本篇論文第一章導論提到為何會有分子元件的構想及分子如何附著在電極上，描敘決定分子的傳導機制。第二章理論模型，用我們實驗室在2006年所發的APL論文中談到的模型，當然這模型並不是我們所想的而是參考現有的半導體理論還有別人的模型做小部份的修改而來的，用些來解釋所看到的Id-Vd圖與Id-Vg圖。第三章是量測數據分析與討論，本章分為很多個小節，3-1判斷元件好壞主是討論所做出的元件，如何去很快速的判斷什麼是好的元件，什麼是不好的元件。3-2 分子的電性分析主要是討論跟溫度有關的傳導機制，像跳躍傳導(hopping conduction)，與熱游離傳導方式(thermionic emission)進而去求得位障(barrier height)Φ，與溫度無關的高壓的傳導機制是F.N.穿隧(Fowler-Nordheim Tunneling)。3-3與3-4主要討論不同Vg所造成的(barrier height)Φ希望能去解釋所看到的I-V特徵曲線。3-5主要討論所做的元件Id對Vg微分所看到的能階，對不同溫度或是對不同Vd會有什麼樣的變化。第四章是結論，主要將先前看到的現象做總結，位障(barrier height)Φ並不能解釋Vd<0V的Id電流是比Vd> 0V的Id電流來的大，主要可能是分子本有的行為，還有模型上可以改進的地方。第五章實驗上的改量希望能讓元件的良率有所變善。第六章結論與未來展望。

[1] C. Zhou，M. R. Deshpande，M. A. Reed，J. M. Tour，“Nanoscale metal/ self- asse -mbled monolayer/metal heterostructures”，Appied Physics Letters 71，611 (1997).
[2] 美國化學學會所發行的《化學與化工新聞》周刊Chemicaland Engineering News，(2001).
[3] Stephen K. Lower，“Chemical Bonding”， A Chem1 Reference Text，Simon Fraser University.
[4] Chao-Cheng Kaun and Hong Guo，“Resistance of Alkanethiol Molecular Wires”，NANO LETTERS，Vol. 3，(2003).
[5] http://emp.byui.edu/MANNERL/Chemistry%20105，“Molecular Orbitals in Chemical Bonding Ch.9 ”.
[6] NIRMALYA K CHAKI， M ASLAM，JADAB SHARMA and K VIJAYAMOHANAN，“Applications of self-assembled monolayers in materials chemistry”， Chem. Sci, Vol. 113，(2001).
[7] Gribov N. N.，Theeuwen S.，J. C. H. ，Caro J. & Radelaar S.，“A new fabricaton process for metallic point contacts”，Microelectron. Eng. 35，317~320(1997).
[8] Yu-Tai Tao，Chien-Ching Wu，Ji-Yang Eu，Wen-ling Lin，Kwang-Chen Wu and Chun-hsien Chen，“Structure Evolution of Aromatic-Derivatized Thiol Mon- olaers on Evaporated Gold”，Langmuir (1997).
[9] Brent A. Mantooth and Paul S. Weiss，“Fabrication, Assembly, and Charac- terization of Molecular Electronic Components”，proceeding of the IEEE，Vol. 91, No. 11，November (2003).
[10] 孫介偉，“奈米尺寸單層自組分子元件的製作”，國立清華大學物理研究所碩士論文，(2003).
[11] 廖均恆，“三電極單層自組分子奈米電晶體的研究與製作”，國立清華大學物理研究所碩士論文，(2004).
[12] 劉春福，“應用薄膜橋製作奈米尺寸電晶體及其相關研究”，國立清華大學物理研究所碩士論文，(2004).

[13] 陳敬憲，“自組單分子層電子傳導的場效應”，國立清華大學物理研究所碩士論文，(2005).
[14] 藍偉誌，姚聖恩，鄭博任，余志成，“攪拌方式與蝕刻幾何特徵對KOH 矽蝕刻蝕刻速率及表面粗糙度的影響”，國立高雄第一科技大學機械與自動化工程系，(2004).
[15] Brian Larade，Jeremy Taylor，Q. R. Zheng，Hatem Mehrez，Pawel Pomorski and Hong Guo1，“Renormalized molecular levels in a Sc3N@C80 molecular electronic device”，PHYSICAL REVIEW B，VOLUME 64，(2001).
[16] John G. Simmons，“Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating Film”，JOURNAL OF APPLIED PHYSICS， VOL. 34，(1963).
[17] H. L. Gomes，P. Stallinga，F. Dinelli，M. Murgia，F. Biscarini，D. M. de Leeuw，T. Muck，J. Geurts，L. W. Molenkamp and V. Wagner，“Bias-induced threshold voltages shifts in thin-film organic transistors”，APPLIED PHYSICS LETTERS，VOL. 84，(2004).
[18] Prashant Damle，Titash Rakshit，Magnus Paulsson and Supriyo Datta，“Current–Voltage Characteristics of Molecular Conductors: Two Versus Three Terminal”，IEEE TRANSACTIONS ON NANOTECHNOLOGY， VOL. 1，(2002).
[19] F. Zahid，A. W. Ghosh，M. Paulsson，E. Polizzi and S. Datta，“Charging-induced asymmetry in molecular conductors”，PHYSICAL REVIEW B ，(2004).
[20] Menno Poot，Edgar Osorio，Kevin O’Neill，Jos M. Thijssen，Daniel Vanmaekelbergh Cornelis A. van Walree，Leonardus W. Jenneskens and Herre S. J. van der Zant，“Temperature Dependence of Three-Terminal Molecular Junctions with Sulfur End-Functionalized Tercyclohexylidenes”，NANO LETTERS，Vol. 6，(2006).
[21] Yoram Selzer，Lintao Cai，Marco A. Cabassi，Yuxing Yao，James M. Tour，
Theresa S. Mayer and David L. Allara，“Effect of Local Environment on Molecular Conduction: Isolated Molecule versus Self-Assembled Monolayer”，NANO LETTERS，Vol. 5，(2005).
[22] Kamil Walczak，“Rate-equation calculations of the current flow through two-site molecular device and DNA-based junction”.
[23] S. Jalili and H. Rafii-Tabar，“Electronic conductance through organic nanowires”， PHYSICAL REVIEW B，(2005).
[24] Eldon G. Emberly1 and George Kirczenow，“Models of electron transport through organic molecular monolayers self-assembled on nanoscale metallic contacts”，PHYSICAL REVIEW B，VOL. 64，(2001).
[25] Eldon G. Emberly and George Kirczenow，“Comment on “First-Principles Calculation of Transport Properties of a Molecular Device” ”， PHYSICAL REVIEW LETTERS，VOL. 87，(2001).
[26] Kamil Walczak，“Charging effects in biased molecular devices”.
[27] Changgan Zeng，Bin Li，Bing Wang，Haiqian Wang，Kedong Wang，Jinlong Yang，J. G. Hou and Qingshi Zhu，“What can a scanning tunneling microscope image do for the insulating alkanethiol molecules on Au（111） substrates? ”，JOURNAL OF CHEMICAL PHYSICS，VOL. 117，(2002).
[28] M. Di Ventra，S. T. Pantelides and N. D. Lang，“First-Principles Calculation of Transport Properties of a Molecular Device”，PHYSICAL REVIEW LETTERS，VOL. 84，(2000).
[29] J. Chen, T. Lee，J. Su，W. Wang，M. A. Reed，A. M. Rawlett，M. Kozaki，Y. Yao，R. C. Jagessar，S. M. Dirk，D.W. Price，J. M. Tour，D. S. Grubisha and D. W. Bennett，“Molecular Electronic Devices” in “Molecular Nanoelectronics”，Edited by M. A. Reed and Takhee Lee，American Scinetific blishers.
[30] PHYSICAL REVIEW LETTERS, VOL. 79, 13 (1997)