角解析光電子能譜及低能量電子繞射儀研究鉛薄膜在鍺(001)基底上之電子結構與薄膜性質

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研究生：	盧宇軒 Lu, Yu-Hsuan
論文名稱：	角解析光電子能譜及低能量電子繞射儀研究鉛薄膜在鍺(001)基底上之電子結構與薄膜性質 Studies of the electronic structures and thin film properties of Pb on Ge(001) by ARPES and LEED
指導教授：	唐述中 Tang, Shu-Jung
口試委員:
學位類別：	碩士 Master
系所名稱：	理學院 - 物理學系 Department of Physics
論文出版年：	2010
畢業學年度：	98
語文別：	英文
論文頁數：	81
中文關鍵詞：	角解析光電子能譜、低能量電子繞射儀、鉛、鍺
外文關鍵詞：	ARPES, LEED, Pb, Ge
相關次數：	點閱：3 下載：0
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我們成功的在 n型高摻雜的鍺(001)基底上製備原子平坦的鉛薄膜並利用高解析度的角解析光電子能譜研究鉛薄膜在鍺(001)基板上的電子結構，測量了4至16層的鉛薄膜(在Pb/Ge(001)-C(4 X 8)或C(4X8)和(3X6)混合的重構結構上)的量子井電子態。我們需要先在室溫下形成一層薄薄的Pb基底(Wetting Layer)得以讓Pb薄膜形成二維平坦的薄膜，所以我們也針對這樣的基底做了一系列的研究，也顯示了這一層薄Pb基底的重要性。位在鍺(001)基底□位置的量子井電子態可以成功的以Bohr-Sommerfeld量子化規則來計算出其量子井電子態初始能量和薄膜厚的關聯，我們發現量子井電子態的理論值與實驗值相當的符合,並且發現量子井電子態的鋒值的半高寬和鋒值能量位置有關。另外，我們也對4至13層的鉛薄膜進行的薄膜熱穩定的量測，從中我們觀察到鉛薄膜熱穩定溫度會隨薄膜的層數有高低震盪的現象(Bilayer Oscillation);並且發現加溫的過程中，鉛薄膜的結構會因為加熱而產生改變。最後我們利用低能量電子繞射儀來觀測鉛薄膜在鍺(001)基底上的原子排列情況，在Pb/Ge(001)的系統中，二維平坦的鉛薄膜是延著Pb(111)的方向所成長，並且與鍺基底產生了150 的旋轉。此外，兩個六角形Pb(111)領域同時存在，其中一個Pb(111)領域和另外一個Pb(111)領域相差了30°。

Atomically uniform Pb films on Ge(001) were successfully pre-pared at the thickness ranging 4-16 monolayer above a wetting layer, Pb/Ge(001) – C(4X8) or mixture of C(4X8) and 3X6. Angle Resolved Photoemission (ARPES) and low energy electron diffraction (LEED) were used to study the system. We found the wetting layer is necessary to form the flat 2D Pb films. The measurement of the thickness depen-dence of the electronic structures for Pb films on Ge(001) was per-formed and the peak positions of quantum well states were analyzed by Bohr-Sommerfeld quantization rule. The measured peak positions match the theoretically predicted values very well. We also found that the line width of quantum well peaks become narrower within the energy range from -2 eV to -1 eV. It is due to the observed interesting behavior that quantum well state of Pb doesn’t interact with Ge heavy-hole (HH) bands. The thermal stability of Pb film was studied by annealing the Pb films and measuring the thermal stability temperature. The stability temperatures exhibited a bilayer oscillation. The annealing process rearranges the structure of Pb films. From the measurement by LEED, we discovered the trace of the cause to the resulting Pb(111) film rotated 15°with respect to the dimer direction of Ge(001) substrate.

Contents


Abstract (Chinese Version) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i
Abstract (English Version) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ii
Acknowledgement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iii
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iv
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Photoemission spectroscopy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Theory of Photoemission Process . . . . . . . . . . . . . . . . . . . . . . . 6
3 Angle-Resolved Photoemission . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Photoemission Spectra . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . .11
5 Ultra High Vacuum . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
6 Source of Photon . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6.1 Helium Lamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6.2 Synchrotron Radiation . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
7 Energy Analyzer. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
7.1 Electron Detector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
7.2 Analyzer Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
7.3 Resolution . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Surface Systems and Thin Films . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
1 Crystal Lattices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
1.1 Reciprocal Space . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
2 Surface Crystal Lattices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3 Low Energy Electron Diffraction . . . . . . . . . . . . . . . . . . . . . . .27
4 Film Growth . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.1 Film Growth . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.2 Thickness of Thin Film . . . . . . . . . . . . . . . . . . . . . . . . . . 34
5 Surface States . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
6 Quantum Well States . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
6.1 The Bohr-Sommerfeld Phase Model . . . . . . . . . . . . . . . . 37
6.2 Quantum Number . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
7 Thermal Stability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
8 Thickness-Dependent Oscillations in Pb . . . . . . . . . . . . . . . . . 44
Pb Film on Ge(001) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
1 Experiment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
2 Wetting Layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
3 Quantum Well Spectroscopy . . . . . . . . . . . . . . . . . . . . . . . . . . 54
3.1 Film Thickness Determination . . . . . . . . . . . . . . . . . . . . . 54
3.2 Energy Level Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
4 Thermal Stability Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 65
5 Atomic Structure of Pb Film . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .77
Bibliography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .79

                                

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