隨著積體電路元件的規模不斷縮小，這些電路中金屬內連線的特性對 RC 延遲
（電阻和電容）產生了重大影響。 Ta/TaN 是最常用的擴散阻擋層和附著層，其
電阻較高，加劇 RC 延遲效應。這一限制阻礙了它在先進的超細間距銅金屬化
製程中的應用。具有超薄膜厚度（1-2 奈米）的自組裝單層（SAM）是一種很有
前途的擴散阻擋層。本文研究了 2-HBITES (2-羥基苯基亞胺三乙氧基矽烷) 、
BITES (苯基亞胺三乙氧基矽烷)和 OTS (正辛基三乙氧基矽烷) 三種SAM作為金
屬內連線中潛在的擴散阻擋層。我們假設，具有不同的末端基團的 SAM 影響其
螯合釕並作為擴散阻擋層的能力。為了驗證這一點，我們在不同溫度下對
Si/Ox/Ru 和 Si/SAMs/Ox/Ru 樣品進行了快速熱退火（RTA）處理，並對薄膜電
阻、X 射線衍射和 縱深分析進行分析釕和矽之間的相變狀態。

As the scaling of IC components continues to shrink, the characteristics of
metal interconnects within these circuits significantly impact the RC delay (resistance
and capacitance). Ta/TaN, the most widely used diffusion barrier and adhesion layer,
has a high resistance, which contributes to the RC delay effect. This limitation hampers
its deployment in current ultra-fine pitch Cu metallization techniques. Self-assembled
monolayers (SAMs) with an ultra-film thickness (1-2nm) present a promising
alternative
as
diffusion
barrier
2-hydroxybenzylimine-triethoxysilane
layers.
Herein,
we investigated
(2-HBITES), benzylimine-triethoxysilane
(BITES) and n-octyltriethoxysilane (OTS) SAM as potential diffusion barrier in a
metal interconnect. We hypothesize that SAM with different terminal groups influence
their ability to inhibit ruthenium interdiffusion and improve the adhesion between
metal and low-k dielectric. To test this hypothesis, the Si/Ox/Ru and Si/Ox/SAMs/Ru
samples were treated via Rapid Thermal Annealing (RTA) at different temperatures. To
show SAM barrier failure, the state of phase transformation between ruthenium and
silicon was studied using sheet resistance, XRD, and depth profile.

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