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研究生： 曾嘉宏
Jia-Hung Tseng
論文名稱： 以射頻磁控濺鍍法製作鋯酸鉛鋇薄膜之研究
The Study of RF-Magnetron-Sputtered (PbBa)(PbZr)O3 Thin Film
指導教授： 吳泰伯
Tai-Bor Wu
口試委員:
學位類別： 碩士
Master
系所名稱： 工學院 - 材料科學工程學系
Materials Science and Engineering
論文出版年： 2000
畢業學年度： 88
語文別： 中文
論文頁數： 108
中文關鍵詞： 鐵電性 、順電性 、濺鍍 、鋯酸鉛鋇 、鎳酸鑭
外文關鍵詞： Ferroelectric, Paraelectric, Sputter, Lead Barium Zirconate (PbBa)ZrO3 (PBZ), LaNiO3 (LNO)
相關次數： 點閱：3  下載：0 
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    • 摘要
    在這篇論文中，我們將以射頻磁控濺鍍法鍍製鋯酸鉛鋇( (Pb2+1-xBa2+x)(Pb4+1-yZr4+y)O3, PBZ ) 薄膜材料，並對其成份的變化及控制作研究。利用(100)及(200)指向的鎳酸鑭(LaNiO3, LNO)作為底電極，使得鋯酸鉛鋇薄膜具有(100)及(200)的優選方向，而藉由變化靶材中氧化鉛的過量比例及基板的溫度則可控制鋯酸鉛鋇薄膜中鉛的含量。由於薄膜中四價鉛離子的含量會影響到(100)及(200)指向兩者間的強度差異，因此在本文中將建立一個結構及成份的模型，對此一現象作探討，而模型所模擬出的成份變化與利用鍵結能量所Fit出的結果是一致的。

    從實驗結果發現，薄膜的電性和結晶強度差異均與成份中四價鉛的含量有密切的關係，藉著將鋯酸鉛鋇薄膜中四價鉛的含量由0~0.12增加到0.2~0.22，可以使鋯酸鉛鋇薄膜由鐵電相轉變為順電相，在上述的調變範圍內，鋯酸鉛鋇薄膜均具有良好的電性，其漏電流可維持在10-7 (A/cm2)以下，而崩潰電場則可到550 (KV/cm)，至於介電常數、殘存極化量及矯頑電場則分別為350、17 (μC/cm2)及310 (KV/cm)。因此鋯酸鉛鋇薄膜很適合作為低漏電與高電荷儲存的FRAM應用。

    Abstract
    In this work, a new system of sputtered thin films with the composition of (Pb2+1-xBa2+x)(Pb4+1-yZr4+y)O3 (PBZ) were studied. A preferred (100) and (200) texture of PBZ films have been formed on the LaNiO3 (LNO) electrode due to the enhancement from the strong (100) and (200) texture of LNO. The Pb content of the films can be modulated by the excess PbO in the target and the change of substrate temperatures. A simulation model with the composition of the form, (Pb1-xBax)(Pb1-yZry)O3, is proposed to explain the intensity difference in (100) and (200) peaks depending on the Pb4+ content. The compositions obtained from the simulated results are consistent with those from the fitting of XPS spectrum of Pb 4f7/2.

    The electrical properties as well as the XRD intensity difference are closely related to the Pb4+ content in PBZ films. A phase transformation from ferroelectric to paraelectric occurs with increasing the Pb4+ content from 0~0.12 to 0.2~0.22 in the PBZ films. For the Pb4+ content less than 0.22, the film performs good electrical properties. The leakage current can be maintained below 10-7 A/cm2 and the breakdown electric field is as high as 550 KV/cm, along with dielectric constant of 350, remanent polarization of 17 μC/cm2 and coercive field of 310 KV/cm. Therefore, thin PBZ film is a promising candidate for low leakage and high charge storage applications in FRAM.

    Contents ABSTRACT I 摘要 II 誌謝 III CONTENTS V LIST OF FIGURE VIII LIST OF TABLE XII CHAPTER 1 INTRODUCTION 1 1.1 PRELUDE 1 1.2 MOTIVATION 2 CHAPTER 2 REVIEW 3 2.1 INTRODUCTION OF MICROWAVE PROPERTY 3 2.2 PROPERTIES OF LEAD BARIUM ZIRCONIUM OXIDE 5 2.3 DIELECTRIC PROPERTY 6 2.3.1 Polarization Mechanisms 6 2.3.2 Dielectric Constant and Dielectric Loss[37] 8 2.3.3 Dielectric breakdown and leakage current mechanism 8 2.3.4 Electrode 11 CHAPTER 3 EXPERIMENTAL METHOD 22 3.1 EXPERIMENTAL PROCESS 22 3.1.1 Target Preparation 22 3.1.2 Substrate Preparation 22 3.1.3 Film Deposition 22 3.1.4 Heat Treatment 23 3.1.5 Top Electrode Making 23 3.2 MEASUREMENT 23 3.2.1 Structure Identification 23 3.2.2 Compositional Analysis 23 3.2.3 Binding Energy Analysis 24 3.2.4 Film Thickness 24 3.2.5 Microstructure Observation 24 3.2.6 Electrical Measurement 24 CHAPTER 4 RESULTS AND DISCUSSIONS 35 4.1 CONTROL OF FILM COMPOSITION 35 4.1.1 The Effect of Sintering Temperature 35 4.1.2 The Influence of Targets with Excess PbO 36 4.1.3 The Effect of Sputtering Times 37 4.1.4 The Effect of Substrate Temperature 38 4.2 SIMULATION MODEL OF THE PBZ STRUCTURE 38 4.3 MICROSTRUCTURE 41 4.4 ELECTRICAL CHARACTERISTICS 42 4.4.1 I-t characteristic 42 4.4.2 I-V Characteristics 43 4.4.3 Dielectric Properties 44 4.4.4 P-E Characteristics 45 4.4.5 C-V Characteristics 46 4.4.6 Fatigue Properties 46 CHAPTER 5 CONCLUSION 90 REFERENCE 92

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