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研究生: 陳彥州
Yan-Jou Chen
論文名稱: 快閃記憶體寫入暨抹除方法改善與模擬分析
Improvement and Simulation Analysis of Programming and Erasing Methods for Flash Memory Cells
指導教授: 張廖貴術
Kuei-Shu Chang-Liao
口試委員:
學位類別: 碩士
Master
系所名稱: 原子科學院 - 工程與系統科學系
Department of Engineering and System Science
論文出版年: 2005
畢業學年度: 93
語文別: 中文
論文頁數: 100
中文關鍵詞: 快閃記憶體寫入抹除新方法
外文關鍵詞: FLASH, memory, programming, erasing
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  • 本篇論文主要分為寫入與抹除兩部份來討論。
    寫入重點放在新方法的最佳化與改良,主要是利用源極和汲極做入射與收集動作,以期操作偏壓可以下降但卻仍保有一定速度,但這種方法缺點在於需要一個額外的外部電路提供所需的入射與收集的波形。分別比較速度,可靠度等電性量測及分析,再者用2D元件模擬軟體Medici作一驗証,了解此法運作的過程與物理機制。
    至於抹除方面則是著重於穿隧效應所帶來影響的討論,與元件不對稱對抹除速度、可度的作用,以期找到更快更合適的抹除方法與條件。


    摘要………………………………………………………………… a 致謝………………………………………………………………… b 目錄………………………………………………………………… c 圖目錄……………………………………………………………… f 第一章 緒論……………………………………………………… 1 1.1 引言:記憶體漫談……………………………………… 1 1.2 章節簡介………………………………………………… 2 第二章 快閃記憶體結構及基礎原理概說……………………… 4 2.1 快閃記憶體的結構…………………………………….… 4 2.2 寫入與抹除機制(programming/erasing mechanisms)…… 6 2.3 可靠度分析……………………………………………… 10 2.3.1 閘極導致汲極漏電(GIDL) ……………………….. 10 2.3.2 耐力(Endurance) ………………………………… 13 2.3.3 量測GIDL計算介面陷入電荷…………………….. 15 2.3.4 干擾(Disturbance)………………………………… 17 2.4 其它重要電性量測……………………………………… 21 2.4.1 body effect………………………………………… 21 2.4.2 快閃記憶體及Dummy結構的次起始特性……… 22 第三章 快閃記憶體基礎量……………………………………… 23 3.1 元件CHEI寫入偏壓的找尋……………………………. 23 3.2 寫入後穿隧氧化層中陷入電荷的測量………………… 26 3.3 元件F-N抹除偏壓的找尋……………………………….. 27 3.4 High-k flash 與 傳統flash元件可靠度的比較………… 29 3.4.1 耐力(Endurance)………………………………… 29 3.4.2 漏電(Retention)………………………………… 30 3.4.3 干擾(Disturbance)……………………………… 32 第四章 快閃記憶體寫入方法的發展與改善…………………… 34 4.1研究動機與PASHEI的優缺點…………………………… 34 4.2 波形的產生與最佳化…………………………………… 35 4.2.1 波形的產生……………………………………… 36 4.2.2 波形各參數的最佳化…………………………… 37 4.3 PASHEI的改良………………………………………… 48 4.4 PASHEI改良後速度與功率消耗的比較……………… 51 4.5 Medici模擬驗証………………………………………… 57 4.6 結論……………………………………………………… 65 第五章 不同偏壓組合抹除方法的比較………………………… 66 5.1 抹除時帶對帶穿隧的影響……………………………… 66 5.2 耦合係數的影響………………………………………… 70 5.3 可靠度…………………………………………………… 76 5.4汲極抹除………………………………………………… 81 5.5 可靠度改善……………………………………………… 88 5.6 結論……………………………………………………… 94 第六章 結論與建議……………………………………………… 96 參考文獻…………………………………………………………… 98

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