本研究利用奈米壓印技術搭配奈米機電製程取代傳統奈米線製作方式，如電子束曝光搭配SOI晶圓的製作方式，製作出具奈米線陣列通道的離子感應場效應電晶體並研究其特性，相較於傳統矽奈米線，本研究之結構，最終會保留部分結構連接奈米線與矽基板，在研究中稱此部分為”頸”，藉由”頸”對奈米線提供物理性支撐的方式改善元件良率，並在元件電流輸出上，也會有一定程度的貢獻。經過一連串的製程所製作出的奈米陣列通道，其最終線寬約為90~200nm。奈米線陣列通道製作完成後，將利用掃描式電子顯微鏡與穿隧式電子顯微鏡觀察其通道剖面圖。
對於一些主要的元件特性其改善原因，來自於奈米陣列通道的特殊幾何結構；因為奈米線陣列通道提供了大量的邊角於元件通道內亦或是感測區域內，在邊角區域的半導體層將會存在較大電場，可以有效地改善元件基本電性，且若是應用在感測器上，也因為邊角效應的關係，能放大表面待測物對通道內電場的影響，換言之，通道內邊角的存在能增加了平帶電壓的偏移(感測度)。且具奈米線陣列通道的離子感應場效應電晶體相較於傳統式的離子感應場效應電晶體都展現出較好的元件特性，例如較低的臨界電壓、次臨界擺幅和較高的開關電流比。進一步而言，具備較高圖案密度的奈米線陣列通道離子感應場效應電晶體，因在通道內有更多的邊角存在，亦具備較好的感測特性。在文章中，結構對元件特性改善原因將被討論。
根據本研究結果，在未來利用奈米壓印技術可實現具高性能的生物感測器。

This work focuses on the characteristic of ion sensitive field effect transistors (A-ISFETs) pH sensors with nanowires channel manufactured by integrating nano imprint technology (NIL) and NEMS process, replacing the silicon on insulator wafer and electron beam lithography to fabricate the nanowires. Comparison of the conventional nanowires, the arrayed nanowires with the neck that provide the physical support to the nanowires and output current contribution, raising the yield and performance of devices. The arrayed nanowires, made of line at about ∼90–200nm, were fabricated by NIL; followed by the manufacturing of the ISFETs and investigated by scanning electron microscopy (SEM) and tunneling electron microscopy (TEM). The main properties is significant improved by the particular geometrical structure in the sensing area, due to the corner effect, there exist higher electrical field in the corner region of semiconductor layer under same gate bias.
The ISFETs sensors with arrayed nanowires, all exhibited better sensing properties than the single one did, due to the corner effect, enlarging the affect from the analyte which is bind on the surface of sensing membrane. In other words, there are a lot corners exist at the sensing area (channel) from the arrayed nanowires structure. Furthermore, the sensing properties of A-ISFETs with higher pattern density exhibited higher sensitivity, lower hysteresis, and lower drift properties than the one with lower pattern density did. The effects of arrayed nanowires structure would be investigated. As the research, using the NIL technique, the fabrication of sensor for high performance biochemical sensing applications can be realized in the future.

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