本實驗提出一種簡單、低成本且高產量的浸鍍法(immersion plating)製作金奈米晶體(gold nanocrystal)，並完成金氧半電容(MOSC)結構的非揮發記憶體。在沉積金奈米晶體後快速熱退火為了改善金粒與矽的介面。以氧化鑭當作控制介電層，藉以提升寫入/抹除速度，
利用高溫氧化法在矽上成長二氧化矽當作穿遂氧化層，厚度為5、7奈米，接著低壓沉積非晶矽，厚度為2奈米，此層作為浸鍍法行氧化還原反應時矽原子的來源，浸鍍液成分為四氯化金酸/氫氟酸濃度為0.48mM/1.5mM，浸鍍時間3秒鐘，金奈米晶體於矽表面還原形成，以掃描式電子顯微鏡和穿透式電子顯微鏡觀察金粒尺寸及密度。
對於控制介電層，氧化鑭厚度20、30奈米由電子槍蒸鍍後回火400度時間10分鐘，蒸鍍鋁後，形成鋁/氧化鑭/金奈米晶體/二氧化矽/p型矽結構，氧化鑭(20奈米)配合二氧化矽(7奈米)和氧化鑭(30奈米)配合二氧化矽(5奈米)，由電容-電壓量測來決定寫入抹除特性。為了改善慢的抹除速度，沉積金奈米晶體後快速熱退火200度30分鐘，由電流-電壓的特性，討論穿遂電流機制，發現在小電場(0~8MV/cm)時主要為直接穿遂，大電場(9~13MV/cm)時為F-N穿遂主導，發現穿遂電流有明顯提升，RTA製程改善寫入抹除速度。氧化鑭(30奈米)/二氧化矽(5奈米)此厚度條件下，在104秒後仍有1.1伏的retention特性，在103次寫入抹除週期後仍有2.1伏的endurance特性。

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