場效電晶體重金屬砷感測器製造｜國立清華大學博碩士論文庫

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研究生：	賽蘇爾 Tatavarthi, Sai Sudheer
論文名稱：	場效電晶體重金屬砷感測器製造 Fabrication of Heavy metal ion FET based sensor for detecting arsenite
指導教授：	王玉麟 Wang, Yu-Lin
口試委員:	李昇憲 Li, Sheng-Shian 林宗宏 Lin, Zong-Hong 陳榮治 Chen, Jung-Chih
學位類別：	碩士 Master
系所名稱：	工學院 - 奈米工程與微系統研究所 Institute of NanoEngineering and MicroSystems
論文出版年：	2020
畢業學年度：	108
語文別：	英文
論文頁數：	46
中文關鍵詞：	砷離子、離子選擇膜、延伸式閘極場效電晶體、重金屬檢測
外文關鍵詞：	Arsenite, Ion selective membrane, extended gate FET, Heavy metal
相關次數：	點閱：5 下載：0
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砷是毒性最高的重金屬之一，它在地下水中的含量較高。若人經由食物或水長期接觸砷，會提升罹患多種心臟病的機率，並導致癌症。砷有兩種氧化態，一種是三價砷（As3 +），一種是五價砷酸鹽（As5 +）。 As（III）是一種無機形式，比砷酸鹽（As2O5）毒性更強。砷離子可以通過不同的實驗方法（例如ICP-MS）進行檢測。 ICP-MS中砷的檢測極限為0.05µg / L（10-10 M）。儘管這些實驗方法可用於檢測砷離子，但它非常複雜、昂貴且耗時。我們在這項研究中開發了一種檢測砷離子（As2O3，As（III））的方法。砷離子感測器的動態範圍從10-10M到10-5M。我們開發用於檢測亞砷酸鹽的感測器尺寸非常小、易於製造、靈敏度更高且檢測時間更短。該砷離子傳感器和ICP-MS具有相同的檢測極限，即10-10 M。此感測器具有高於理想能斯特方程式（Nernst slope）的靈敏度，且不受干擾離子的影響。這項研究還探討了不同表面修飾的用法以增加傳感器響應。

Arsenic is one of the heavy metal which is most toxic. It is present at higher levels in underground water. The long term exposure of food or water to arsenic will cause several heart diseases and also leads to cancer. Arsenic forms in two oxidation states, one is Arsenite (As3+) a trivalent form and Arsenate (As5+) a pentavalent form. As (III) is an inorganic form and is toxic than Arsenate (As2O5). The Arsenic ion can be detected by different laboratory methods such as ICP-MS. The detection limit of ICP-MS for Arsenic is 0.05µg/L (10-10 M). Though these laboratory methods can be used for detecting the arsenic ion but it is very complex, costly and time consuming. We developed a methodology in this research for detecting Arsenite ion (As2O3, As (III)). The dynamic range of the arsenite ion sensor ranges from 10-10M to 10-5M. The sensor which we developed for detecting Arsenite is very small in size, easy to fabricate, higher sensitivity and takes less detection time. This Arsenite ion sensor and ICP-MS has same detection limit i.e., 10-10 M. The sensor shows sensitivity higher than the Ideal Nernst slope. The sensing characteristics are not affected by the interfering ions. This research also discusses about the method used for surface functionalization in order to increase the sensor response.

Contents
ABSTRACT    II
ACKNOWLEDGEMENT    III
Chapter 1 INTRODUCTION    1
Chapter 2 LITERATURE REVIEW    3
2.1 Arsenic    3
2.2 Traditional Methods for ion detection    4
2.3 Potentiometric sensors    5
2.4 Arsenite Ion selective membrane(ISM)    9
2.5 Ion Selective FET    10
Chapter 3 PREPARATION AND DESIGN OF EXPERIMENTS    15
3.1 Extended gate ISMFET fabrication    15
3.2 Ion Selective Membrane Preparation    16
3.3 Measurement method    18
Chapter 4 RESULTS AND DISUCSSIONS    20
4.1 Illustration for sensor mechanism    20
4.2 Sensor test without ISM    21
4.3 Arsenite ion test by extended gate ISMFET    23
4.4 Selectivity and Interfering Ion test comparison    28
Chapter 5 SURFACE FUNCTIONALISATION    32
5.1 Surface Modification:    32
5.2 Contact angle measurement:    33
5.3 Sensor test after surface modification:    34
Chapter 6 CONCLUSION    42
REFERENCES    43

 
LIST OF FIGURES
Figure 1 Measurement setup of potentiometry using ion selective electrode[12]    6
Figure 2 Structure of Arsenite Ionophore I(5, 10, 15, 20- tetrakis (4-methoxyphenyl) porphyrine cobalt(II)    10
Figure 3 Schematic representation of ISFET[21]    11
Figure 4 Schematic representation of ISMFET    12
Figure 5 The extended gate chip with two openings separated by a short gap    16
Figure 6 Extended gate ISMFET structure shows the opened area of the electrodes and the position of ISM immobilized.    17
Figure 7 Structure of extended gate As-ISMFET.    18
Figure 8 The portable sensor system showing the ISMFET sensor connected to handheld device.    19
Figure 9 Current gain versus different kinds of test solutions by extended gate As-ISMFET    22
Figure 10 Current gain versus different arsenite concentrations without ISM    23
Figure 11 Current gain versus time when in 0.02X PBS by extended gate ISMFET    24
Figure 12 Real time detection of arsenite from 10-12 M to 10-5 M.    25
Figure 13 Current gain versus different arsenite concentrations with ISM and the slope of linear region is shown.    25
Figure 14 Current gain versus different Vg. The slope of gain vs Vg is shown.    26
Figure 15 Voltage vs different concentrations of As3+ prepared in 0.02X PBS arranged from Figure 13 and Figure 14. The slope of Effective Vg vs concentration is shown.    27
Figure 16 Current gain  vs different concentration of As3+ comparing with Cd2+ and Pb2+ through SSM. Each solution was prepared in 0.02X PBS.    28
Figure 17 Current gain vs As3+ in 0.02X PBS, 10-5M (NO3)2 and 10-5M Cd (NO3)2 through FIM.    29
Figure 18 Current gain Vs different concentration of As3+ and arsenate in 0.02X PBS    30
Figure 19 Extended gate As-ISMFET sensor response measured in 0.02X PBS and 0.1X PBS    31
Figure 20 Contact angle measurement before PBS conditioning    33
Figure 21 Contact angle measurement after PBS conditioning    34
Figure 22 Current gain versus time  by extended gate As-ISMFET after PBS conditioning.    35
Figure 23 Real time detection of arsenite concentration from 10-12 M to 10-5 M after PBS conditioning.    36
Figure 24 Current gain versus different arsenite concentrations with ISM and the slope of linear region is shown    37
Figure 25 Current gain versus different Vg. The slope of gain vs Vg is shown.    38
Figure 26 Voltage Vs different concentrations of As3+ prepared in 0.02X PBS arranged from Figure 24 and Figure 25. The slope of Effective Vg vs concentration is shown.    40

 
LIST OF TABLES
Table 1 Comparison of sensor response before and after conditioning    41


                                

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