本論文主要研究單晶矽材料的奈米級延性加工行為、延/脆性轉換機制與非破壞性表面品質檢測方法,其次探討非晶質矽薄膜經過加馬射線照射後,其機械性質、物理性質的改變以及在退火作用下上述兩者的變化,此外,薄膜/基板系統的應力鬆弛現象也在探討之列◦
單晶矽延/脆性轉換的加工行為首先是在許多實驗中發現,本研究提出之差排堆積模式成功的以差排產生、滑移與堆積以至於成核裂縫的解析方式,解釋此現象的存在,並導出其臨界切深與材料特性以及加工參數之關聯,此外,提出以微拉曼光譜的檢測方法,利用波峰圖形受到材料因加工而導致殘留應力的影響,以致於發生中心值偏移與半高寬變大的現象,成功的建立表面變質層的非破壞性檢測方法,其精確度並透過電子顯微術(E-beam Microscopy)得到驗證◦
在極低的加工負荷以及較高的環境溫度下,單晶矽材料的形變主要是受到質傳的影響,本研究提出質傳模式,推導分析對於刀具形狀(圓錐、球形)與負荷條件(定壓入速度、定負荷)下,應力場的分佈情形,發現最大液靜壓應力出現在壓子尖端附近,而最大液靜壓應力則等比於壓入速度與施加的負荷,但是反比於原子遷移率,此外,最大液靜壓應力在等壓入速度下等比於壓入面積,在等施加負荷之下,反比於壓入面積。
此外,本論文探討加馬射線對於非晶質矽薄膜的機械與物理性質的影響,透過奈米壓痕實驗發現非晶質薄膜的硬度與照射劑量成正比,其對應薄膜深度的縱向分佈,成指數函數遞減,在中低劑量( < 600 kGy)下,其硬度增加率大於高劑量( > 600 kGy)的增加率,而其飽和硬度則隨著劑量增加而降低, 飽和硬度並與劑量呈線性關係,其斜率為低劑量( < 600 kGy)大於高劑量( > 600 kGy)。經由傅立葉轉換光譜分析,發現高氫原子配位的矽鍵結(SiH3)受到加馬射線照射後逐漸轉化為低氫原子配位的矽鍵結(SiH),而此過程中產生大量的空懸鍵(Dangling Bond),此空懸鍵為硬度隨著劑量增加的主要因素。透過掠角X-ray的光譜分析,本研究更發現加馬射線在常溫下會增加非晶質矽薄膜的結晶度,並且其結晶度與劑量成正比。
在受到低溫(< 100oC)退火的作用下,經過加馬射線照射後之非晶質矽薄膜,其表面硬度迅速下降,趨近於其飽和硬度,而其飽和硬度則隨著退火溫度增加而緩慢下降。經過85oC以上溫度退火5分鐘之後,非晶質矽薄膜的硬度與薄膜深度成線性關係,其斜率並與照射劑量成正比。此外,在高溫(> 550oC)退火作用下,受到加馬射線(1000 kGy)照射之非晶質矽薄膜,其結晶度增加率與飽和結晶度皆高於未經照射之非晶質矽薄膜。
本研究製作非晶質矽薄膜蕭基二極體, 經加馬射線照射後量測其I-V, C-V特性曲線,用以探討加馬射線對於非晶質矽薄膜物理性質(電性)的影響,實驗結果顯示,加馬射線在常溫與低劑量( < 200 kGy)下會改善非晶質矽薄膜蕭基二極體的效能因子(Quality Factor), 但是在高劑量下,其效能因子會漸漸劣化,雖然低溫退火可以改善受到高劑量加馬射線之非晶質矽薄膜蕭基二極體的效能因子,但是無法完成恢復。在高的正向偏壓下, 非晶質矽薄膜蕭基二極體的傳導因子(Conduction Factor)與截斷電壓(Cut-off Voltage)會隨著劑量增加而增加,經過低溫退火後, 傳導因子的值會降至2~3之間, 而截斷電壓則不會隨著低溫退火而降低,反而會朝高劑量的截斷電壓值收斂。此外,非晶質矽薄膜蕭基二極體的整流比(Rectification Ratio)在常溫與低劑量( < 200 kGy)下會增加,但是隨著劑量增加而漸漸降低。
非晶質矽薄膜蕭基二極體在受到加馬射線照射後,其電容值會隨著劑量增加而降低,其逆向偏壓(Reverse Bias)的截斷電壓會隨著劑量增加而增加,其電容隨著偏壓的增加率與劑量呈指數函數遞減的關係。在低溫退火下,經過低劑量(< 200 kGy)照射之非晶質矽薄膜蕭基二極體的電容值會漸漸增加,當溫度超過75oC時,電容值反而降低,而經過95oC, 5分鐘退火後之二極體,其電容值與未經照射之二極體相比幾乎可以忽略,顯示其蕭基能障已失去作用。
由於薄膜/基板系統在各式各樣元件製程上應用廣泛,因此,本研究量測不同薄膜/基板厚度比(hf/hs=0.01~0.04)與在不同持溫(100~150oC)條件下,非晶質鍺薄膜/單晶矽基板系統的結構鬆弛現象,實驗結果顯示在低溫(~100oC)與較小的厚度比(~0.01)之下,非晶質鍺薄膜/單晶矽基板系統的結構鬆弛可以運用Maxwell或Kelvin模式來近似,而當溫度增加或是厚度比增加時,由於薄膜/基板系統的正常化的飽和曲率趨近於零, 上述薄膜/基板系統的結構鬆弛現象較為接近Maxwell模式。
此外,薄膜/基板系統上的薄膜層數與材質因不同製程的需求而有不同的組成,其中薄膜層數為兩層時即所謂三明治結構的系統,如SOI(Semiconductor on Insulator)、磊晶晶圓(Epi Wafer)已被大量使用於半導體元件製程上,由於半導體製程大多伴隨著高溫與化學氣氛,因此,三明治結構內因雜質擴散而導致的化學應力對於元件機械性質的影響已漸受重視,本研究探討兩種擴散起始條件,即定表面濃度源與瞬間表面濃度源,模擬數據顯示,當在瞬間表面濃度源的情形下, 三明治結構系統的外表面附近在擴散開始不久時,會產生極大的應力,此結果暗示在瞬間表面濃度源的情形下,材料會產生機械式的破壞,如差排和微小裂縫等。

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