本論文主要研究一維鎵基奈米材料的合成、鑑定與應用，共分為以下幾個主題：(1)純氧化鎵奈米線之合成技術，(2)一維豆莢狀金-氧化鎵 (Au-peapodded Gallium Oxide Nanowires)複合奈米線之合成技術與奈米元件製作，(3) 一維豆莢狀金-氧化鎵複合奈米線的光學及電學性質量測研究
在此介紹兩種一維豆莢狀金-氧化鎵奈米線的製備方式，(a)一階段合成法：藉由金屬鎵，金及二氧化矽於800°C下反應，便可生成具有雙晶結構之一維豆莢狀複合奈米線，(b)二階段合成法: 將一維核殼狀金-氧化鎵奈米線 (Core-Shell Au-Gallium Oxide Nanowires)，經由簡單地熱退火實驗，而製作出許多各式各樣的一維豆莢狀金-氧化鎵奈米線。
另外，藉著使用暗視野模式光學顯微術研究其區域表面電漿共振特性 (Localized Surface Plasma Resonance, LSPR)，發現其散射光譜的特徵峰，會隨著鑲埋在氧化鎵奈米線內的金奈米顆粒之粒徑大小及不同的形狀，而有不同的峰值。而此種豆莢結構之複合奈米線材料，因其區域表面電漿共振特性，使其具有對532及658奈米波長之可見光的高感光度吸收效應，因此具有很大的潛力用來製作奈米光電元件。

The present thesis focused on the synthesis, characterizations and applications of the one-dimensional 1-D Ga-based nanometerials, including the following topics: (1) synthesis of pure Ga2O3 nanowires, (2) synthesis and fabrication of nanodevices of gold-peapodded Ga2O3 nanowires, (3) investigation of optical and electrical properties of gold-peapodded Ga2O3 nanowires.
Here, we report two different methods to synthesize gold-peapodded Ga2O3 nanowires, (a) one-step method: novel metal-insulator heterostructures made of twinned Ga2O3 nanowires with embedded discrete gold particles were achieved through a reaction between gold, gallium, and silica at 800° C. (b) two-step method: various gold-peapodded Ga2O3 nanowires were well designed via thermal annealing processes of the core-shell gold-Ga2O3 nanowires at a sufficient high temperature.
Furthermore, dark-field optical microscopy was utilized to investigate the localized surface plasmon resonance (LSPR) characteristics of 1-D Ga-base nanowires. It was observed that varied scattering spectra peaks were obtained with different embedded particle sizes and shapes. Owing to the localized surface plasmon resonance effect, single gold-peapodded Ga2O3 nanowire device with highly photosensitive absorption of 532 and 658 nm visible light was designed, which may be chosen as potential building blocks for nanoscale optoelectronics.

Chapter 1
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