應用萃思工具解決封裝元件導線架脫層問題｜國立清華大學博碩士論文庫

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研究生：	郭宇智 Yu -Chih Kuo
論文名稱：	應用萃思工具解決封裝元件導線架脫層問題 Using TRIZ to Solve Lead Frame Delamination in Component Package
指導教授：	許棟樑 D. Daniel Sheu
口試委員:
學位類別：	碩士 Master
系所名稱：	工學院 - 工業工程與工程管理學系碩士在職專班 Industrial Engineering and Engineering Management
論文出版年：	2008
畢業學年度：	96
語文別：	中文
論文頁數：	67
中文關鍵詞：	萃思、封裝、脫層、發明原則
外文關鍵詞：	TRIZ, Package, Delamination, Inventive Principles
相關次數：	點閱：3 下載：0
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脫層(Delamination)在導線架型封裝元件是重要的可靠度問題。J-STD-020D的濕度敏感度水準-3等級(Moisture Sensitivity Level 3，MSL-3)的可靠度測試是為了客戶或表面黏著廠，應用於電路面板或組裝環境的考量，這暗示通過MSL-3的半導體元件在防濕包裝拆封後，肯定可以適應在300C /60% RH/168小時生產環境。本研究是應用TRIZ理論中，定義問題的功能屬性分析法，來探討模壓過程２的合模預熱、注膠固化、開模頂出所產生有害或不足的功能。整合矛盾矩陣中的39工程參數、40個發明原則及分離原則、物質-場分析的76個標準解所產生的概念，將概念具體化並應用在導線架封裝型態上。首先，確認目前改良後的產品是否有脫層，再根據前JEDEC-MSL-3做為測試條件，來確認是否通過MSL-3；最後，則評估各個改良階段對於減少脫層的貢獻度。其研究成果如下:1.在概念化設計中應用的發明原則39.鈍性環境、24.中介物、3.局部品質、14.曲度、30.彈性薄膜、分離原則的空間分離、物質-場分析的76個標準解。2.SOT223封裝元件通過 JEDEC-MSL-3。3.有效的改善導線型封裝元件脫層現象。

Delamination of package for lead frame type is an important reliability problem.Joint Electron Device Engineering Council (J-STD-020D) Moisture Sensitivity Level3of reliability test is for customer or surface-mount
technology (SMT) to apply at board level or in module assembly. This implies that the floor life of Level 3 components can be guaranteed for 168 h under a 300C and 60% RH production environment after opening a dry pack. In this study, applied function attribute analysis of TRIZ problem-define methods to research clamping preheating, transfer molding, open mold and ejection that brought harmful or insufficient functions in the molding process.The
integration of contradiction matrix, 39 engineering parameter, 40 inventive principles, and separation strategies, substance-field analysis 76 standard solutions generating concepts and applies to the lead frame package type. At first, to verify IC whether it is delaminated after conceptual design, then base on JEDEC-MSL-3 test condition to confirm whether it pass MSL-3. Finally, to estimate each stage of contribute which can reduce delamination. The research results were as bellows:
1.The concepts design of these process relate to the Inventive Principles which includes 39.Inert Atmosphere, 24.Intermediary, 3.Local Quality, 14. Spheroidality- Curvature, 30.Flexible shells and thin films, separation strategies in space,76 standard solutions of substance-field analysis.
2.The package component of SOT223 passes JEDEC-MSL-3.
3.The idea were effective to improve delamination of package component for lead frame.

摘要....................................................I
Abstract...............................................II
誌謝...................................................IV
目錄....................................................V
圖目錄................................................VII
表目錄..................................................X

第一章 緒論.............................................1
1.1 研究背景與動機......................................1
1.2 研究目的............................................2
1.3 研究範圍與限制......................................2
1.4 研究方法............................................3
第二章 文獻探討.........................................4
2.1 IC封裝製程..........................................4
2.2 脫層問題............................................9
2.3 TRIZ理論...........................................10
2.3.1 TRIZ矛盾問題.....................................12
2.3.2 技術矛盾.........................................13
2.3.3 物理矛盾.........................................14
2.3.4 物質－場模型分析.................................14
2.3.5 物質－場分析76個標準解...........................17
2.4 TRIZ在半導體產業的應用.............................18
第三章  模壓製程問題定義與解決方法.....................20
3.1 模壓製程簡述.......................................22
3.2 脫層型式...........................................22
3.3 模壓製程功能屬性分析...............................23
3.3.1 合模預熱－影響膠體結合力發生在壓模轉注之前.......24
3.3.2 注膠固化－影響膠體結合力發生在壓模轉注之前.......26
3.3.3 開模頂出－影響膠體結合力發生在壓模轉注之後.......28
3.4 技術、物理矛盾推論與物質－場分析方法找出可行解.....30
3.4.1 合模預熱之技術、物理矛盾推論.....................30
3.4.2 合模預熱之物質－場分析...........................32
3.4.3 注膠固化之技術、物理矛盾推論.....................33
3.4.4 注膠固化之物質－場分析...........................35
3.4.5 開模頂出之技術、物理矛盾推論.....................36
3.4.6 開模頂出之物質－場分析...........................38
3.4.7 彙整技術、物理矛盾推論與物質－場分析方法之可行解.40
第四章　概念化設計.....................................43
4.1 合模預熱概念具體化.................................43
4.2 注膠固化概念具體化.................................44
4.3 開模頂出概念具體化.................................45
第五章  個案分析.......................................48
5.1 實際應用在封裝元件.................................48
5.2 JEDEC-MSL-3測試條件................................50
5.3 改善度分析.........................................53
第六章  結論...........................................55
參考文獻...............................................56
附錄一：矛盾矩陣表.....................................59
附錄二：40個發明原理與解釋之中文釋義...................65

                                

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