隨著第五代行動通訊的發展，高速處理器和記憶體的需求也隨之提高，因此有了大量的高頻測試需求，為了加速晶圓測試端的效率，並降低由測試端所造成的產量損失(yield loss)，故探針卡(Probe Card)的發展是降低測試時間和成本的重要關鍵。依晶圓設計及應用頻率範圍的不同，也有相對應的探針卡種類，本論文因應高速高頻的需求，使用薄膜式探針卡(Membrane Probe Card)來設計，探討薄膜上傳輸路徑的不同架構及分析方式，在毫米波應用時，有低訊號損失的特性。
本論文後半段，主要探討使用氮化鎵製程所設計之射頻功率放大器。氮化鎵材料具有寬能隙和高的飽和電子遷移率及良好的耐溫特性，適合當作高頻、高溫以及高功率輸出的功率放大器的首選材料。射頻功率放大器的研究動機及基本介紹也會在第三章來做說明，第四章及第五章會討論功率放大器設計的流程及細節，第一個功率放大器利用穩懋0.25-m氮化鎵製程設計在sub-6GHz之兩級功率放大器，其量測結果達到33.8 dBm的輸出飽和功率及20.4 dB的功率增益。第二個設計為穩懋0.15-m氮化鎵製程操作在28 GHz的兩級平衡式功率放大器，輸入和輸出埠採用兩組相位差為90度的等功率分配器，利用分配器兩個分量做相加相減，達到耦合或隔離的效果。此設計之放大器在操作頻率為28 GHz時，達到效率24.3 %以及13.6 dB的功率增益和32.1 dBm的飽和功率。

With the development of the fifth generation wireless systems, the demands for high-speed processors and memory have been increased accordingly. Following the demand for high-speed applications, the high-frequency testing technologies become more and more important. To increase the efficiency of wafer testing and to reduce the yield loss from testing, probe cards play a significant role. Depending on the wafer design and frequency, there are corresponding types of probe cards. In the first part of this thesis, in compliance with the high-speed and high-frequency requirements, different structures of the transmission lines are studied and analyzied to achieve high performance and low loss for mm-wave probe card on wafer testing applications.
The design of RF power amplifiers by using Gallium-Nitride (GaN) High Electron Mobility Transistors (HEMTs) process is in the second part of the thesis. GaN HEMT presents the property of wide band-gap, high electron saturation velocity, and high thermal conductivity. Therefore, GaN material is suitable for power amplifiers applications under the operation of high frequency and high output power. The motivation and basic introduction of RF power amplifiers are presented in chapter 3. Chapter 4 and chapter 5 present the design flow and methods in details of power amplifiers. The first design is a two-stage power amplifier operating at sub-6 GHz using 0.25-m GaN HEMT process. The measured results show the saturation output power is about 33.8 dBm with the power gain of 20.4 dB. The second circuit presents a 28-GHz two-stage balanced power amplifier using 0.15-m GaN HEMT process. The input and output ports use two 3-dB couplers with 90o phase difference. The signal can be coupled or isolated by the quadrature hybrid. The designed PA reaches a power gain exceeding 13.6 dB and a saturation power of 32.1 dBm with PAE more than 24.3 % at 28 GHz.

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