本研究目的係利用低溫、均勻的大氣電漿束處理類鑽碳膜，並研究其表面能的改變。本實驗中，先使用13.56 MHz之電容式射頻電漿源，功率100 W、壓力10 mTorr、沉積時間15 min、氣體H2：CH4＝1：1，成長類鑽碳膜，再以大氣電漿束，以固定60度角的方式，通入氣體Ar或He，改變不同的功率與流量，處理DLC試片，經由量測接觸角，來了解表面能的變化。同時使用化學能量分析電子術(ESCA)、Langmuir probe、與光學放射頻譜分析儀(OES)量測系統，來分析造成表面能改變的因素。
經大氣電漿束處理後的類鑽碳膜，接觸角會下降，表面能的極性項會大幅增加，而非極性項會稍稍下降。因為經大氣電漿束處理，會打斷DLC表面的聚合物長鍊鍵結，造成表面能非極性項的值降低，同時，大氣電漿束會激發游離大氣中的O2與N2形成氧的活化粒子，對基板表面蝕刻，而與表面的碳原子形成極性鍵結，造成較強的極性。當功率增加，氧的活化粒子變多，表面的C-O鍵結增加；當流量增加，大氣電漿束噴口前端的壓力減小，有更多大氣中的O2與N2靠近噴口前端，因此更多C-O鍵結於類鑽碳膜的表面形成，造成表面能的極性項隨流量增加而增加。

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