本研究以奈米Ni粉與銀膠配製而成的催化劑漿料網印於玻璃基板上，在500℃低溫條件下製備碳管以做為場發射陰極材料。適當的催化劑濃度可增加製備的成功率與提升場發射性質，而過高的催化劑濃度使得陰極於碳管成長過程中因體積膨脹導致脫落，過低的催化劑濃度使得陰極上的碳管覆蓋率過低而降低其場發射密度。
垂直碳管製程以Co/Ti為二元催化金屬，可在低溫(450℃)下於玻璃基板上或矽基板上製備垂直排列的奈米碳管陣列，Co/Ti催化劑的配比與基板的選擇對於碳管的最終成長高度影響頗深；純Co催化劑無法於低溫下直接成長出碳管，過高的Ti含量也無法在低溫下長出垂直碳管。矽基板於高溫(700℃)處理下容易與催化劑反應使催化劑活性降低而無法長出垂直碳管，此問題可以用兩階段控溫製程來避免催化劑受基板的毒化作用。此外，為了在微米級週期結構的表面上成長垂直奈米碳管陣列，在不同尺寸的PS球陣列上鍍製催化劑，實驗中發現，在Co/Ti的系統中以3 nm/3 nm的厚度比例是可以用在微米級的週期結構中。
轉印製程的研究分為硬式基板與軟性基板轉印法，以銀膠為轉印媒介適用於以硬式耐溫基板轉印高於20微米的奈米碳管陣列，可以轉印複雜的垂直碳管圖案，經轉印後碳管頂端結構為開口狀，適用於製作高電流密度之場發射陰極材料。另外開發軟性基板的轉印製程，可轉印5微米高度的垂直碳管陣列，轉印後圖案可以保持不變且線寬可小至5微米，於撓曲情況下仍具有場發射性質，且具有彎曲應變規的功能。
以自組裝奈米球為遮罩的微影製程經由使用毒化層的方式得到改善，可用以製作大面積且均勻的碳管週期陣列，由於陣列週期在可見光波長範圍因此表現出與可見光的繞射效果，此外由Si模光柵圖形化的製程可將碳管陣列轉印至軟性基板上，週期圖案可達到350 nm的尺度，結構週期與光譜分析符合射繞理論，利用此碳管陣列光柵可在視覺上達到全黑至彩光的效果。

In this work, Ni nanopowder mixed with commercial Ag-paste was screen-printed on glass substrate, and then growth of carbon nanotubes (CNTs) was performed in a chemical vapour deposition (CVD) chamber at 500 °C for fabricating field emitters. The proper concentration of catalyst enables to the successful production of cathode and enhances the field emission properties. However, higher catalyst concentration results in the cathode peeling off due to the volume expansion during the growth of CNT and lower catalyst concentration results of decrease in the emission sites due to the poor CNT coverage.
The growth of vertically aligned CNT (VA-CNT) on glass substrate at a low temperature of 450°C was demonstrated using Co/Ti bimetallic catalyst. It was found that the ratio of Co/Ti and the selection of substrate influence the CNT length; CNTs can not grow on glass substrate at lower temperature when pure Co layer or catalyst layer with excess Ti content was used. Si substrate reacts easily with catalyst under higher temperature (700°C), which decreases the catalyst activity and fails to grow VA-CNT. To overcome this problem, a two-step process was proposed which can prevent the catalyst from poisoning during CNT synthesis. Moreover, in order to grow VA-CNT array on the surface of micro-scale periodic structures, the catalyst was coated on the array composed of PS spheres with different sizes. It was found that the Co/Ti catalyst system with the ratio of 3 nm/3 nm in thickness could be used in micro-scale periodic structures.
The study of transfer process can be categorized into two sorts, one is for hard substrate and the other is for soft substrate. For transferring complicated VA-CNT pattern with a height higher than 20 □m onto a hard substrate, silver paste was adopted as transfer medium. After the transfer process, the CNTs with open-end structure fit them to fabricate the field emitter for the high current density applications. A direct transfer method was developed for transferring VA-CNT with height of about 5 □m onto soft substrate. After the transfer process, the VA-CNTs maintained their initial orientation in the designed pattern and showed the pattern even the line width is about 5 □m. The flexible device showed excellent emission performance even if under bending condition and exhibited the function of strain gauge for bending.
A self-assembly nano sphere lithography (NSL) mask for the fabrication of periodic CNT arrays was improved by adopting a catalyst-poisoning layer. Using this method, the uniformity of the CNT array could be improved by preventing the negative influence of arrangement defects in self-assembled monolayers. CNT array exhibited the diffraction of visible light due to the size and period within the wavelength scale. In addition, the process with Si mold for patterning a grating was capable of transferring CNT array onto flexible substrate. The periodic pattern could be in the scale of 350 nm. The structure period and spectra analysis match the diffraction theory. The vision from dark to iridescence was obtained by using the CNT grating.

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