在本論文所探討的離子劈裂技術中，係旨於研究以兩階段不同順序的氫與氦離子佈植取代單階段的氫離子佈植，所造成矽（100）試片表面的發泡與發泡破裂現象以及試片內部缺陷的演化情形，並與只有單一階段氫離子佈植的結果進行交互比較。所使用的特性量測分析儀器包括：動態光學顯微分析儀器、拉曼光譜儀、二次離子質譜儀、以及穿透式電子顯微鏡。結果顯示：不同順序的兩階段離子佈植造成不一樣的缺陷分佈情形，也使得在使用特性量測儀器所觀察到的現象大不相同。加入氦離子佈植的試片在經退火後，其試片內部出現有明顯的長條裂縫，此一裂縫的生成是為絕緣體上矽薄膜能否成功轉移的重要關鍵，是以添加氦離子的兩階段離子佈植可以較單階段氫離子佈值提高了製作絕緣體上矽的成功機率。本論文所使用的兩階段氫與氦離子佈值試片經由適當的晶圓接合以及退火製程皆可得到絕緣體上矽結構，其中，氦先佈值（即 He＋H）者其薄膜轉移的面積高於氦後佈值（即 H＋He）者，絕緣體上矽薄膜的表面粗糙度亦是前者優於後者。總結而言，前者為較佳的製程。

[1] M. Bruel, Nucl. Instr. and Meth. B, 108 (1996) 313.
[2] L. J. Huang, Q. Y. Tong, Y. L. Chao, and T. H. Lee,
Appl. Phys. Lett., 74 (1999) 982.
[3] M.K. Weldon, V.E. Marsico, Y.J. Chabal, A. Agarwal,
D.J. Eaglesham, J. Sapjeta, W.L. Brown, D.C. Jacobson,
Y. Caudano, S.B. Christman, E.E. Chaban, J. Vac. Sci.
Technol., B15 (1997) 1065.
[4] J. Grisolia, G.B. Assayag, A. Claverie, B. Aspar, C.
Lagahe, and L. Laanab, Ap pl. Phys. Lett. 76,
(2000) 852.
[5] A. Agarwal, T. E. Haynes, V. C. Venezia, O. W. Holland,
and D. J. Eaglesham, Appl. Phys. Lett. 72, 1086 (1998).
[6] M.K. Weldon, M.Collot, Y.J.Chabal, V.C. Venezia, A.
Agarwal, T.E. Haynes, D.J. Eaglesham, S.B. Christman,
and E.E. Chaban, Appl. Phys. Lett. 73 (1998) 3721.
[7] C. L. Blanchard, N. Sousbie, S. Sartori, H. Moriceau,
A. Sousbie, B. Aspar, P. Nguyen, and B. Blondeau,
Proceedings on the Semiconductor wafer Bonding VII:
Science, Technology, and Application, Paris, France,
Vol. PV2003–19, 27 (2003) 346.
[8] P. Nguyen, I. Cayrefourcq, B. Blondeau, N. Sousbie, C.
L. Blanchard, S. Sartori, and A. M. Cartier,
Proceedings of the 2003 IEEE International SOI
Conference, Newport Beach, CA, 29 (2003) 132.
[9] J. P. Colinge, Silicon On Insulator Technology:Material
to VLSI, (2004).
[10] H.J. Woo, H.W. Choi, J.K. Kim, G.D. Kim, W. Hong, W.B.
Choi and Y.H. Baec，Nucl. Instr. and Meth. B, 241
(2005) 531.
[11] A. Plossl and G. Krauter, Soloid-State Electron., 44
(2000) 775.
[12] 施敏, Semiconductor Devices Physics And Technology 2nd
edition , (2001) 132.
[13] L. Jastrzebski, J. F. Corboy, J. T. McGinn, and R.
Pagliaro, Jr., J. Electrochem. Soc.:SOLID-STATE
SCIENCE AND TECHNOLOGY, 130 (1983) 1571.
[14] R. P. Zingg, H. G. Graf, W. Appel, P. Vohringer and B.
Hofflinger, Institute for Microelectronics (1988) 52.
[15] J. P. Denton and G. W. Neudeck, Int. IEEE SOI Conf.
Proc., (1995) 135.
[16] J. C. Chang, J. P. Denton, and G. W. Neudeck, Int.
IEEE SOI Conf. Proc., (1996) 88.
[17] Q.Y. Tong and U. Gosele, Semiconductor Wafer Bonding:
Science and Technology, Wiley Publishing Company,
London, (1999) 137.
[18] M Watanabe and A. Tooi, Japan. J. Appl. Phys, 5 (1966)
737.
[19] K. Izumi, M. Doken and H. Ariyoshi, Electron. Lett.,
14 (1978) 593.
[20] S. Nakoshima, T. Katayama, Y. Miyamura, H. Matsuzaki,
and M. Imai, et al., Int. IEEE SOI Conf. Proc., MA,
(1994) 71.
[21] T. Yonehara, K. Sakaguchi, and N. Sato, Appl. Phys.
Lett., (1994) 64.
[22] SOI wafers based on epitaxial technology, Solid-State
Techno., June (2000) 88.
[23] K. Sakaguchi, K. Yanagita, H. Kurisu, H. Suzuki, K.
Ohmi and T. Yonehara, Int. IEEE SOI Conf. Proc.,
(1999) 110.
[24] M. Bruel, Electron. Lett., 31. 1201(1995).
[25] X. Duo, W. Liu, S. Xing, M. Zhang, X. Fu, C. Lin, P.
Hu, S. X. Wang, and L. M. Wang, J. Phys. D: Appl.
Phys. 34 (2001) 5–11.
[26] J. F. Ziegler, J.P. Biersack and U. Littmask, stopping
and Range of ions in Solids, 1, Pergamon Press (1985)
202.
[27] 王孟亮，拉曼小傳，科學月刊167期，958頁。
[28] Z. C. Feng, A. A. Allerman, P. A. Barnes, and S.
Perkowitz, Appl. Phys. Lett., 60 (1992) 1848.
[29] J. P. Estrera, P. D. Stevens, R. Glosser, W. M.
Duncan, Y. C. Kao, Y. H. Liu, and E. A. Beam, Appl.
Phys. Lett., 61 (1992) 1927.
[30] G. Lucovsky, M. H. Brodsky, M. F. Chen, R. J.
Chicotka, and A. T. Ward, Phys. Rev., B4 (1971) 1945.
[31] K. J. Yano, and T. Katoda, J. Appl. Phys., 70 (1991)
7036.
[32] D. P. Bour, J. R. Shealy, A. Ksendzov, and F. Pollak,
J. Appl. Phys., 64 (1988) 6456.
[33] 蘇青森，儀器學，五南圖書出版股份有限公司，(2002) 76。
[34] G. E. Jellison, Jr. and F. A. Modine, J. Appl. Phys.,
76 (1994) 3758.
[35] A. Benninghoven, F. G. Rudenauer, and H. W. Werner,
Secondary Ion Mass Spectrometry: Basic Concepts,
Instrumental Aspects, applications and Trends, John
Wiley & Sons (1987) 950.
[36] 陳力俊、張立、梁鉅銘、林又台、楊哲人、鄭晃忠，材料電
子顯微鏡學，科儀叢書 3，國家科學委員會精密儀器發展
中心，（1994）。
[37] F. A. Reboredo, M. Ferconi, and S. T. Pantelides,
Phys. Rev. Lett. 82 (1999) 4870.
[38] Q. Y. Tong, K. Gutjahr, S. Hopfe, U. Go¨sele, and
T.H. Lee, Appl. Phys.Lett. 70, 1390 (1997).
[39] Moutanabbir, and B. Terreault, J. Chem. Phys., 121
(2004) 7973.
[40] B. B. Nielsen, L. Hoffmann, and M. Budde, Mater. Sci.
Eng., B36 (1996) 259.
[41] H. J. Stein, S. M. Myers, and D.M. Follstaedt, J.
Appl. Phys., 73 (1993) 2755.
[42] R. Job, A.G. Ulyashin, W.R. Fahrner, A.I. Ivanov, and
L. Palmetshofer, Appl. Phys. A 72 (2001) 325.
[43] S. M. Myers, D. M. Follstaedt, H.J. Stein, and W.R.
Wampler, Phys. Rev., B47 (1993) 13380.
[44] Y. J. Chabal, M. K. Weldon, Y. Caudano, B. B.
Stefanov, and K. Raghvachari, Physica B, 273 (1999)
152.
[45] O. Moutanabbir, B. Terreault, M. Chicoinec, P.J.
Simpsond, T. Zahele, and G. Hobler, Physica, B376
(2006) 36.
[46] K. P. Jain, A. K. Shukla, R. Ashokan, S. C. Abbi, and
M. Balkanski, Phys. Rev. B32 (1985) 6688.
[47] A. Othonos, C. Christofides, J. B. Said, and M.
Bisson, J. Appl. Phy. 75 (1994) 8032.
[48] A.J. Pitera, and E.A. Fitzgerald, J. Appl. Phys. 97
(2005) 104511.
[49] A. A. Valladares, A. Valladares, R.M. Valladares, and
A. G. Calles, Mater. Res. Soc. Symp. Proc., 971 (2007)
Z07-8.
[50] J. H. Liang, C. Y. Bai,D. S. Chao, C. M. Lin, Nucl.
Instr. Meth. B 266 (2008) 1349-1355.
[51] J. H. Liang, C. Y. Bai,D. S. Chao, C. M. Lin, Nucl.
Instr. Meth. B 266 (2008) 1562-1568.
[52] T. Hochbauer, A. Misra, R. Verda, Y. Zheng, S.S. Lau,
J.W. Mayer, and M. Nastasi, Nucl. Instr. Meth. B 175
-177 (2001) 169.
[53] Y. Zheng, S. S. Lau, T. Hochbauer, A. Misra, R. Verda,
X.-M. He, M. Nastasi, and J. W. Mayer, J. Appl. Phys.,
89 (2001) 2972.
[54] M. Bruel, MRS Bull. 23, (1998) 35.
[55] M. Levy, R. M. Osgood, R. Liu, L. E. Cross, G. S.
Cargill III, A. Kumar, and H. Bakhru, Appl. Phys.
Lett., 73 (1998) 2293.
[56] C. Qian, and B. Terreault, J. Appl. Phys., 90 (2001)
5152.