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研究生： 宋孟勳
Meng-Shiun Sung
論文名稱： 利用電漿輔助化學氣相沈積多階段製程合成奈米碳管與增進場發射特性之研究
Enhanced field emission characteristics of carbon nanofibers by multi-stage growth process
指導教授： 柳克強
Keh-Chyang Leou
蔡春鴻
Chuen-Horng Tsai
口試委員:
學位類別： 碩士
Master
系所名稱： 原子科學院 - 工程與系統科學系
Department of Engineering and System Science
論文出版年： 2008
畢業學年度： 96
語文別： 中文
論文頁數： 97
中文關鍵詞： 奈米碳管/奈米碳纖維 、電感式電漿輔助化學氣相沈積 、場發射元件 、多階段製程
外文關鍵詞： CNT/CNF, ICP-CVD, Field emission device, multi-stage process
相關次數： 點閱：2  下載：0 
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    • 奈米碳管材料所具有獨特的結構，極佳的機械、熱傳導、化學穩定性與其高深寬比之特性等使其應用潛力極為廣泛，可應用於結構複合材料、儲能材料、奈米導線、奈米探針、場發射元件等。
    　　利用電感式電漿輔助化學氣相沈積( ICP-CVD )方法可以大面積成長以及準直性的奈米碳管，在較低的製程溫度( T < 500 ℃)，適合應用在顯示器元件的玻璃基板上。增加場發射特性的方法有二點：一是減少奈米碳管在場發射過程中的屏蔽效應( screen effect )以降低起始電場( turn-on field )；以及增加場發射電流的均勻度(uniformity)和穩定性(stability)。
    本研究利用多階段的電漿處理與奈米碳管成長製程來達到此目標。首先藉由電漿前處理來控制催化劑密度，以進一步控制奈米碳管之密度，以減少屏蔽效應對場發射特性不良的影響。再利用電漿後處理縮小碳管頂端的催化劑。使得奈米碳管呈現尖錐狀，同時增加奈米碳管以及基板表面的接著性。接著第二階段的奈米碳管再成長製程，使奈米碳管利用頂端縮小的催化劑成長直徑較小的奈米碳管，以增加奈米碳管的長徑比。再利用調變後處理以及再成長的參數，使其場發射特性達到最佳化。
    在結果部分，本研究成功發展多階段製程系統在玻璃基板上成長奈米碳管；有效的控制奈米碳管密度以及降低起始電場(從22.68 V /um降到7.16 V /um)，達到增進場發射特性的目的。

    Direct synthesis of vertically aligned CNFs has been successfully fabricated on display glass substrates at low temperature (< 500 ℃) by inductive couple plasma-enhance chemical vapor deposition (ICP CVD). Such process technique can be easily integrated with micro-fabrication process and can be scaled up for large size substrates. How to decrease the screen effect and turn-on field and increase the uniformity of CNFs is the way to enhance the field emission characteristics.
    This study used multi-step growth process and plasma treatment to achieve the goal. First, control the density of CNFs by plasma pre-treatment which controlling the size and density of catalytic nanoparticles. Second, diminish the size of catalyst which staying in the tip of CNFs by plasma post-treatment. CNFs exhibit spindt type and increased the adhesion between CNFs and substrate. Then, re-grow small diameter of CNFs on treated catalyst which stay in the tip of CNFs to increase aspect ratio. Optimize the post-treatment and re-growth parameter to enhance the field emission characteristics.
    This study succeeded to develop multi-step growth process on glass substrate and enhance the field emission characteristics by integrated and optimized to control the size and density of CNFs and decreased turn-on field from 22.68 V / um to 7.16 V / um.

    摘 要 i Abstract ii 目 錄 iii 圖 目 錄 v 表 目 錄 ix 第一章 緒 論 1.1 奈米碳管的簡介 1 1.1.1 奈米碳管的成長方式 3 1.1.2 奈米碳管成長模式與機制 4 1.2 奈米碳管場發射的應用 6 1.3 研究動機 8 第二章 文獻回顧與研究方法 2.1 利用電漿輔助化學氣相沉積系統成長奈米碳管 11 2.1.1 電漿前處理製程 12 2.1.2 電漿後處理製程 14 2.2 奈米碳管多階段製程以及場發射特性的改變 16 2.2.1 單根奈米碳管多階段製程 17 2.2.2 多階段製程成長大面積奈米碳管以及場發射特性的影響 18 2.2.3 文獻回顧結果與討論 23 2.3 研究目的與方法 25 2.3.1 試片製備方式 26 2.3.2 前處理製程 27 2.3.3 後處理製程以及再成長製程 27 2.3.4 場發射量測 28 第三章 實驗設備與場發射原理 3.1電感式耦合電漿輔助化學氣相沉積系統 29 3.1.1 電感式耦合電漿源機台 30 3.1.2 真空系統以及壓力控制 31 3.1.3 溫度控制與量測以及氣體流量的控制 31 3.2 場發射基本原理 32 3.2.1 富爾-諾罕（Fowler - Nordheim）理論 33 3.2.2 奈米碳管場發射量測 34 3.3 場發射量測機台 36 3.4 探針式場發射量測 37 3.4.1 探針式場發射量測模型 39 3.4.2 探針式與平板式場發射量測結果與計算程式驗證 41 3.4.3 場增強因子(刍汹)的修正 44 3.4.4 不同尺寸探針場發射量測結果以及程式計算 47 第四章 實驗結果與討論 4.1 實驗方法 51 4.2 電漿前處理製程與成長結果 52 4.2.1 電漿前處理時間的影響 52 4.2.2 不同電漿前處理製程的影響 55 4.2.3 催化劑X光能量分散成份分析儀( EDX )分析 57 4.3 電漿後處理製程 59 4.3.1 不同電漿後處理製程時間的影響 59 4.4 奈米碳管再成長製程 62 4.4.1 臨場奈米碳管再成長製程 62 4.4.2 臨場奈米碳管再成長製程場發射特性量與模擬分析 65 4.4.3 藉由臨場奈米碳管再成長製程增進場發射特性 71 4.4.4 非臨場奈米碳管再成長製程 73 4.4.5 非臨場奈米碳管再成長製程場發射特性量測與模擬分析 77 4.5 奈米碳管再成長TEM影像 83 第五章 總結與未來展望 5.1 實驗結果總結 85 5.1.1 奈米碳管多階段製程 85 5.1.2 場發射特性影響探討 86 5.1.3 場發射因子(刍)模擬結果探討 87 5.1.4 場發射結果以及其應用 88 5.2 未來展望 89 5.2.1多階段成長奈米碳管製程各項統計分析 89 5.2.2 改變再成長製程成長奈米碳管以及其場發射量測分析 89 5.2.3 場發射特性量測 91 第六章 參考文獻

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