研究生: |
曾子桄 Tseng Tzu-Kuang |
---|---|
論文名稱: |
化學液相法(Chemical solution deposition)製備 之BaPbO3氧化物薄膜電極 BaPbO3 thin film prepared by Chemical solution deposition method |
指導教授: | 吳振名 |
口試委員: | |
學位類別: |
碩士 Master |
系所名稱: |
工學院 - 材料科學工程學系 Materials Science and Engineering |
論文出版年: | 2004 |
畢業學年度: | 92 |
語文別: | 中文 |
論文頁數: | 93 |
中文關鍵詞: | BaPbO3薄膜 、化學液相鍍膜法 、Pb1.05(Zr0.53Ti0.47)O3 、電阻率 、氧化物電極 、鐵電性 |
外文關鍵詞: | BaPbO3 thin film, Chemical solution deposition, Pb1.05(Zr0.53Ti0.47)O3, electric resistivity, oxide electrode, ferroelectricity |
相關次數: | 點閱:3 下載:0 |
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摘要
本研究利用化學液相鍍膜法(Chemical solution deposition),以醋酸為溶劑,製備BaPbO3薄膜(簡稱BPO),旋鍍在各種基板上,探討其高溫穩定性、表面微結構之差異:在SiO2/Si基板上,650oC以上BPO相消失。在Pt/Ti/SiO2/Si基板上,750oC以上BPO相消失。在Pt/TiN/Ti/SiO2/Si基板上,會有BaCO3雜相,750oC以上BPO相消失。在Pt/Ta/Si3N4/Si上,在高溫時BPO會與Ta反應成Ba2Ta2O7。除此之外,藉著鉛過量及添加其它元素,改善BPO薄膜之性質,發現鉛過量30%在白金鉭基板上,有助於BPO成相,對於白金鈦基板則否;添加Zn或Bi則可改善BPO薄膜微結構的緻密度及平整度。BPO薄膜的電阻率大約在2.5~3.5*10-5Ω.cm左右。
利用研究的BaPbO3薄膜作為Pb1.05(Zr0.53Ti0.47)O3的氧化物電極,與使用白金作為下電極的PZT比較兩者電性之差異。實驗結果顯示,以BPO作為PZT的氧化物電極,可降低PZT的結晶溫度,減少rosette微結構產生,提高殘存極化值和抗疲勞性。我們認為化學液相鍍膜法所製備的BPO薄膜,在鐵電材料的氧化物電極應用上,有極大的潛力。
參考資料
1. J.F. Scott, C.A.P.de Araujo, L.D. McMillan, H. Yoshimori, H. Watanabe, T. Mihara, M. Azuma, T. Ueda, Tetsuk Ueda, D. Ueda, and G. Kano, “Ferroelectric Thin Film in Integrated Microelectronic Devices”, Ferroelectrics , 133(1992), p.47
2. G. H.Haerting, “Ferroelectric Thin Film for Electronic Applications”, J. Vac. Sci. Technol., A9 (3)(1991), p.414
3. L.M. “Advances in Processing of Ferroelectric Thin Film”, Sheppard, Ceramic Bulletin, 71(1) (1992), p.85
4. M. Sayer and K. Sreenivas, “Ceramic Thin Film:Fabrication and Applications”, Science 247(1990), p. 1056
5. 林諭男, “強介電陶磁薄膜的應用”,工業材料,107(1995), p.49
6. T. Mihara, H .Watanabe, and C. A. P. de Araujo, “Evaluation of Imprint Properties in Sol-Gel Ferroelectric Pb(ZrTi)O3 Thin-Film Capacitors”, Jpn. J. Appl. Phys.,32(9B)(1993), p. 4168
7. I. K. Yoo, S. B. Desu, and J. Xing, ”Correlations among Degradations Lead Zirconate Titanate Thin Film Capacitors “, Mater. Res. Soc. Symp. Proc. Vol. 310 (1993), p. 165.
8. Y. T. Kim and C. W. Lee, “Advantages of RuOx Bottom Electrode in the Dielectric and Leakage Characteristics of (Ba,Sr)TiO 3 Capacitor”, Jpn. J. Appl. Phys., 35 (1996), p. 6153
9. H. N. A. Shareef, K. D. Gifford, S. H. Rou, P. D. Hren, O. Auciello and A. I. Kingon,“Electrodes for Ferroelectric thin films ” Integrated Ferroelectrics, 5(1993) , p.321
10.Carlos Paz De Araujo, James F. Scott and George W. Taylor, “Ferroelectric Thin Films: Synthesis and Basic Properties ” ,(Gordon and Breach Publishers, 1996) p.193-194
11. E. A. Kneer , D. P. Birnie , R. D. Schrimpf , J. C. Podlesny , and G. Teowee , “Investigation of surface-roughness and hillock formation on platinized substrates used for Pt/PZT/Pt capacitor Fabrication”, Integrated Ferroelectrics ,7(1995) ,p.61
12. K. Sreenivas , I. Reaney , T. Maeder , and N. Setter , “ Investigation of Pt/Ti bilayer metallization on silicon for ferroelectric thin film integration”, J. Appl. Phys., 75(1)(1994) , p.232
13. R. Bruchhaus , D. Pitzer, O. Eibl,U. Scheithauer, and W. Hoesler, Mater. Res. Soc. Symp. Proc. , 243(1992), p. 123
14. T. Ogawa, S. Shindou, A. Senda and T. Kasanami, Mater. Res. Soc. Symp. Proc., 243(1992), p. 93
15. K. B. Lee, B. R. Rhee and S. K. Cho, Mater. Res. Soc. Symp. Proc., 433 (1996), p. 181
16 .P. Revesz, J. Li, N. Szabo Jr., J. W. Mayer, D. Caudillo and E. R. Mayers, Mater. Res. Soc. Symp. Proc., 243 (1992), p. 101
17. D. Barrow, C. V. R. V. Kumar, R. Pasual and M. Sayer, Mater. Res. Soc. Symp. Proc., 243 (1992), p. 113
18. W. J. D. Bonte, J. M. Poate, C. M. Smith and R. A. Levesque, “Thin-film interdiffusion. II. Ti-Rh, Ti-Pt, Ti-Rh-Au, and Ti-Au-Rh”, J. Appl. Phys., 46 (1975), p. 4284
19. R. N. Singh and E. F. Koch, “TEM study of interdiffusion and interfaces in molybdenum/palladium/silicon thin films”, J. Electrochem. Soc., 133(1986), p. 1191
20. T. E. Clark, “Response surface modeling of high pressure chemical vapor deposited blanket tungsten”, J. Vac. Sci. & Tech., B9(1991), p. 1478
21. R. Hoppe and K. Blinne, Z. Anorg. Allg. Chem., 293 (1958), p. 251
22. G. Wagner and H. Binder, Z. Anorg. Allg. Chem., 297,(1958), p. 328
23. G. Wagner and H. Binder, Z. Anorg. Allg. Chem., 298(1959), p. 12
24. R. Weiss, C. R. Acad. Sci., 246 (1958), p. 3073
25. T. Nitta, K. Nagase, S. Hayakawa and Y. Iida, J. Am. Ceram. Soc., 48(1965), p. 642
26. H. Ikushima and S. Hayakawa, Solid-State Electron., 9 (1966), p. 921
27. R. D. Shannon and P. E. Bierstedt, J. Am. Ceram. Soc., 53(1970), p. 635
.
28. A. W. Sleight, J. L. Gillson and P. E. Bierstedt,” High-temperature superconductivity in the barium plumbate bismuthate (BaPb1-xBixO3) systems.”, Solid State Commun., 17 (1975), p. 27
29. M. Kuwabara , S. Takahashi, ”Preparation of ferroelectric BaTiO3 Thin Film on Polycrystalline BaPbO3 Substrate by Sol-Gel Processing and Their Electric Properties”, Appl. Phys. Lett , 62(1993),p.3372
30. T. Azuma, Y. Sakamoto, M. Kuwabara ,”Preparation and Basic of BaTiO3-BaPbO3 Multilayer Thin films by Metal-Alkoxide Method ”, Jpn. J. phys., 32(1993), p.4089
31.T. Azuma, Y. Sakamoto, K. Mitani, S. Takahashi and M. Kuwabara, ”Preparation and Electric Conductivity of Metallic Conductive BaPbO3 Thin films by Metal-Alkoxide Method ”, J. Ceram. Soc. Jpn., 103(1995), p.809
32. F. Wang , H. Zhang , ”Preparation of Conductive Barium Metaplumbate Thin Film Using Solution Method ”, Mater. Res. Bulletin, 31(1996), p.37
33. M.C. Chang, J.M. Wu, S.Y. Cheng, S.Y.Chen ,” Reaction kinetics and mechanism of BaPbO3 formation”, Mater. Chem. Phys., 65 (2000), p.57
34. M. C. Chang, J.M. Wu, S.Y. Cheng ,S.Y. Chen “The effect of ball-millimg solvent on the decomposition properties of Ba(Pb1-xBix)O3”, Mater. Chem. Phys., 69(2001), p.226
35. C.L. Sun, H .W. Wang, M.C. Chang, M.S. Lin, S.Y. Chen, ” Charaterization of BaPbO3 and Ba(Pb1-xBix)O3 thin films”, Mater. Chem. Phys.,78 (2002), p.507
36. Y. R. Luo , J. M. Wu, ”RF-Magnetron Sputtered Conductive Perovskite BaPbO3 films,Jpn. J. Appl. Phys. ,42(2003), p. 242
37. A.I. Mardare, C.C. Madare, J.R.A. Fernandes ,P.M. Vilarinho, and E. Joanni, “Plused laser deposition of barium metaplumbate thin films for ferroelectric capacitors” ,Euro. Phys. J., AP 23(2003), p.89
38. Y.R. Luo , J.M. Wu , ”BaPbO3 perovskite electrode for lead zirconate titanate ferroelectric thin films”, Appl. Phys. Lett . ,79(2001), p.3699
39. C.S. Liang, J.M. Wu, and M.C. Chang,” Ferroelectric BaPbO3 / PbZr0.53Ti0.47 /BaPbO3 heterostructures ”, Appl. Phys. Lett. 81(2002), p.3624
40. L. A. Bursill, I. M. Reaney, D. P. Vijay and S. B. Desu, “Comparison of lead zirconate titanate thin films on ruthenium oxide and platinum electrodes”, J. Appl. Phys., 75 (1994), p. 1521
41. H. N. Al-Shareef, B. A. Tuttle, W. L. Warren, T. J .Headly, D. Dimos, J. A. Voigt and R. D. Nasby, ”Effect of B-Site Cation Stoichiometry on Electrical Fatigue of RuO2/Pb(ZrxTi1-x)O3/RuO2 Capacitors ”, J. Appl. Phys., 79 (1996) ,p.1013
42. Y. Park, S. M. Jeong, S. I. Moon, K. W. Jeong, S. H. Kim, J. T. Song and J. Yi, “Pt and RuO2 Bottom Electrode Effects on Pb(Zr,Ti)O3 Memory Capacitors”, Jpn. J. Appl. Phys., 38 (1999), p. 6801
43. H. N. Al-Shareef, A. I. Kingon and O. Auciello, “Influence of platinum interlayers on the electrical properties of RuO2/Pb(Zr0.53Ti0.47)O3/RuO2 capacitor heterostructures”, Appl. Phys. Lett., 66 (1995) , p.239
44. K. Sreenivas, M. Sayer, T. Laursen, J. L. Whitton, R. Pascual, D. J. Johnson, D. T. Amm, G. I. Sproule, D. F. Mitchell, M. J. Graham, S. C. Gujrathi and K. Oxorn, ”Character of Lead Zirconate Titanate (PZT)-Indium Tin Oxide(ITO) Thin Film Interface ” , Mater. Res. Soc. Symp. Proc., 200 (1990), p.255
45. A. V. Rao, S. A. Mansour and A. L.Bement, ” Fabrication of Ferro- electric PZT Thin Film Capacitors with Indium Tin Oxide (ITO) Electrodes”, Mater. Lett., 29 (1996), p. 255
46. R. Ramesh, W. K. Chan, B. Wilkens, H. Gilchrist, T. Sands, J. M. Tarascon, V. G. Keramidas, D. K. Fork, J. Lee and A. Safari, “Fatigue and Retention in Ferroelectric Y-Ba-Cu-O / Pb-Zr-Ti-O / Y-Ba-Cu-O Heterostructures” , Appl. Phys. Lett., 61 (1992), p. 1537
47. J. Lee, L. Johnson, A. Safari, R. Ramesh, T. Sands, H. Gilchrist and V. G. Keeramidas, “Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3 thin film capacitors” Appl. Phys. Lett., 63 (1993), p.27
48. T. J. Cheung, P. E. D. Morgan, D. H. Lowndes, X. Y. Zheng and J. Breen, “Structural and electrical properties of La0.5Sr0.5CoO3 epitaxial films” Appl. Phys. Lett., 62 (1993), p. 2045
49. R. Dat. D. J. Lichtenwalner, O. Auciello and A. I. Kingon , ” poly- crystalline La0.5 Sr0.5CoO3/PbZr0.53Ti0.47/ La0.5 Sr0.5CoO3 Ferroelectric Capacitors on Platinized Silicon with No Polarization Fatigue ”, Appl. Phys. Lett., 64 (1994), p. 2673
50. C. C. Yang, M. S. Chen, T. J. Hong, C. M. Wu, J. M. Wu and T. B. Wu, “Preparation of (100)-oriented metallic LaNiO3 thin films on Si substrates by radio frequency magnetron sputtering for the growth of textured Pb(Zr0.53Ti0.47)O3” , Appl. Phys. Lett., 66 (1995), p. 2643
51. M. S. Chen, T. B. Wu and J. M. Wu, ” Effect of Textured LaNiO3 Electrodes on the Fatigue Improvement of Pb(Zr0.53Ti0.47)O3 Thin Films ”,Appl. Phys. Lett., 68 (1996), p. 1430
52. K. A. Keiko and Y. Fujisaki, “IrO2/Pb(ZrxTi1-x)O3(PZT)/Pt Ferroelectric Thin-Film Capacitors Resistant to an Interlayer-Dielectric-Deposition Process”, Jpn. J. Appl. Phys., 37 (1998), p. L804
53. F. Zhang, S. T. Hsu, T. Li, Y. Ono, J. S. Maa, H. Ying and L. Stecker, Mater. Res. Soc. Symp. Proc., 596 (2000), p. 67
54. 陳銘森, “鎳酸鑭電極對鋯鈦酸鉛溶凝膠製作與特性影響之研究”,清華大學, 博士論文, (1996)
55. 吳啟明, “利用濺鍍法及鎳酸鑭為電極製作動態記憶體之鈦酸鍶鋇薄膜的研究”,清華大學, 博士論文, (1997)
56. Y. Xu, “Ferroelectric Materials and Their Applications”, North-Holland, Netherlands, (1991)
57. 葉明華, “脈衝雷射鍍膜法製備鈣鈦礦型鐵電薄膜之研究”,清華大學, 博士論文, (1994)
58. 李雅明, 固態電子學, 全華科技, (1995)
59. T. Azuma, K. Yumoto, S. Takahashi and M. Kuwabara, “Preparation of Dense BaPbO3 Ceramic Electrode Materials for Ferroelectric Thin Films and Their Electric and Thermal Properties ” J. Ceram. soc. Jpn., 102(1994), p.847
60. 梁春昇, “氧化物電極上PZT薄膜之製備及特性研究” 清華大學, 碩士論文,(2001)
61. G. Teowee, J.M. Boulton, K. McCarthy, E.K. Franke, T.P. Alexander, T.J. Bukowski and D.R. Uhlmann, “ Effect of PbO Content on the Properties of Sol- Gel Derived PZT Films”,Integrated Ferrlelectrics,14(1997), p.265