由於近年的科技快速進步，光偵測器在生活中的應用日漸增加，使的人們對於它的效能跟速率要求也隨之提升，因此在標準製程條件下設計出響應度高且高速率的光偵測器為本論文所追求的目標。
本文的光偵測器是利用TSMC 0.18um SiGe BiCMOS製程來實現，對異質接面雙載子光電晶體(Heterojunction Phototransistor，HPT)的改進，且使用之前實驗室提出的N-type Body Strapping理論，並藉由外加一些電路或是元件的方式改善性能，特別是針對元件的反應速度上做改善。先利用Silvaco的atlas軟體模擬來設計，並藉由下線實作晶片與量測來得到模擬數據的驗證。

Due to the rapid development of technology, the demand of photodetectors has increased dramatically, and people keep pursuing devices with better performance. The purpose of this thesis is to design high-speed heterojunction phototransistors with outstanding responsivity under standard manufacturing process provided by TSMC.
In this thesis, 0.18um SiGe BiCMOS standard process provided by TSMC is applied.
In the first part of this thesis, we will discuss the properties of heterojunction phototransistors (HPT) with n-type doping body strapping which was proposed in our laboratory, from both TCAD simulation and actual measurement.
The second part of the thesis is the design of some approaches in order to enhance the performance of the HPT device mentioned in part one. This work mainly focuses on improving response speed. And at the end of the thesis, we verified the feasibility of the novel device through the tape-out and actual measurement.

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