以鋁氮化鎵/氮化鎵高電子遷移率電晶體進行極化液體黏度感測

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研究生：	方容瑩
論文名稱：	以鋁氮化鎵/氮化鎵高電子遷移率電晶體進行極化液體黏度感測 Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids
指導教授：	王玉麟
口試委員:	王禎翰鄭暉騰
學位類別：	碩士 Master
系所名稱：	工學院 - 奈米工程與微系統研究所 Institute of NanoEngineering and MicroSystems
論文出版年：	2014
畢業學年度：	102
語文別：	英文
論文頁數：	36
中文關鍵詞：	鋁氮化鎵/氮化鎵、高電子遷移率電晶體、黏度、波動
外文關鍵詞：	fluctuation
相關次數：	點閱：2 下載：0
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本研究針對未開閘極之鋁氮化鎵/氮化鎵高電子遷移率電晶體 (AlGaN/GaN high electron mobility transistors, HEMTs) 在汲極-源極電壓為0.5伏特下，進行於不同流體中的汲極電流波動量測。閘極區域上鍍有閘極金屬之高電子遷移率電晶體，於去離子水中的汲極電流有很好的穩定性；然而，閘極區域上未鍍有閘極金屬之高電子遷移率電晶體，於去離子水中的汲極電流則穩定性不佳且電流波動很大。汲極電流取自流體的即時量測並以標準偏差計算電流波動值，其中流體包含空氣、去離子水、乙醇、二甲基亞碸、乙二醇、1,2-丁二醇和丙三醇。在室溫下，我們發現未鍍有閘極金屬之高電子遷移率電晶體的汲極電流波動值與液體的偶極矩和黏度有相關，液體的黏度越大，其汲極電流波動值越小。液體黏度與汲極電流值的相關性歸因於液體分子的布朗運動(Brownian motion)，此分子運動導致閘極區域的表面偶極產生變動。本研究發現高電子遷移率電晶體於流體中，導致汲極電流波動的因素，此結果顯現鋁氮化鎵/氮化鎵高電子遷移率電晶體可作為用來量測某一範圍之液體黏度的感測器。

The drain current fluctuation of ungated AlGaN/GaN high electron mobility transistors (HEMTs) measured in different fluids at a drain-source voltage of 0.5 V was investigated. The HEMTs with metal on the gate region showed good current stability in deionized water, while a large fluctuation in drain current was observed for HEMTs without gate metals. The fluctuation in drain current for the HEMTs without gate metals were observed and calculated as standard deviation from a real-time measurement in air, deionized water, ethanol, dimethyl sulfoxide (DMSO), ethylene glycol, 1,2-butanediol, and glycerol. At room temperature, the fluctuation in drain current for the HEMTs without gate metals was found to be relevant to the dipole moment and the viscosity of the liquids. A liquid with a larger viscosity showed a smaller fluctuation in the drain current. The viscosity-dependent fluctuation of the drain current was ascribed to the Brownian motions of the liquid molecules, which induced a variation in the surface dipole of the gate region. This study uncovers the causes of the fluctuation in drain current of HEMTs in fluids. The results show that the AlGaN/GaN HEMTs may be used as sensors to measure the viscosity of liquids within a certain range of viscosity.

Chinese abstract.......................................................................................................................iii
English abstract.........................................................................................................................iv
List of Figures.........................................................................................................................vii
List of Tables..........................................................................................................................viii
Chapter 1 Introduction...............................................................................................................1
1.1    Motivation....................................................................................................................1
1.2 Background..................................................................................................................1
Chapter 2 Literature Review.......................................................................................................3
    2.1 Applications of AlGaN/GaN HEMTs sensors..............................................................3
      2.1.1 Gas sensing............................................................................................................3
      2.1.2 Mercury ions sensing............................................................................................7
      2.1.3 pH sensing.............................................................................................................9
      2.1.4 Botulinum toxin sensing......................................................................................11
      2.1.5 DNA sensing.......................................................................................................13
      2.1.6 Temperature and Pressure sensing.......................................................................14
    2.2 AlGaN/GaN heterostructure field effect transistors for polar liquid sensing.............15
    2.3 The viscosity dependence of Brownian motion of microspheres...............................16
Chapter 3 Materials and Methods............................................................................................19
    3.1 Fabrication of AlGaN/GaN HEMTs sensors..............................................................19
    3.2 Sensor measurements.................................................................................................20
Chapter 4 Results and Discussions...........................................................................................22
    4.1 Temperature drifting effect of AlGaN/GaN HEMTs sensors.....................................22
    4.2 Temperature dependence of AlGaN/GaN HEMTs sensors........................................23
    4.3 Real-time measurements of AlGaN/GaN HEMTs sensors.........................................26
    4.4 Dipole moment and viscosity of each fluid versus the fluctuation of drain current for
AlGaN/GaN HEMTs sensors.....................................................................................28
Chapter 5 Conclusions.............................................................................................................32
Chapter 6 References................................................................................................................33

                                

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