中文摘要
本研究係在多晶鑽石表面和微米級多晶鑽石薄膜上蝕刻出奈米級鑽石針尖結構研發其場發射特性。本研究利用微波電漿輔助化學沉積的氧氣電漿來蝕刻拋光及未拋光的P-型多晶硼參雜鑽石膜，製作出鑽石奈米管林，電源供應器為射頻(RF)電源供應器輸入100W的能量，進行物理性蝕刻，再利用微波電漿輔助化學沉積的氬氣電漿改質處理，去量測不同處理時間下，奈米鑽石管的場發射特性。
實驗結果顯示，氬氣電漿處理四分鐘後的拋光鑽石膜及未拋光鑽石膜所蝕刻而成的奈米鑽石管林，皆展現優良的場發特性，拋光的試片所蝕刻出來的奈米鑽石管林可將啟動電場降至4.4(V/um)且電流密度維持在15-20 mA/cm2 at8.1V/um，未拋光部分經氬氣處理4mins下的場發特性，具有低啟動電場(5V/um)及高電流密度(7.6 mA/cm2 at 8.6 V/um )的特性，利用場發射電子顯微鏡(FE-SEM)觀看經過處理後的鑽石奈米管林的形貌，隨著處理時間的增長，奈米鑽石管端的形貌無明顯差異，而鑽石品質卻隨著處理時間增長而下降。
研究顯示，經過氬氣電漿處理的奈米鑽石管，不僅降低啟動電場，也明顯的增加電流密度，由此推論場發射特性的提升和氬氣電漿處理造成的形貌及SP3鍵結破壞及所產生的缺陷是相關的。

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