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研究生： 柯呈翰
Ke, Cheng-Han
論文名稱： CMOS微機電電容式壓力感測器之開發
Development of CMOS MEMS Capacitive Pressure Sensors
指導教授： 盧向成
Lu, Shiang-Cheng
口試委員: 方維倫
Fang, Wei-Leun
傅建中
Fu, Chien-Chung
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 電子工程研究所
Institute of Electronics Engineering
論文出版年： 2019
畢業學年度： 107
語文別： 中文
論文頁數： 45
中文關鍵詞： 氣壓感測器 、電容式感測
外文關鍵詞： Pressure sensor, Capacitive sensing
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    • 本論文目的是探討表面薄膜受到內外壓力差距產生形變，並以電容的變化量來偵測氣壓的氣壓計。不同於以往的壓力感測器使用上下皆為金屬板的平板式電容感測器，利用下電極為指叉電極，薄膜沉積在上方約0.64m此間距為空氣間距，固定端與薄膜形成一個封閉的腔體，壓力差造成上方薄膜位移進而產生電容值的變化，感測電路將感測電容值的變化轉換成電壓的變化並輸出。此外，為了降低電路的寄生效應，使結果能夠更加精準，需將電路與結構整合在相同的晶片上。
    　　本論文採用TSMC 2P4M 0.35 m CMOS製程並利用氧化矽做為可形變的結構，並使用硫酸蝕刻將薄膜釋放，最後將蝕刻通道用銀膠封閉。晶片面積為2.8 mm × 2.6 mm。本研究設計四種不同大小的薄膜之壓力感測器，量測不同結構對壓力的感測度。電容式感測電容隨壓力之變化，並與模擬結果做比較。以一面積為100 μm×100 μm的感測元件為例，其量測感測度能達到45 V/Pa，感測壓力的範圍由10kPa到120kPa，其優勢在於感測薄膜內部少了金屬的材料能夠降低薄膜厚度，因此能夠產生更大的形變，電容的變化量也隨之增加，因此能夠有效提高感測度。

    The purpose of this thesis is to study pressure sensors in which the surface film is deformed by the pressure difference between cavity and outside, and ambient pressure is detected by variation of capacitance. Different from the conventional pressure sensors, set a flat-plate capacitive sensing component composed of two metal plates above and below, in my design, the electrode in lower plate is finger electrodes, thin film is deposited above electrode about 0.64m, also called as air gap, and the volume surrounding by plate, film and anchor is closed cavity. The displacement caused by pressure difference results in change of capacitance value, and sensing circuit senses capacitance variation and converts signal into voltage wave form. Additionally, to minimize effect of stray capacitance, structure and circuit have to be integrated on same wafer.

    In this paper, we choose TSMC 2P4M 0.35m CMOS process, use silicon oxide as deformable structure, the film is released by sulfuric acid etching, and inner channel caused by etching step is sealed with silver glue. The chips area is 2.8 mm×2.6 mm. In research, we design four different structure to measure sensitivity of different structure under various pressure and compare with simulation result. Taking a sensing element with an area of 100 μm × 100 μm as an example, the measurement sensitivity can reach 45 V/Pa, and the sensing pressure ranges from 10 kPa to 120 kPa. The advantage of sensing film without metal material is that can reduce film thickness. Therefore, the deformation of film can be larger. In other words, its displacement is more larger, so we can get higher sensitivity with larger capacitance variation.

    目錄 摘要 I Abstract II 圖目錄 V 表目錄 VIII 第1章 緒論 1 1-1前言 1 1-2文獻回顧 6 1-3研究動機 8 第2章 薄膜設計與分析 10 2-1薄膜位移介紹 10 2-2薄膜位移之理論 11 2-3薄膜位移之模擬 14 第3章 壓力感測器結構之設計與模擬 18 3-1感測器結構設計 18 3-2結構感測電容模擬 19 3-3結構後製程設計 21 3-4感測電路設計 24 第4章 量測與討論 27 4-1量測系統架構 27 4-2感測電路頻寬量測 28 4-3壓力感測度量測 30 4-4電容式壓力感測器量測 31 4-5電容式壓力感測器噪聲量測 34 第5章結論與未來 40 5-1研究成果與討論 40 5-2未來工作 40 第6章 參考文獻 42 圖目錄 圖 1 1 CMOS MEMS整合之微機電系統示意圖，左邊是CMOS電路系統，有多層金屬與氧化層，負責訊號處理，右邊為微機電系統，負責傳感物理量。 2 圖 1 2電容式壓力感測器。 3 圖 1 3壓阻式壓力感測器 (a)以壓阻為惠斯同電橋的四個電阻 (b)以A-A為切線的截面圖，薄膜的形變使壓阻值發生變化。(Barlian et al., 2009) 4 圖 2 1 薄膜受力後產生的形變使的間距縮小示意圖。 12 圖 2 2矩形薄膜結構幾何示意圖。 13 圖 2 3定義腔體與外部壓力值之示意圖 15 圖 2 4 100×100μm2薄膜位移對壓力變化做圖。 15 圖 2 5 150×150μm2薄膜位移對壓力變化做圖。 16 圖 2 6 200×200μm2薄膜位移對壓力變化做圖。 16 圖 2 7 200×200μm2薄膜位移對壓力變化做圖。 17 圖 3 1 邊長為100μm之結構參數設計。 18 圖 3 2 將100μm×100μm薄膜給予20kPa向下壓的力其位移結果進行分割每格為20μm×20μm。 19 圖 3 3 邊長100μm薄膜電容變化量對壓力做圖。 20 圖 3 4 TSMC 2P4M-0.35μm CMOS製程剖面圖 21 圖 3 5 未經過後製程加工之原始晶片側向圖 21 圖 3 6 經過硫酸與鋁蝕刻液蝕刻後晶片側向圖 22 圖 3 7 將銀膠點入後封閉腔體之完整晶片側向圖 23 圖 3 8 未點入銀膠前晶片完整釋放側向圖 23 圖 3 9 將Passivation完全去除後露出金屬部分 24 圖 3 10 感測電路架構。 24 圖 3 11 buffer電路圖。 25 圖 3 12 感測電路模擬結果。 26 圖 4 1 晶片量測系統架構示意圖。 27 圖 4 2 Measurement1感測電路之頻率響應。 28 圖 4 3 Measurement2感測電路之頻率響應。 29 圖 4 4 Measurement3感測電路之頻率響應。 29 圖 4 5 壓力控制與量測系統架構圖。 30 圖 4 6 壓力腔中的感測晶片與電路。 30 圖 4 7 氣壓以10kPa為間距從10kPa調降到120kPa時，晶片一邊長100μm薄膜電容值的變化。 31 圖 4 8 氣壓以10kPa為間距從10kPa調降到120kPa時，晶片二邊長100μm薄膜電容值的變化。 32 圖 4 9 氣壓以10kPa為間距從10kPa調降到120kPa時，晶片三邊長100μm薄膜電容值的變化。 32 圖 4 10 氣壓以10kPa為間距從10kPa調降到120kPa時，晶片一邊長100μm薄膜電壓值的變化。 33 圖 4 11 氣壓以10kPa為間距從10kPa調降到120kPa時，晶片二邊長100μm薄膜電壓值的變化。 33 圖 4 12 氣壓以10kPa為間距從10kPa調降到120kPa時，晶片三邊長100μm薄膜電壓值的變化。 34 圖 4 13 量測Measurement1晶片給予輸入端200mV頻率1MHz訊號量測輸出端結果 35 圖 4 14 量測Measurement2晶片給予輸入端200mV頻率1MHz訊號量測輸出端結果 36 圖 4 15 量測Measurement3晶片給予輸入端200mV頻率1MHz訊號量測輸出端結果 36 表目錄 表 3 1電壓緩衝器電晶體尺寸表。 25 表 4 1 Measurement1晶片感測度與噪聲分析結果 37 表 4 2 Measurement2晶片感測度與噪聲分析結果 38 表 4 3 Measurement3晶片感測度與噪聲分析結果 39

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