本研究重點在於利用溶液方式合成 p型氧化亞銅 (Cu2O) 與鈷摻雜之 n型二氧化錫 (Sn1-xCoxO2) 奈米結構氧化物製作異質介面太陽能電池，以期達到全太陽光光譜吸收之目的，且藉由噴塗技術 (spray technology) 與熱壓系統製作太陽能電池，達到低成本與大面積製作等優勢。
本研究將嘗試藉由調整摻雜不同重量百分比之硫酸鈷水合物、氯化錫水合物濃度和pH值，製備出以低溫 (□ 90 □C) 濕式化學法成長的Sn1-xCoxO2顆粒結構與Cu2O奈米結構，並利用此兩種無毒且地球蘊藏豐富的元素分別作為n型與p型半導體材料，並結合噴塗技術與熱壓製程成功製作出n-Sn1-xCoxO2/p-Cu2O奈米結構異質介面太陽能電池。
另一方面，本研究亦分析氧化物之光學特性，得知 n-Sn1-xCoxO2顆粒太陽光光譜吸收波段為700 nm至1400 nm，此與吸收波段300 nm至800 nm之p-Cu2O結合成功達到可預期之太陽光光譜全波段吸收之目的。
在本研究中利用噴塗技術與熱壓系統製作之n-Sn1-xCoxO2/p-Cu2O奈米結構異質介面太陽能電池，隨著不同硫酸鈷摻雜重量百分比逐步0 wt%, 0.025 wt% 到 0.075 wt% 遞增，其最高能量轉換效率亦為線性增加，分別為7□10-4%、0.43%與1.2%，目前最高能量轉換效率為以n-Sn0.86Co0.14O2/p-Cu2O 製作之太陽能電池，其為開路電壓 (open-circuit voltage, Voc) Voc＝ 2.325 V，短路電流 (short-circuit current, Jsc) Jsc ＝1.426 mA/cm2，填充因子 (fill factor, FF) FF ＝36%，能量轉換效率 (power conversion efficiency, PCE) PCE ＝1.2%。
相較目前文獻報導，以溶液方式製作之氧化物奈米結構太陽能電池之最高能量轉換效率為0.88%，本研究可成功的製作n-Sn0.86Co0.14O2/p-Cu2O氧化物奈米結構異質介面太陽能電池之最高能量轉換效率為1.2%。

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