利用射頻磁控鍍法研製鋯鈦酸鉛/鋯酸鉛異質多層膜

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研究生：	鐘賢文 Hsien-Wen Chung
論文名稱：	利用射頻磁控鍍法研製鋯鈦酸鉛/鋯酸鉛異質多層膜 Fabricated PZT(40/60)/PZO Hetero-Multilayers Using Radio Frequency Magnetron Sputtering Method
指導教授：	林樹均
口試委員:
學位類別：	碩士 Master
系所名稱：	工學院 - 材料科學工程學系 Materials Science and Engineering
論文出版年：	2004
畢業學年度：	92
語文別：	中文
論文頁數：	88
中文關鍵詞：	鋯鈦酸鉛多層膜、射頻磁控濺鍍、鐵電陶瓷薄膜
相關次數：	點閱：4 下載：0
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本實驗以射頻磁控濺鍍法鍍製 PZT(40/60)/PZO 異質多層膜，設計出不同週期數之等比例多層膜，以及兩材料不同厚度比例的非等比例多層膜，探討各種結構的結晶行為介電特性、漏電流性質、鐵電特性及抗疲勞特性。實驗所使用的基板為 Pt/Ti/SiO2/Si；以PZT(40/60) 當作第一層，可有效降低其上之 PZO 鈣鈦礦相結晶溫度，同時此成分具有優良的鐵電性及介電性；而 PZO 則具有極佳的抗疲勞性，可改善異質多層膜應用在白金電極上的疲勞性質。
在等比例多層膜方面，當週期數為1時，呈現反鐵電性質；週期數大於2之後的結構，則以鐵電性為主，且隨著週期數增加鐵電性愈佳；推測原因與界面有適當的擴散反應而形成具有鐵電性的介面。等比例多層膜在經過10的9次方反轉後，均無發生疲勞現象；介電常數隨著週期數的增加而上升，其值大於理論上兩材料電容串聯。當週期數達到6時，有本組實驗最佳鐵電性及介電性質。漏電流方面，等比例多層膜的各個條件均比 PZT(40/60) 單層膜來得小，應該與 PZO 具有較佳的抗漏電性而使薄膜整體的漏電流降低。
在非等比例多層膜方面，鍍膜週期數均為6；當dPZT : dPZO = 3:1時雖有最大的殘留極化量，但其經過106反轉就發生疲勞；而以dPZT : dPZO = 2:1的結構，可同時擁有很不錯的鐵電性、介電性，其介電值在1MHz頻率下為494，而 Pr、Ec 值分別為19.35 μC/cm2、49.17 kV/cm，而且經過10的9次方反轉後，其( P* - P^ )還保有初始值的90 %以上，達16.48 μC/cm2，為本實驗最佳參數，提高了 PZT 鐵電薄膜應用於白金電極上的可行性。

第一章 簡介…………………………………………………………….1
第二章 文獻回顧……………………………………………………….3
    2-1 鐵電材料在非揮發性記憶元件之應用………………………3
    2-2 鐵電記憶體之材料……………………………………………3
    2-3 極化疲勞的成因與機制………………………………………7
    2-4 現今異質多層鋯鈦酸鉛的研究………………………………9
第三章 實驗流程………………………………………………………18
    3-1 Pt/Ti/SiO2/Si 基板之準備………………………………18
    3-2 鍍製 PZT 及 PZO 薄膜……………………………………18
    3-3 白金( Pt )上電極之製作…………………………………19
    3-4 薄膜分析量測………………………………………………20
第四章 結果與討論……………………………………………………30
    4-1 單一成份鋯鈦酸鉛 PZT (40/60)……………………………30
    4-2 單一成分鋯酸鉛PZO…………………………………………35
    4-3 PZT/PZO 等比例異質多層膜…………………………………39
    4-4 PZT/PZO非等比例等比例異質多層膜………………………44
第五章 結論……………………………………………………………83
第六章 參考文獻………………………………………………………85

                                

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