近年來，三五族化合物半導體蓬勃發展，無論是在發光二極體或異質接面雙極性電晶體均有極大的貢獻，由於異質接面雙極性電晶體具有較佳的頻率、高增益值及高功率特性，近年來已被廣泛應用在數位及行動通訊上。其中，在功率轉換上電晶體會以熱以及光的形式溢出，導致輸入功率始終大於輸出功率。有鑑於此，在本論文中將會嘗試將兩層量子井置入電晶體的基極層以提升光輸出特性，以同時達到具備電信號輸出與光信號輸出之元件。
本文中，我們製作出一般的標準異質接面電晶體並藉此確認三端元件的基本特性與製程流程，並將之轉移至發光電晶體的製作。應用該製程，我們研製出一個磷化銦鎵/砷化鎵發光電晶體，並針對發光電晶體的表面鈍化方式作深入探討。在本研究中，我們發現射極面積效應，將影響元件的理想因子，及元件的高頻特性。

In recent years, III-V compound semiconductor devices have been widely developed and applied to the applications of high frequency, high power and light emitter, particularly, the structure of heterojunction bipolar transistors (HBT). However, the efficiency of power conversion of HBTs is small due to heating and lighting effects, which make the input power always larger than the output power. As a result, we use the HBLET structure with embedded two quantum wells in base region to improve its optical properties.
In this work, a standard HBT was first fabricated to fix the process parameters for later fabrication of InGaP/GaAs HBLET. The HBLETs with the different passivation methods were demonstrated and discussed. Our results show that the emitter area effect strongly affects the base ideality factor and the optical response.

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