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研究生： 謝翠玲
Hsieh, Cuei-Ling
論文名稱： 毫米波振盪器設計
Design of Millimeter-Wave Oscillators
指導教授： 劉怡君
Liu, Jenny Yi-Chun
口試委員: 孟慶宗
Meng, Chin-Chun
郭建男
Kuo, Chien-Nan
徐碩鴻
Hsu, Swan S.H.
朱大舜
Chu, Ta-Shun
學位類別： 博士
Doctor
系所名稱： 電機資訊學院 - 電機工程學系
Department of Electrical Engineering
論文出版年： 2018
畢業學年度： 107
語文別： 英文
論文頁數： 101
中文關鍵詞： 毫米波 、振盪器 、四相位振盪器
外文關鍵詞： Push-Push, Triple-Push
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    • 此論文介紹了三種毫米波振盪器，此三種振盪器均採用90-nm CMOS製程並適用於毫米波系統。

    第一顆振盪器為push-push振盪器，其電路架構為一顆cross-coupled pair振盪器，後面接著一顆倍頻器，振盪器本身振盪在55 GHz，而倍頻器則將頻率推到112 GHz，此電路在1-MHz偏移頻率下有 -93 dBc/Hz的相位雜訊表現。

    第二顆振盪器為triple-push振盪器，其電路由兩組環形振盪器反向對接而成，此兩組環形振盪器反接的結構，能夠提高整體電路的相位雜訊的表現；並利用電晶體尺寸之差距，來提高訊號的非線性度，進而提昇三倍頻的輸出功率。此電路能夠提供210 GHz的輸出訊號，並在1-MHz的偏移頻率下有-88 dBc/Hz的相位雜訊表現。

    第三顆振盪器為四相位振盪器，此電路架構以傳統的P-QVCO為基礎，在傳統之P-QVCO中增加一組額外的耦合路徑。此耦合電路之電晶體，會與原本電路之耦合電晶體組成一組差動對。此差動對能夠消除共模雜訊，進而增加相位雜訊的表現。此電路能提供69 GHz的四相位訊號輸出，其相位雜訊在1-MHz的偏移頻率下有¬-105 dBc/Hz的成果。並且量測出I/Q訊號的相位差小於1º，振幅差為0.47 dB。

    This paper introduces three millimeter-wave oscillators. All of these works are implemented under a 90-nm CMOS process and are suitable for millimeter-wave systems.
    The first oscillator is a push-push oscillator, which contains a cross-coupled pair oscillator, followed by a frequency doubler. This oscillator oscillates at 55 GHz, and the frequency doubler pushes the final output signal to oscillate at 112 GHz. The phase noise is -93 dBc/Hz at the 1-MHz offset from the output frequency.
    The second work is a triple-push oscillator. This work is formed by the two three-stage ring oscillators. These two ring oscillators are reversed coupled. The reverse structure can improve the performance of the phase noise and the signal nonlinearity; and further increases the third harmonic signal output power. This circuit can provide an output signal oscillating at 210 GHz, and the phase noise performance is -88 dBc/Hz at the 1-MHz offset from the oscillation frequency.
    The third oscillator is a quadrature oscillator. The circuit architecture is based on a traditional P-QVCO, in which an additional coupling path is added to the P-QVCO. This new coupling path is in a reversed direction when compared with the original coupling path. The transistors of the original and reversed coupling path form as differential pair elements. This differential pair can eliminate common mode noise, then, increasing the phase noise performance. The oscillation frequency of this work is at 69 GHz. The phase noise -105 dBc/Hz at 1-MHz offset frequency from the oscillation frequency. The measured phase difference of the I/Q signals is less than 1º, and the amplitude difference is 0.47 dB.

    摘要 i Abstract ii Contents i List of Figures iii List of Tables vi Chapter 1 Introduction 7 1.1. Motivation 7 1.2. Thesis Organization 8 Chapter 2 A Push-Push Oscillator in 90-nm CMOS 9 2.1. Introduction of Push-Push Oscillator 9 2.2. Proposed Circuit 11 2.2.1 Circuit Architecture 11 2.2.2 Inductor Design 13 2.3. Tuning Range 15 2.4. Design Consideration & Chip Implementation 16 2.5. Measurement Result 17 2.6. Conclusions 21 Chapter 3 A Low Phase Noise 210 GHz Ring-Based Tripled-Push Oscillator in 90-nm CMOS 22 3.1. Introduction of Triple-Push Oscillator 22 3.2. Proposed Direct Coupled LC Triple-Push Ring Oscillator 26 3.3. Third Harmonic Signal Generation, Extraction, and Unwanted Signal Rejection 30 3.4. Tuning Range 37 3.5. Phase Noise 42 3.6. Design Consideration & Chip Implementation 47 3.7. Measurement Result 52 3.8. Conclusions 59 Chapter 4 A 67 GHz Dual Injection Quadrature VCO with -182.9 dBc/Hz FOM in 90-nm CMOS 61 4.1. Introduction of QVCO 61 4.2. Proposed Dual Injection QVCO 68 4.3. Current Phasor Analysis 71 4.3.1 Current Phasor of P-QVCO 72 4.3.2 Current Phase of Proposed Circuit 73 4.4. Phase Noise 74 4.4.1 Tank Quality Factor 74 4.4.2 Differential Coupling Element 75 4.4.3 Cyclo-stationary Noise source 77 4.5. Design Consideration & Chip Implementation 80 4.6. Measurement Result 84 4.7. Conclusions 90 Chapter 5 Conclusions and Future Works 92 5.1. Conclusions 92 5.2. Future Works 92 Bibliography 94

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