本論文運用離子佈植的方法，將 Cu 離子佈植入 RuO2 奈米線中
，成功合成銅摻雜 RuO2 奈米線，離子佈植之後接著進行退火熱處理，用以修復離子佈植時所產生的損傷。論文主題在於了解不同劑量的銅離子對於 RuO2 奈米線室溫電性的影響；以及對於 RuO2 奈米線結構的影響。實驗所用的分析儀器包括：掃描式電子顯微鏡－分析佈植前後奈米線表面形貌的變化、穿透式電子顯微鏡－分析銅摻雜 RuO2 奈米線的晶體結構、X 光能量分散光譜－成份分析以及元素的定量、超導量子干涉磁量儀－研究銅摻雜 RuO2 奈米線磁性質變化；以及TEM-STM 系統－兩點量測技術，量測奈米線在室溫時的電性。
我們觀察到佈植 Cu 離子會影響 RuO2 奈米線的結構，並且隨著佈植劑量的增高，RuO2 奈米線被破壞的情況也越嚴重。運用 EDS定量各不同佈植劑量奈米線 Cu 之成分百分比，發現隨著佈植劑量的增加，在銅摻雜 RuO2 奈米線中 Cu 成分百分比確實增加，並利用 X 光能量分散光譜做成之成份分佈影像圖（ EDS-mapping ）來觀察 Cu 在奈米線中分佈的情況，發現 Cu 在奈米線中並沒有特別聚集的現象。利用 TEM-STM 系統量測銅摻雜 RuO2 奈米線室溫的電性，發現奈米線的電性受到 Cu 離子佈植的影響，使得電阻率變高，而退火熱處理之後因為晶格的回復導致電阻率的下降。所量測到的電阻率變化，最後與快速傅立葉轉換的影像處理方法做結合，可以合理的解釋退火熱處理對於電阻率的影響。最後利用超導量子干涉磁量儀比較 Cu 佈植前後奈米線磁性的變化，發現其反磁訊號的增強。

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