本研究嘗試使用水做為溶劑，進行In2O3、Ga2O3、ZnO之前驅物製備，由於不同的元素組合對電性的影響皆不同，為了確保沉積物的元素組成是預期想要的，使用相同的前驅物濃度進行pH之調整，所得到的溶解度對pH做圖，供後期調整元素組成的製程視窗;沉澱的過程中若是元素不均勻沉澱，經鍛燒後會形成多種化合分相之結果，因為此三元素之氧化物彼此可於高溫形成化合物，並以比例之不同形成不同劑量系數比之化合物，因此為了確保在元素比例正確的情況下，不會有沉積不均勻的現象發生，嘗試使用不同的混合程序進行沉澱鍛燒，以XRD之分相結果做為調整混合程序的依據，發現以前驅鹽快速加入攪拌中之氨水，能得到較佳的分相結果，在1000℃1小時鍛燒下可得到ZnGa2O4最強繞射峰訊號僅為IGZO4最強繞射峰(101)晶面的4%。
鍛燒後之0.05g粉末加入5g 1000μm、5g 200μm、5g 50μm 之鋯球，使用Octylamine 400L作為分散劑，3.3ml chloroform以及0.66mL甲醇做為溶劑，放入星狀攪拌機進行物理研磨分散，可得到平均粒徑雙分佈為588nm、198nm之懸浮溶液，其固體濃度為13.51 mg/mL。
本實驗選擇p type矽基板，進行乾氧化製程，以濺鍍機沉積鈦金屬做為源極、汲極以及底層p type Silicon Gate之接觸電極，此製程所製備之基板，經電性量測其介電層崩潰強度達3.64 MV/cm ，可做為高品質薄膜電晶體主動層之量測使用。使用drop casting製程，於70℃進行塗佈製備之電晶體經500℃ 1小時Ar/H2(97%/3%)氫氣退火處理，可得到電流開關比1.3x101之元件。

In this study, In2O3, Ga2O3 and ZnO pre-cursors were prepared in H2O solution as a cost effective solution for TFT device fabrication. The element ratios of the precipitants were ensured and monitored by solubility and pH value comparison with known pre-cursors. The gathered results were charted and used as a reference for process optimization.
Also all three metal oxides could form undesired stoichiometry compounds if the metal elements were clustered during co-precipitation, different solution mixing method were studied to reduce the metal element clustering, and the result is verified by phase separation measured by XRD. Our study shown the powder obtained by adding metal precursor into ammonia solution and mixed at 850 rpm has the lowest degree of phase separation after 1 hour of calcine at 1000 C. The highest diffraction peak of ZnGa2O4 is measured, its intensity is only 4% compare to <101> crystal plane of IGZO4.
0.5g of obtain powder were mixed with 5g 1000μm、5g 200μm、5g 50μm grinding media, use 0.4mL Octylamine as a surfactant, and 3.3mL Chloroform and 0.66 methanol as solvent base. After 20 minutes of physical grinding, two separate set of powders were collected at 588nm 198nm. The solid concentration is 13.51mg/mL.
The TFT device use p type Si substrate, thermal oxide is used as insulating layer, titanium use to be source, drain and gate contact electrode which prepared by PVD sputter. The device fabricated use drop casting process at 70℃, after 500℃ 1Hr Ar/H2(97%/3%) annealing treatment, exhibit current on/off ratio 1.3x101.

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