空間電荷限制電晶體應用於主動式壓力感測元件

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研究生：	賴韋仁 Lai, Wei-Jen
論文名稱：	空間電荷限制電晶體應用於主動式壓力感測元件 Space-Charge-Limited Transistor and its Application on Active Pressure Sensor
指導教授：	洪勝富 Horng, Sheng-Fu 孟心飛 Meng, Hsin-Fei 冉曉雯 Zan, Hsiao-Wen
口試委員:
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電子工程研究所 Institute of Electronics Engineering
論文出版年：	2009
畢業學年度：	97
語文別：	中文
論文頁數：	79
中文關鍵詞：	主動式、垂直式電晶體、對壓力敏感的橡膠、反應時間
外文關鍵詞：	Active, Vertical transistor, Pressure sensitive rubber, Response time
相關次數：	點閱：2 下載：0
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由於大面積的陣列半導體元件可用於移動的機器、人體上或是用於其他生物體的外面或裡面的一些非平面的表面上，所以大面積的陣列半導體元件吸引了許多人的目光。這種巨形電子元件是由許多東西組合而成的：包含可饒式基板、驅動用的電晶體陣列以及偵測器的陣列。這些偵測器是用來收集外界的資訊，另外電晶體則是用來控制此主動驅動陣列的開關。
本論文旨在發展一種壓力感測元件，藉由垂直式空間電荷限制電晶體整合一層對壓力敏感的橡膠。文中詳細介紹兩種空間電荷限制電晶體，並針對其製程與工作原理討論。首先，初代空間電荷限制電晶體，其輸出電流為27mA/cm2，開關比為385，電流增益約為104。第二部份為新型空間電荷限制電晶體，此結構具有完整絕緣體包覆住柵極，故能大幅降低off current提高開關比，其輸出電流為5.15mA/cm2，開關比大幅提升至10775。將空間電荷限制電晶體與壓力感測層
整合成主動式感測元件，當壓力施加於壓力感測層時輸出電流有很快速的反應，其反應時間約22毫秒。

中文摘要------------------------------------------------------------------------------------------I
英文摘要-----------------------------------------------------------------------------------------II
致謝----------------------------------------------------------------------------------------------III
目錄----------------------------------------------------------------------------------------------IV
Chapter I 序論----------------------------------------------------------------------------------1
1-1    前言------------------------------------------------------------------------------------1
1-2    研究動機與方向---------------------------------------------------------------------2
1-3    論文架構------------------------------------------------------------------------------3
Chapter II空間電荷限制電晶體原理介紹-------------------------------------------------4
2-1 空間電荷限制電晶體之結構------------------------------------------------------ 4
    2-1-1 初代空間電荷限制電晶體-------------------------------------------------4
    2-1-2 新型空間電荷限制電晶體-------------------------------------------------5
2-2 操作方式------------------------------------------------------------------------------ 5
2-3材料介紹與選擇-----------------------------------------------------------------------6
    2-3-1 有機高分子材料簡介-------------------------------------------------------6
    2-3-2 電洞傳輸材料----------------------------------------------------------------7
    2-3-3 絕緣層材料-------------------------------------------------------------------9
2-4 真空管原理--------------------------------------------------------------------------10
2-5 金屬半導體接面--------------------------------------------------------------------10
2-6有機共軛高分子載子傳輸理論---------------------------------------------------13
Chapter III 實驗製程與實驗設計---------------------------------------------------------16
3-1 初代空間電荷限制電晶體製作流程--------------------------------------------16
        3-1-1 ITO基板蝕刻----------------------------------------------------------------16
        3-1-2 ITO clean---------------------------------------------------------------------17
        3-1-3 PEDOT:PSS成膜-----------------------------------------------------------17
        3-1-4 主動區成膜----------------------------------------------------------------- 18
        3-1-5 旋轉浸潤法----------------------------------------------------------------- 18
        3-1-6 安置PS球-------------------------------------------------------------------18
        3-1-7 柵極蒸鍍及去除PS球----------------------------------------------------19
        3-1-8 主動區第二層-------------------------------------------------------------- 19
        3-1-9 集極蒸鍍-------------------------------------------------------------------- 20
        3-1-10 元件封裝-------------------------------------------------------------------20
3-2 新型空間電荷限制電晶體製作流程--------------------------------------------21
    3-2-1 O2 Plasma處理--------------------------------------------------------------21
    3-2-2絕緣層PVP成膜------------------------------------------------------------21
    3-2-3 安置PS球-------------------------------------------------------------------21
    3-2-4 柵極蒸鍍及去除PS球----------------------------------------------------22
    3-2-5 去除PVP---------------------------------------------------------------------22
    3-2-6 主動區成膜----------------------------------------------------------------- 22
    3-2-7 集極蒸鍍-------------------------------------------------------------------- 23
    3-2-8 元件封裝-------------------------------------------------------------------- 23
3-3 壓力感測器製作--------------------------------------------------------------------24
3-4空間電荷限制電晶體與壓力感測器之整合------------------------------------25
3-5 量測-----------------------------------------------------------------------------------26
3-6 實驗設計與構想--------------------------------------------------------------------27
Chapter IV 實驗結果與分析---------------------------------------------------------------28
    4-1 初代空間電荷限制電晶體--------------------------------------------------------28
        4-1-1 E-G Diode特性--------------------------------------------------------------29
        4-1-2 孔洞狀柵極----------------------------------------------------------------- 31
        4-1-3 孔洞大小與密度之影響-------------------------------------------------- 33
        4-1-4 初代空間電荷限制電晶體之特性與探討----------------------------- 35
        4-1-5無封裝下的Lifetime-------------------------------------------------------37
        4-1-6 改善射極的注入----------------------------------------------------------- 38
        4-1-7 射極金屬改變之電晶體特性與探討----------------------------------- 40
        4-1-8 檢查PS球分佈對於射極金屬的改變----------------------------------42
    4-2 新型空間電荷限制電晶體--------------------------------------------------------44
        4-2-1 E-C Diode特性--------------------------------------------------------------45
        4-2-2 絕緣層特性----------------------------------------------------------------- 47
        4-2-3 孔洞狀柵極----------------------------------------------------------------- 49
        4-2-4 主動區成膜----------------------------------------------------------------- 54
        4-2-5 新型空間電荷限制電晶體之特性與探討----------------------------- 56
    4-3 壓力感測器--------------------------------------------------------------------------58
        4-3-1 受壓力之電性變化-------------------------------------------------------- 59
        4-3-2 受壓力之反應時間-------------------------------------------------------- 61
    4-4 整合初代電晶體與壓力感測器(確認基本電性)------------------------------63
        4-4-1垂直整合----------------------------------------------------------------------65
        4-4-2壓力測試(1kg/cm2)--------------------------------------------------------- 67
        4-4-3壓力測試(0.5kg/cm2)-------------------------------------------------------69
    4-5整合新型電晶體與壓力感測器(確認基本電性)------------ ------------------71
        4-5-1垂直整合----------------------------------------------------------------------73
    4-6 電晶體陣列--------------------------------------------------------------------------75
Chapter V 總結-------------------------------------------------------------------------------77
Reference----------------------------------------------------------------------------------------78

                                

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