本篇論文研究主題為利用分子束磊晶法(MBE)成長出高品質氮化銦薄膜以及氮化銦量子點，並分析其特性。在氮化銦薄膜方面，我們在Si(111)基板上成長出高品質單晶且為二維成長之氮化銦薄膜，並利用反射式高能量電子繞射系統(RHEED)在成長時做現場監控以判斷薄膜之成長好壞，成長完之樣品，我們利用原子力顯微鏡(AFM)做表面形貌之掃描，並利用X光繞射(X-ray diffraction)以及拉曼光譄(Raman spectrum)量測以確定薄膜之結構與特性與結晶品質。我們以霍爾量測(Hall measurement)決定氮化銦薄膜內的載子遷移率以及載子濃度，諸多量測均確定了我們成長出之氮化銦薄膜有良好的品質。論文內也討論利用不同緩衝層所成長出之氮化銦薄膜，並比較兩者之間的特性有何不同(表面形貌、結構特性、電性、極性等)；而利用光致激發螢光光譜量測(photoluminescence spectrum)實驗則確定了氮化銦薄膜的基本能隙值應位於~0.7 eV附近，這個值與以往被認定的值(1.8-2.0 eV)有很大的出入，文中也討論造成此不同的發光波段的成因。
　　對於氮化銦量子點的研究，我們利用了兩種不同成長方式：Stranski-Krostanov成長模式與熱退火成長模式，能成長出密度可調的氮化銦量子點，文中將研究不同的成長方法對量子點大小及其分布的影響。

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