有機垂直型電晶體操作區域與溫度的影響將會在這篇文章中被討論，有機垂直型電晶體的操作區域隨著溫度下降由飽和變成調制，可以觀察到電晶體的特是主要是由射極注入集極的電流所主導，大部分的電流主要從射極-基極二極體產生，藉由分析主宰電流的射極-基極二極體和基本的有機半導體的傳輸機制，能觀察到在高溫與低溫下是由不同的傳輸機制所主導，藉由不同的傳輸機制可以解釋溫度由高溫到低溫操作區域由飽和變成調制的現象。

Temperature dependence of operation region for organic vertical-type transistors would be discussed in this article. The operation region of organic vertical-type transistors change from saturation to modulation when the temperature decreasing. It is observed the current injected form emitter to collector dominated performance. Most of the current was produced by emitter-base diode. By analyzing emitter-base diode which dominated the performance of devices and the basic organic transport mechanism, it is observed that different transport mechanism dominated at high and low temperature. The change of saturation to modulation can be explained by different transport mechanism dominated at high and low temperature.

[1] Gerwin Gelinck, Paul Heremans, Kazumasa Nomoto, and Thomas D. Anthopoulos, Adv.Mater. 2010, 22, 3778

[2] D.J Monsma, J. C. Lodder, T. J. A. Popma, and B. Dieny, Phys, Rev. Lett. 1995, 74, 5260

[3] F. Eder, H. Klauk, M. Halik, U. Zschieschang, G. Schmid, and C. Dehm. Appl. Phys. Lett. 2004, 84, 2673

[4] C. J. Drury, C. M. J. Mutsaers, C. M. Hart, M. Matters, and D. M. deLeeuw, Appl. Phys. Lett. 1998, 73, 108

[5] C. D. Dimitrakopoulos and Patrick R. L. Malenfant, Adv. Matt. 2002, 14, 99

[6] Antonio Facchetti, materialstoday 2007, 10, 28

[7] Robert A. Street, Adv. Mater. 2009, 21, 1
[8] P. G. Le Comber ane W. E. Spear, Phys. Rev. Lett. 1970, 25, 509

[9] Gilles Horowitz, Adv.Mater. 1998, 10, 365

[10] M. A. Lampert, and P. Mark,“Current Injection in Solids”, Academic Press, New York, 1970

[11] M. Pope, and C. E. Swenberg,“Electuonic processes in organic crystals and polymers”, Oxford University Press, Oxford, 1999.

[12] N. F. Mott, and T. W. Gurney, “Electronic processes in ionic crystals, Clarendon Press”, Oxford, 1940.

[13] P. W. M. Blom, M. J. M. de Jong, and M. G. van Munster, Phys. Rev. B, 1997, 55, 656

[14] Xianfeng Qiao, Jiangshan Chen and Dongge Ma, J. Phys. D: Appl. Phys. 2010, 43, 215402

[15] M. M. Mandoc, B. de Boer, and P. W. M. Blom, Phys. Rev. B, 2006, 73, 155205

[16] P. E. Burrows, Z. Shen, V. Bulovic, D. M. McCarty, and S. R. Forrest, J. Appl. Phys., 1996, 79, 7991

[17] Haichuan Mu, David Klotzkin, Ajith de Silva, Hans Peter Wagner, Dan White and Buck Sharpton, J. Phys. D: Appl. Phys. 2008, 41, 235109

[18] Zilan Shen, Paul E. Burrows, Vladimir Bulovic, Dennis M. McCarty, Mark E. Thompson and Stephen R. Forrest, Jpn. J. Appl. Phys. 1996, 35, 401

[19] S. R. Forrest, J. Am. Chem. Soc. 97, 1793 (1997).

[20] R. Schlesser,” Organic electro-optic crystals and thin films: optical characterization and molecular bean epitaxy”, PhD thesis, ETH Zurich 1996.
[21] S. R. Forrest, J. Am. Chem. Soc. 97, 1793 (1997).

[22] D. L. Smith, “Thin-Film Deposition: Principle and Practice”, McGraw-Hill, New York, 1995.

[23] Shiau-Shin Cheng, Jia-Hao Chen, Guan-Yuan Chen, Dhananjay Kekuda, Meng-Chyi Wu, Chih-Wei Chu, Orgnaic Elictronics, 2009, 10, 1636

[24] Hajime Nakanotani and Chihaya Adachi, Appl. Phys. Lett. 2010, 96, 053301

[25] Jeremy Smith, Richard Hamilton, Yabing Qi, Antoine Kahn, Donal D. C.Bradley,Martin,Heeney,Iain McCulloch, and Thoma D.Anthopoulos, Adv.Funct.Mater. 2010, 20 ,2330

[26] Gilles Horowitz, Mohsen E. Hajlaoui, and Riadh Hajlaoui, J. Appl. Phys. 2000, 87, 4456