本論文是光學吸收增益奈米柱陣列設計銅鋅錫硒太陽能電池。這項研究還提出了製造基於納米棒的銅鋅錫硒太陽能電池的理想工藝。時域有限差分模擬顯示隨著載子流生成的增強，周期性與孔隙率也跟著被優化；模擬結果顯示，由於場強度集中於銅鋅錫硒太陽能電池奈米棒的中央，電流密度比起對照組（45.08 mA/cm2）要提升了4.41%（47.16 mA/cm2），實際應用時元件效率卻僅有1.36%，顯示出銅鋅錫硒太陽能電池奈米棒於氧化鋁奈米模板孔隙中的形成機制與在正常平面電極上的機制不同。為了得到均相的銅鋅錫硒太陽能電池相變化，需要延長硒化反應的時間。

This thesis is based on Cu2ZnSnSe4 (CZTSe) thin film solar cells focusing on designing new strategies in light harvesting to solve the critical issues of insufficient light absorption by FDTD Simulation. This research also stated fancy process to fabricate nanorods based solar CZTSe cells. Finite difference time domain (FDTD) simulation optimized the periodicity and porosity according to the carrier generation enhancement. The simulation results showed that 4.41% increment of JSC of 47.16 mA/cm2 compared with 45.08 mA/cm2 of the thin film counterpart due to concentrated field intensity at the center of the CZTSe NRs. Practical application by AAO template and electrodeposition method resulted the devices efficiency of only 1.36 %. Mechanism of CZTSe NRs formation inside the of pores of AAO templates turned out to be different from those on regular planar electrodes. Prolonged selenization duration should be applied for homogeneous CZTSe phase transformation.

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