近年來消費者對產品的輕薄化及高效能的需求，進行系統晶片整合以縮小構裝尺寸乃必然趨勢。然而，無論是同質或異質整合的系統構裝模組都會導致高功率密度，造成局部高溫甚至熱點。由於堆疊晶片模組中各元件之熱膨脹係數不匹配，易造成高度局部應力及構裝體破壞，故熱負載下的可靠度要求已成為先進構裝之重要課題之一。本論文即在發展一簡化、有效之有限單元分析模型，以探討含矽穿孔及微接點三維晶片堆疊構裝於加速熱循環負載下之可靠度。因微接點間距與尺寸均遠小於傳統構裝，且矽穿孔與矽晶片間存在嚴重熱膨脹係數不匹配，其熱負載之可靠度尤應予關注。
由於矽穿孔及微接點數量龐大，本論文首先利用有限單元法及Schapery計算公式對含矽穿孔單晶片進行等效熱膨脹係數分析，探討矽穿孔間距、直徑、二氧化矽層厚度及晶片厚度等因子對等效熱膨脹係數的影響。接著，以上述等效熱膨脹係數分析結果為基礎，本論文以工研院之含矽穿孔三維晶片堆疊構裝為載具，建立其三維全域精細、區域精細及全域/局部等三種有限單元結構分析模型，分別探討其於加速熱循環負載下之熱應力。與全域精細有限單元模型分析結果相比較，以有限單元法得到之等效熱膨脹係數配合區域精細及全域/局部有限單元模型分析所得結果，區域精細有限單元模型於準確性方面較全域/局部有限單元模型高，但全域/局部有限單元模型分析準確性尚可接受，於計算時間上全域/局部有限單元模型卻大大少於區域精細有限單元模型，區域精細有限單元模型計算時間為全域精細有限單元模型分析之百分之七十，但全域/局部有限單元模型僅需百分之八。
最後，本論文以全域/局部有限單元模型進一步結合Coffin-Manson疲勞壽命方程式探討三維晶片堆疊構裝在加速熱循環負載下微接點之疲勞壽命，並對不同的填充底膠、介金屬材料厚度、矽穿孔材料、直徑、間距及晶片厚度等影響因子進行參數化分析，以建構評估矽穿孔熱應力及微接點疲勞壽命之參考準則。
 

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