本論文為在Ga的K吸收邊﹙Ek=10369eV﹚附近，研究 GaAs單晶之三光與二光繞射異常精細結構﹙Diffraction anomalous fine structure，
DAFS﹚的差異。主要是利用同步輻射能量可調的特性，改變能量，並在滿足三光複繞射﹙000,222,33-1 ﹚條件下，分別同時量測其繞射光和螢光的強度，包括晶體的Ga面﹙000,222,33-1 ﹚和As面﹙000 ,-2-2-2,33

-1﹚，當入射之X光能量接近晶體中Ga原子之K吸收邊能量時，即所謂共振能量時，可發現As面的複繞射相位與強度分佈均出現明顯的變化，但Ga面則無此變化，故利用兩者有明顯差異的特性，我們以動力繞射理論計算三光強度極值和二光強度差之比值，由理論計算配合實驗結果得知原子散射因子的實部，並計算出 與 ，再將兩者由k空間轉換到R空間並加以比較，而峰值間所代表的意義即是原子間的距離。

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