本實驗探討改變覆蓋層種類(Ti/TiN)及其厚度，對鈷矽化物反應系統的影響。藉由in situ曲率量測，輔以X光繞射分析、片電阻量測、歐傑電子能譜儀和穿透式電子顯微鏡，將有助於了解在真空中(＜5×10-6 torr)以每一分鐘5 ℃的退火升溫速率下Co/Si、Ti/Co/Si、TiN/Ti/Co/Si、TiN/Co/Si、Ti/TiN/Co/Si系統的反應演變。對於鈷矽化物的相轉換，提供一些製程上的資訊。
與單純Co/Si系統比對，覆蓋Ti層於Co上方，Ti原子會擴散至Co，依據X光繞射分析結果顯示，在496℃~665℃溫度區間(Ti層越厚，區間越廣)出現Co3Ti2Si三元相。將抑制Co原子的擴散使得CoSi2最終相生成溫度延後至約665℃~685 ℃。再覆鍍TiN層於最外部的系統，TiN隔絕了外界的氧直接接觸Ti層，應力量測結果沒有出現由於Ti吸氧導致曲線往壓應力方向移動的特徵。CoSi2相轉變溫度同樣是被延後的(~665 ℃)。
Co上方覆鍍TiN的系統，提前在580 ℃即偵測到CoSi2(220)的繞射峰，對後續的製程是有利的。觀察試片的橫截面，CoSi2整層厚度均勻，與矽的界面及上表面都很平坦，高溫(達800 ℃)時亦然。反之，Co上方覆蓋Ti層的系統CoSi2相與矽基材的界面崎嶇不平整，高溫時(＞700 ℃)可看出有一磊晶的優選取向，尤以TiN/Ti/Co/Si系統更為顯著。
最後在氮氣的環境下以每秒50℃的速率做快速升溫退火，結果顯示大部分試片CoSi2相生成溫度區間與真空爐管退火的結果是相似的，皆在合理的誤差範圍。唯有Ti(5,10nm)/Co/Si系統由於表面整層氮化為TiN使得CoSi2低電阻相提前在600 ℃~ 650 ℃出現，電阻值特徵與TiN(5nm)/Co/Si系統雷同。而RTA的反應時間短暫，Co相變為CoSi相的轉變不完全，則讓部分試片的電阻值在前段溫度區間(＜550 ℃)呈現一個緩慢上升的趨勢。

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