二維材料因結構與電性特殊，已經有諸多二維材料在電晶體相關的研究，本次研究目的在模擬以二硫化鉬(MoS2)作為通道材料的頂閘極電晶體，建立物理模型用於模擬電晶體的電流與電壓特性，過程使用Matlab 進行數值計算，利用牛頓–拉弗森法求解帕松方程以及飄移擴散模型，將此半經典模型與接面穿隧模型結合，來考慮蕭特基接觸對電流的影響，最後評估模型的合理性，再與我們實驗室的實驗數據進行對比分析。

The unique structural and electrical properties of two-dimensional
materials have led to extensive research on various two-dimensional materials transistors. The study aims to simulate a top-gate transistor using Molybdenum disulfide (MoS2) as the channel material and establish a physical model for simulating the current-voltage characteristics of the transistor. Numerical calculations were performed using Matlab, and the Newton-Raphson method was employed to solve the Poisson equation and drift-diffusion model. This semi-classical model was then combined with the junction tunneling model to account for the impact of Schottky contacts on the current. Finally, the reasonableness of the model was evaluated and compared with experimental data from our
laboratory for analysis.

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