隨著電子產品朝向輕、薄、短、小的目標與使用者的需求越來越高，電子封裝結構體內部各元件的尺寸也隨之縮減。為了大幅減少傳統二維式封裝技術所造成的缺點與限制，近年來，封裝產業界與研究單位均積極投入心力於三維式封裝技術的發展。在三維式封裝領域中，直通矽晶穿孔(Through Silicon Via, TSV)技術可有效提供晶片間在厚度方向之電訊連接，進而縮短其傳輸距離，成為該領域中較為突出且重視的一項技術。然而幾何尺寸的縮小造成結構中材料間的熱膨脹係數不匹配，導致在溫度負載下造成的散熱問題與熱應力集中等現象，仍是目前所面臨且需要克服的問題。
　　本研究主要目的在建立多層晶片堆疊之直通矽晶穿孔封裝體結構，以有限元素模型進行熱循環分析，並了解在承受溫度負載的情況下，各結構之力學行為之分析結果。透過文獻中對於該結構進行熱循環測試之實驗結果，找出其結構發生破壞的位置，同時驗證分析結果之正確性。為使有限元素模型在選擇材料與幾何尺寸的改變下，觀察其對於整體結構的影響，本研究透過參數化分析進行相關探討，並找出各參數間對於結構之影響程度。
　　透過文獻中銅導線分析與實驗相互驗證其可靠度之結果，本研究亦將以確立過網格密度之有限元素模型進行各項細部分析，找出其全應變值代入Engelmaier關係式以預估其疲勞壽命週期，最後以實驗所得之結果進行驗證。透過此方法將可有效預估的類似封裝結構內銅導線之可靠度壽命，作為日後相關研究中進行可靠度分析之參考依據。

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