益增加，研究的材料也越來越廣泛，從最早的Pr1-xCaxMnO3 (PCMO)到其他的鈣鈦礦材料，以及單元氧化物。然而，ZnO雖然同為常見的單元氧化物材料，卻遲至近兩年才發表純ZnO和摻雜S、Co或Mg的ZnO的RRAM。此外，由於電阻轉換效應的機制尚無定論，因此本研究亦試圖探討電阻轉換效應的原理和機制。
本論文以溶膠-凝膠法 (sol-gel)將Zn1-xMgxO旋鍍於Pt / TiOx / SiO2 / Si基板上，並以濺鍍法鍍製白金上電極，形成MIM結構之電阻式記憶體，分析微結構、電性和介電等特性，探討摻雜Mg以及不同退火溫度對於電阻轉換效應的影響，並探討電阻轉換的過程。實驗結果發現摻雜Mg有助於增加ZnO原始阻態的阻值，使試片可以在更小的膜厚下產生電阻轉換效應，有助元件微小化。退火溫度會影響試片的原始阻態的電阻，然而並不會影響高、低阻態的大小及阻值比。低阻態的電流傳導行為為歐姆傳導，而高阻態的漏電行為為普爾-法蘭克發射。time evolution的量測可進一步做為燈絲理論的證據。

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