本實驗以原子層化學氣相沈積法 (Atomic layer chemical vapor deposition, 簡稱ALCVD) 鍍製Al2O3 和HfO2高介電薄膜，因為ALCVD具有極佳的厚度控制能力、均勻覆蓋能力以及低鍍膜溫度等優點，為許多鍍製超薄薄膜方法中最具吸引力的。我們在鍍製Al2O3 和HfO2薄膜時是採用TMA(Trimethylaluminum) 作為Al的先趨物，TEMAH (Tetrakis (ethylmethylamido) Hafnium) 作為Hf的先趨物，兩者皆以H2O作為氧化劑。
本實驗使用MIM（Metal-Insulator-Metal）電容結構，以避免MIS(Metal-Insulator-Silicon)結構於介面形成SiO2而降低整個電容值的問題。主要使用的底電極為Pt、PtOx、TiN三種基板，採用Au、Ti-Au為上電極。本實驗研究重點在於In-situ電漿處理底電極表面對後續ALCVD 之Al2O3、HfO2薄膜成長的影響。我們改變電漿成分以探討其對底電極表面形貌和MIM電容電性上的影響。利用TEM和XPS分別觀察薄膜與底電極介面結構及鍵結情形。另外，我們也做了不同熱處理條件，探討熱處理溫度和氣氛對Al2O3 和HfO2薄膜電性上的影響。
本實驗成功利用In-situ電漿表面處理，增加底電極表面之-OH鍵，成長均勻的Al2O3 和HfO2於Pt、PtOx底電極上。當Al2O3 和HfO2薄膜厚度為7.3nm，漏電流可控制在1V工作電壓下小於1x10-7 ~1x10-8 A/cm2以下。

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