本論文將介紹以CMOS〈互補式金氧半導體〉製作出微夾子之設計及製程，光感測器將置於結構的正下方。它的製程特色是結合了金屬的濕蝕刻與犧牲層polysilicon 的乾蝕刻使得結構得到懸浮的狀態。而這微結構是用金屬與介電層所組合也包括了加熱器polysilicon做為電熱致動器。這電熱致動器需提供6 mW，單臂可以產生3.6um的平面位移量以及1.6um的向上位移量。相對的，加熱器溫度有220□C而結構的頂端溫度只上升了28□C。對於光感測器所量測出感光度和動態範圍分別是1.42 V/lux□sec和48.5 dB。我們量測到在有及沒有夾取到聚苯乙烯微珠時，在100 lux之下有0.06 V的電壓反應。
在這個研究裡，我們希望利用CMOS-MEMS的技術，製作一個嶄新結合致動器影像感測器的微結構，我們所希望製作的是能操縱抓取細胞分子、及提供即時影像感測的8 * 8陣列晶片，這樣的晶片目前在文獻中尚未出現。我們相信將微夾子陣列製作於CMOS上並利用光感測器晶片作影像感測在學術上也會是一個重要的貢獻！

This paper presents the design, fabrication, and characterization of CMOS (Complementary metal oxide semiconductor) micromachined grippers with on-chip photo detectors placed beneath the gripping sites. The fabrication features a combination of metal wet etch and sacrificial polysilicon etch for structural release. The fabricated microstructure contains metal and dielectric layers, plus a polysilicon heater for electrothermal actuation. For an applied power of 6 mW, one arm of the gripper produces a 3.6-□m in-plane displacement and a 1.6-□m out-of-plane displacement. The corresponding heater temperature is 220□C, and the temperature elevation at the tip is only 28□C. The measured sensitivity and dynamic range of the photo detector are 1.42 V/lux□sec and 48.5 dB, respectively. For measurements with and without grabbing a polystyrene bead, the difference of sensed voltages is 0.06 V at 100 lux.
In this project, we try to introduced a novel integrated CMOS-MEMS structure which can perform thermal actuation and optical detection. We believe that it will be a great contribution to make micro gripper array with optical detection in a conventional CMOS process.

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