本研究以電感耦合式高密度電漿蝕刻機台來研究蝕刻二氧化鉿（HfO2）、矽晶圓蝕刻特性，實驗操作參數為電漿源功率、射頻峰值電壓、氬氣與氯氣混合氣體流量和腔體壓力。研究這些參數對蝕刻率與選擇比的影響與變化。此外，利用射頻阻抗計（Impedance meter），來測量晶圓座上的射頻峰值電壓（RF peak voltage），設計控制器，回授控制射頻峰值電壓，以此參數取代偏壓功率作為研究蝕刻率的變數。以光譜儀量測氯離子、氬原子光譜強度幫助分析蝕刻特性。
氯氣/氬氣含量比例對於二氧化鉿的蝕刻率幾乎不變。在較高的氬氣含量電漿中二氧化鉿蝕刻表面較粗糙，其原因為離子通量較大且化學性蝕刻減弱所影響。
發現在提高的電漿源功率至1000 W選擇比約0.017、射頻峰值電壓至40V選擇比約0.0056、氣體總流量至150 sccm選擇比約0.013與降低的腔體壓力至5 mTorr選擇比約0.02、氬氣含量至0 % 選擇比約0.01，使得相較於矽而言，二氧化鉿對矽的選擇比可提高，但選擇比無法高於1。

The purpose of this research is to study HfO2 and Si etch characteristic in inductivity coupled plasma etcher. Operating parameters are plasma source power, rf peak voltage, Cl2/Ar gas flow rate, and chamber pressure. The influence of those parameters on etch rate and selectivity are investigated., The impedance meter connected to the electrostatic chuck is used to measure rf peak voltage on electrostatic chuck. The controller is designed to feedback control the rf peak voltage, which is used to replace the bias power as the controlled variable. HfO2 etch rate almost does not vary when Ar % is changed. In high Ar % plasma, HfO2 surface has higher roughness, the reason is due to the effect of high ion flux and low chemical reactions.
Increasing plasma source power, rf peak voltage, total gas flow rate and reducing chamber pressure can increase HfO2/Si etch selectivity. However, in Cl2/Ar plasma, the etch selectivity of HfO2/Si can not be higher than 1.

[1] H. S. Momose, M. Ono, T. Yoshitomi, T,Ohguro, S. Makamura, M. Saito, and H. Iwai, IEEE Trans. Electron Devices. vol. 43, pp. 1233-1241 (1996)
[2] Laegu Kang, Byoung Hun Lee, Wen-Jie Qi, Yongjoo Jeon, R. Nieh, S. Gopalan, K. Onishi, J.C. Lee, IEEE Electron Device Letters. vol. 21, pp. 181-183 (2000)
[3] K. J. Hubbard and D. G. Schlom, J. Master. Res., vol.11, pp. 2757-2776 (1996)
[4] G. D. Wilk, and R. M. Wallance, Appl. Phys. Lett., vol. 74, no. 19, pp. 2854-2856 (1999)
[5] Y. Kim, G. Gebara, M. Frelier, J. Barnett, D. Riley, J. Chen, K. Torres, J. E. Lim, B. Foran, F. Shaapur, A. Agarwal, P. Lysaght, G. A. Brown, et., IEDM Tech. Dig., pp. 455-458, (2001)
[6] Shih KK, Chieu TC, Dove DB, J .Vac. Sci. Techol. B 11 (6): 2130-2131 (1993)
[7] Britten JA, Nguyen HT, Falabella SF, et al., J .Vac. Sci. Techol. A 14 (5): 2973-2975 (1996)
[8] Norasetthekul S, Park PY, Baik KH, et al., APPLIED SURFACE SCIENCE 187 (1-2): 75-81 (2002)
[9] Chen JH, Tan KM, Wu N, et al., J .Vac. Sci. Techol. A 21 (4): 1210-1217 (2003)
[10] Sha L, Puthenkovilakam R, Lin YS, et al., J .Vac. Sci. Techol. B 21 (6): 2420-2427 (2003)
[11] Sha L, Chang JP, J .Vac. Sci. Techol. A 22 (1): 88-95 (2004)
[12] Chen JH, Yoo WJ, Chan DSH, et al. ELECTROCHEMICAL AND SOLID STATE LETTERS 7 (3): F18-F20 (2004)
[13] Chen JH, Yoo WJ, Tan ZYL, et al., J .Vac. Sci. Techol. A 22 (4): 1552-1558 (2004)
[14] 林安順，國立清華大學電子工程所碩士論文，（2003）
[15] Paul Werbaneth and John Alrnetico, Solid state technology,87 (2000)
[16] Mutumi Tuda,Kouichi Ono,and Kazuyasu Nishikawa, J.Vac.Sci.Techol. B 14(5),3291 (1996)
[17] Jane P.chang,Arpan P.Mahorowala,and Herbert H. Sawin J.Vac.Sci. Techol. A 16(1),217 (2000)
[18] S. Kleditzsch and U.Riedel , J.Vac. Sci.Techol. A 18(5),2130 (2000)
[19] C.R. Eddy,Jr,D. Leonhartdt,S.R. Douglass,B.D. Thoms,V.A. Shamamian and J.E. Butler ,J .Vac. Sci. Techol. A 17(1),38 (1999)
[20] K.H.A.Bogart and V.M.Donnelly ,J. Appl. Phys.,86 ,1822 (1999)
[21] Hong Xiao, 半導體製程技術導論 羅正中、張鼎張 譯, 歐亞, (2003)
[22] Dennis M. Manos, Daniel L. Flamm, eds., Plasma Etching: An Introduction, Academic, New York (1989)
[23] 雷舜誠，國立清華大學工程與系統科學所碩士論文，（2001）
[24] 張正宏，國立清華大學工程與系統科學系博士論文，(2003)
[25] S. Kleditzsch and U. Riedel , J. Vac. Sci. Technol. A 18(5), (2000)
[26] Robert J. Hoekstra , Michael J. Grapperhaus , and Mark J. Kushner , J. Vac. Sci. Technol. A 15(4), (1997)
[27] Roger Patrick , Scott Baldwin , and Norman Williams , J.Vac. Sci. Technol. A 18(2), (2000)
[28] J.Y. Choe, I.P. Herman, and V.M. Donnelly, J. Vac. Sci. Technol. A 15(6), 3024 (1997)
[29] M.A. Sobolewski, J. Appl. Phys. 90, 2660 (2001).
[30] Robert J. Hoekstra and Mark J. Kushner, J. Appl. Phys., vol.79, p.2275, (1996)
[31] 黎正中 譯， 穩健設計之品質工程， 台北圖書，（1993）
[32] 黎正中、陳源樹 編譯， 實驗設計與分析， 高立，（2003）
[33] 吳文正， 國立清華大學工程與系統科學系碩士論文，(1999)
[34] 徐振斌， 國立清華大學工程與系統科學系碩士論文，(2001)
[35] 曾志偉， 國立清華大學工程與系統科學系碩士論文，(2002)
[36] 黃品勳， 國立清華大學工程與系統科學系碩士論文，(2004)
[37] 蕭凱木， 國立清華大學工程與系統科學系碩士論文，(2004)
[38] M. A. Liberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing (Wiley, 1994).
[39] http://www.veeco.com/default.asp
[40] http://www.sopra-sa.com/
[41] http://www.sitekprocess.com/
[42] 龔茂林， 國立清華大學工程與系統科學系碩士論文，(2003)
[43] N.Hershkowitz and H.L.Maynard, J.Vac. Sci. Technol. A 11(4),1172 (1993)
[44] j.Ding, J.-S.Jenq, G.-H.Kim, H.L.Maynard, J.S.Hamers, N. Hershkowitz and J.W.Taylor, J.Vac. Sci. Technol. A 11(4), 1283 (1993)
[45] J.P.Chang and Herbert H.Sawin, J.Vac. Sci. Technol. A 15(3), 610 (1997)
[46] J.P.Chang, Arpan P.Mahorowala, and Herbert H.Sawin, J.Vac. Sci. Technol. A 16(1), 217 (1998)
[47] C. Lee and M. A. Lieberman, J. Vac. Sci. Technol. A,
vol. 13, pp. 368–380, (1995)
[48] M. V. Malyshev and V. M. Donnelly, J. Appl. Phys., vol. 87, pp.1642–1649, (2000)
[49] Alexander M. Efremov, Dong-Pyo Kim, and Chang-Il Kim,
IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 32, NO. 3, JUNE (2004)
[50] T. Denda, Y. Miyoshi, Y. Komukai, T. Goto, Z. Lj. Petrovic, and T. Makabe, JOURNAL OF APPLIED PHYSICS 95 (3): 870-876 (2004)